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Journal of Physics C Solid State Physics

Non-linear refraction in magnetised III-V semiconductors

Pratima Sen

Published May 10, 1983• 7 citations
Publisher

Abstract

Using the coherent radiation-exciton interaction model, the phenomenon of non-linear refraction has been investigated analytically in the important III-V semiconductors duly irradiated by laser beams with photon energies in the vicinity of the crystal band edges in the presence of a large steady magnetic field. Phenomenological introduction of a damping constant is shown to explain the saturation mechanism. The results can be compared with those obtainable from the direct saturation model.

DOI
10.1088/0022-3719/16/13/023

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International Journal of Nanoscience•Aug 1, 2011•1 citation
Using the coherent radiation-exciton interaction model, the phenomenon of non-linear refraction has been investigated analytically in the important III-V semiconductors duly irradiated by laser beams with photon energies in the vicinity of the crystal band edges in the presence of a large steady magnetic field. Phenomenological introduction of a damping constant is shown to explain the saturation mechanism. The results can be compared with those obtainable from the direct saturation model.
Abstract A coherent radiation‐exciton interaction model is employed to study analytically the phenomenon of nonlinear absorption in important III—V semiconductors (viz., GaAs, GaSb, InSb, InAs), the crystals being irradiated by suitable lasers with energies (hω) nearly equal to the band gap energies (hωg). The nonoptical processesare accounted for phenomenologically by introducing a damping parameter into the equation of motion of the probability amplitude of the excited electron—hole pair state. The Wannier‐Mott type of exciton wave function is found to be responsible for the giant nonlinearity of the crystal absorption coefficient in the near resonant optical interband transition regime with h | ω ‐ ωg | of the order of the crystal exciton binding energy. The effect of renormalization of the crystal band gap in the presence of Coulomb interaction and Starkbroadening is also discussed.
Detailed comparisons are made of the results of two approaches to the problem of non-linear refraction at frequencies just below the band edge of a semiconductor. The magnetic field case discussed is shown to give potentially larger non-linearities than the zero-field situation. The physical origin of the non-linear dispersion is taken to be direct saturation of T 2 broadened band states in the first model. In the second the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large non-linearity, of importance in the field of dispersive optical bistability. The results are also consistent with experimental observations of non-linear Faraday rotation and interband saturation in InSb.
Using a coherent radiation-semiconductor interaction model based upon the time dependent perturbation technique, the occurrence of optical nutation has been analytically investigated in direct-gap semiconductors such as GaAs, GaSb, InAs, and Hg1-xCdxTe, duly irradiated by near resonant laser beams. The present approach is much more simplified and straightforward than the conventional Maxwell-Bloch approach used so far for the study of coherent optical transient effects in molecular and atomic systems. The dispersion and absorption expressed in terms of the real and imaginary parts of the crystal optical susceptibility\chi_{r}and\chi_{i}exhibit temporally damped ringing behavior of Neumann and Bessel types, respectively. These processes have been identified as dispersive and absorptive optical nutation. The theory is developed for arbitrary laser intensity in presence of damping due to nonoptical processes. To understand the mechanisms of dispersive and absorptive optical nutation, we have restricted only to low-power resonant band-to-band transitions neglecting excitonic and damping effects. While studying analytically the transient behavior of\chi_{r}and\chi_{i}for a given pump field strength, it is noticed that the absorptive component exhibit remarkable qualitative agreement with the experimental observations of optical nutation in13CH3F.
Abstract Detailed comparisons are made of the results of two approaches to the problem of nonlinear refraction at frequencies just below the band edge in semiconductors. The physical origin o f the nonlinear dispersion is taken to be direct saturation of independent, T2-broadened band states in the first model discussed. In the second model the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large nonlinearity, X(3) ≈ 1 e. s. u., of importance in the field of dispersive optical bistability and consistent with experimental observations of bistability, two-beam differential gain and four-wave mixing.
Based upon the time-dependent perturbation treatment of coherent radiation-semiconductor resonant interaction, the effect of an externally applied magnetic field on pulse propagation in bulk III-V semiconductors has been investigated analytically. Numerical estimations are made for a sample of InSb crystal duly irradiated by ultrafast infrared dye laser operating in the 3.9–9.4 μm wavelength range. The transmitted intensity profiles manifest the occurrence of pulse chirping and spectral broadening of the input pulse while propagating through the semiconducting crystal under the nonlinear dispersion regime. Although the mechanisms are different, similar characteristics were observed experimentally in atomic rubidium vapour in the presence of a strong magnetic field.
Transient optical nonlinearities of semiconductor quantum dots in the strongly confined regime are studied, in which the exciton, biexciton and magnetic field effects are taken into account. The photo induced band-to-band electronic transitions are considered from both the heavy-hole (hh) and light-hole (lh) valence bands to the lowest (1s) exciton state below the fundamental absorption edge. The time dependent perturbation technique for a three-level system, under the near band gap resonant excitation regime, has been employed; with the incorporation of the relaxation and dephasing mechanisms phenomenologically. The induced polarization is calculated from where the real and imaginary parts of the third-order nonlinear optical susceptibility, responsible for the occurrence of nonlinear refraction and nonlinear absorption respectively, have been derived. The temporal and detuning spectra of nonlinear refraction and absorption; and their dependence on density of biexcitons and a moderately strong magnetic field, have been analyzed. It is observed that the nonlinear refraction and nonlinear absorption enhance with increasing magnetic field in small CdS quantum dots.