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Journal of Physics Conference Series

Experimental characterization of NbN nanowire optical detectors with parallel stripline configuration

A. Casaburi, Mikkel Ejrnaes, Orlando Quaranta, Alessandro Gaggero, F. Mattioli, Roberto Leoni, B. Voronov, Gregory N Gol'tsman, Mikhail Lisitskiy, E. Esposito, Ciro Nappi, Roberto Cristiano, S. Pagano

Published Feb 1, 2008• 1 citation
Publisher

Abstract

We have developed a novel geometrical configuration for NbN-based superconducting single photon optical detector (SSPD) that achieves two goals: a much lower intrinsic impedance, and a consequently greater bandwidth, and a much larger signal amplitude compared to the standard meandered configuration. This has been obtained by implementing a properly designed parallel stripline structure where a cascade switching mechanism occurs when one of the striplines is hit by an optical photon. The overall switching occurs synchronously and in a very short time, giving rise to a strong and fast voltage pulse. The SSPD have been realized using state of the art NbN deposition technology and e-beam lithography. The strips are 100 nm wide and 5 μm long and have been realized with 4 nm NbN film on sapphire and Si substrate. We report on experimental characterization of such novel devices. The performances of the proposed novel type of SSPD are compared with standard SSPD design and results in terms of signal amplitude, risetime and effective detection area.

DOI
10.1088/1742-6596/97/1/012265

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We have developed a novel geometrical configuration for NbN-based superconducting single photon optical detector (SSPD) that achieves two goals: a much lower intrinsic impedance, and a consequently greater bandwidth, and a much larger signal amplitude compared to the standard meandered configuration. This has been obtained by implementing a properly designed parallel stripline structure where a cascade switching mechanism occurs when one of the striplines is hit by an optical photon. The overall switching occurs synchronously and in a very short time, giving rise to a strong and fast voltage pulse. The SSPD have been realized using state of the art NbN deposition technology and e-beam lithography. The strips are 100 nm wide and 5 μm long and have been realized with 4 nm NbN film on sapphire and Si substrate. We report on experimental characterization of such novel devices. The performances of the proposed novel type of SSPD are compared with standard SSPD design and results in terms of signal amplitude, risetime and effective detection area.
Ultrathin NbN nanowires is the material of choice for superconducting single photon detectors (SSPD) due to the good efficiency, dark count rate and timing jitter at 1550 nm wavelength obtained. These performance parameters are achieved using nanowires a few nanometers thick and 100 nm wide patterned into a meander shape in order to achieve area coverage. The meander shape effectively makes the SSPD of a single very long nanowire in turn giving it a significant inductance which limits the maximum count rate of the detector. Recently, we demonstrated how one can exploit a cascade switch to the normal state of nanowires connected in parallel to significantly reduce the SSPD inductance and increase the signal amplitude. Here we present how one can configure SSPDs that uses multiple cascade switches to the normal state. We show how this principle can be used to expand the SSPD coverage area with a very limited increase in detector inductance with area. Finally we discuss our first results obtained with SSPD based on the multiple cascade switch principle, showing correct operation, increased operational bias range and increased signal pulse amplitudes.
Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response.
Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs.
The authors present superconducting single photon detectors (SSPDs) based on parallel nanostrips with an area up to 40 × 40 μm2. The SSPDs presented here are based on 100 nm wide ultrathin NbN nanostrips with a filling factor of 40%. The devices are fabricated by extending the standard electron beam lithography (EBL) patterning process to those densely structured large areas. By a thorough characterization it is shown that the electrical properties of the parallel SSPDs are comparable with those of smaller devices, as expected, proving in this way that the extended EBL process results in uniform nanostrips also in large area detectors. Furthermore, the estimated maximum count rate of the 40 × 40 μm2 parallel SSPDs was 33 MHz, showing that the parallel nanostrip configuration is much faster when compared with standard meandered serial SSPDs. The successful extension of parallel SSPDs to a large area coverage opens a new route to the use of such detectors also with multimode fibers.
Ultrathin NbN nanowires is the material of choice for superconducting single photon detectors (SSPD) due to the good efficiency, dark count rate and timing jitter at 1550 nm wavelength obtained. These performance parameters are achieved using nanowires a few nanometers thick and 100 nm wide patterned into a meander shape in order to achieve area coverage. The meander shape effectively makes the SSPD of a single very long nanowire in turn giving it a significant inductance which limits the maximum count rate of the detector. Recently, we demonstrated how one can exploit a cascade switch to the normal state of nanowires connected in parallel to significantly reduce the SSPD inductance and increase the signal amplitude. Here we present how one can configure SSPDs that uses multiple cascade switches to the normal state. We show how this principle can be used to expand the SSPD coverage area with a very limited increase in detector inductance with area. Finally we discuss our first results obtained with SSPD based on the multiple cascade switch principle, showing correct operation.
Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.