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Optics Express

Two-photon interference with a semiconductor integrated source at room temperature

Xavier Caillet, Adeline Orieux, Aristide Lemaître, Pascal G. Filloux, Iván Favero, Giuseppe Leo, S. Ducci

Published Apr 28, 2010• 27 citations
Publisher

Abstract

We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on type II parametric down conversion with a counterpropagating phase-matching, pump photons generate photon pairs with an efficiency of about 10(-11) and a spectral linewidth of 0.3 nm for a 1 mm long sample. The indistiguishability of the photons of the pair is measured via a Hong-Ou-Mandel two-photon interference experiment showing a visibility of 85 %. This work opens a route towards new guided-wave semiconductor quantum devices.

DOI
10.1364/oe.18.009967

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We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on type II parametric down conversion with a counterpropagating phase-matching, pump photons generate photon pairs with an efficiency of about 10(-11) and a spectral linewidth of 0.3 nm for a 1 mm long sample. The indistiguishability of the photons of the pair is measured via a Hong-Ou-Mandel two-photon interference experiment showing a visibility of 85 %. This work opens a route towards new guided-wave semiconductor quantum devices.
We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on parametric down conversion with a counterpropagating phase-matching, pump photons generate photon pairs with an efficiency of about 10^(-11) and a spectral linewidth of 0.3 nm for a 1mm long sample. The indistiguishability of the photons of the pair are measured via a two-photon interference experiment showing a visibility of 85%. This work opens a route towards new guided-wave semiconductor quantum devices.
We demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on type II parametric down conversion in a counterpropagating phase matching scheme with transverse pump, the device generates around 10-11 pairs/pump photons having a 0.3 nm bandwidth for a 1 mm long waveguide. The emission spectrum shows the existence of two equally probable processes, which is a preliminary step to the direct generation of Bell states. The twin character of the photons of each pair is demonstrated via a temporal correlation measurement. These results open the way to the demonstration of several interesting features associated to the counterpropagating geometry, such as the control of the frequency correlation degree via the spatial and spectral properties of the pump beam.
In the last few years considerable effort has been devoted to the miniaturization of quantum information technology on semiconductor chips; in addition, recent developments in quantum information theory have roused a growing interest in 'generalized' states of frequency correlation. Parametric generation in semiconductor waveguides allows roomtemperature operation in the telecom range. We propose and compare some microcavity-based schemes for the generation of counterpropagating photon pairs and we experimentally demonstrate a bright source emitting 1.2 × 10-11pairs/pump photon for a 1.8 mm long waveguide. The indistiguishability of the photons of the pair is measured via a Hong-Ou-Mandel two-photon interference experiment showing a visibility of 85 %. The versatility of the source to control the generated two-photon state is also discussed.
We experimentally demonstrate an integrated semiconductor source of counterpropagating twin photons in the telecom range. A pump beam impinging on top of an AlGaAs waveguide generates parametrically two counterpropagating, orthogonally polarized signal/idler guided modes. A 2 mm long waveguide emits at room temperature one average photon pair per pump pulse, with a spectral linewidth of 0.15 nm. The twin character of the emitted photons is ascertained through a time-correlation measurement. This work opens a route towards new guided-wave semiconductor quantum devices.
In recent years, great efforts have been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four wave mixing in a Silicon waveguide have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 759 nm), impinging on the waveguide surface with an incidence angle θ generates two counterpropagating orthogonally polarized beams (around 1518 nm). The waveguide core is surrounded by distributed Bragg reectors to enhance the pump field within the device. We demonstrate the direct emission of polarization entangled photons by pumping the device at two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of F = 0:86 to a Bell state is obtained. These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.