Nitrogen-vacancy (NV) centers in diamond are a promising candidate as a solid state qubit memory for quantum information as they possess very long coherence times even at room temperature. Furthermore, NV centers are very sensitive to their electromagnetic environment and are addressable in the GHz frequency range. Here we review our progress towards the detection of single NV centers for the implementation of fast on demand coupling between NV centers and GHz electromagnetic fields. Precisely, we present efforts towards mapping NV centers with a cathodoluminescence setup. Developing such capability is important for patterning local one-qubit gates for the application of high amplitude electromagnetic fields as a tuning parameter.
Nitrogen-vacancy (NV) centers in diamond are a promising candidate as a solid state qubit memory for quantum information as they possess very long coherence times even at room temperature. Furthermore, NV centers are very sensitive to their electromagnetic environment and are addressable in the GHz frequency range. Here we review our progress towards the detection of single NV centers for the implementation of fast on demand coupling between NV centers and GHz electromagnetic fields. Precisely, we present efforts towards mapping NV centers with a cathodoluminescence setup. Developing such capability is important for patterning local one-qubit gates for the application of high amplitude electromagnetic fields as a tuning parameter.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
Point defects in diamond, particularly nitrogen-vacancy (NV) centers, have emerged as powerful tools for a broad range of quantum technologies. These defects are promising candidates for quantum information science, serving as deterministic single-photon sources and solid-state quantum memories. They have also been employed as nanoscale quantum sensors to detect various physical quantities, including magnetic fields, electric fields, and temperature, owing to their long spin coherence time at room temperature. Development of these diamond-based quantum technologies has been rapidly boosted by a recent quantum leap in nanofabrication technologies for high-quality single-crystal diamond. Incorporating these color centers into diamond nanostructures with mature integrated photonics provides a promising route to build scalable and practical systems for quantum applications. This review discusses recent progress and challenges in the hybrid integration of diamond color centers on cutting-edge photonic platforms. Nitrogen-vacancy centers in diamond have emerged as powerful tools for a broad range of quantum technologies. This review discusses recent progress and challenges in the hybrid integration of diamond color centers on cutting-edge photonic platforms.
The nitrogen vacancy (NV) center in diamond is a unique quantum system that combines solid state spin qubits with coherent optical transitions. The spin states of the NV center can be initialized, read out, and controlled with RF fields at room temperature. It can be coupled to other spin systems in the environment while at the same time maintaining an extraordinary degree of quantum coherence. Experiments utilizing the NV center's spin states have led to a wide range of demonstrations from quantum error correction to high-sensitivity magnetometry. This thesis, however, focuses on creating an interface between NV centers and light in the visible domain by making use of its optical transitions. Such an interface connects the quantum system consisting of NV centers and nuclear spins to photons, which can then be used to both manipulate the spin qubits themselves or transport quantum information over large distances.
Nitrogen-vacancy (NV) centers in diamond have recently emerged as a unique platform for fundamental studies in quantum information and nanoscience. The special properties of these impurity centers allow robust, room-temperature operation of solid-state qubits and have enabled several remarkable demonstrations in quantum information processing and precision nanoscale sensing. This article reviews the recent advances in magnetic and optical manipulation of the NV center’s quantum spin and their importance for prospective applications. We discuss how quantum control of individual centers can be harnessed for the protection of NV-center spin coherence, for multiqubit quantum operations in the presence of decoherence, and for high-fidelity initialization and readout. We also discuss the progress in resonant optical control, which has led to interfaces between spin and photonic qubits and may lead to spin networks based on diamond photonics. Many of these recently developed diamond-based technologies constitute critical components for the future leap toward practical multiqubit devices.
For quantum information applications, nitrogen-vacancy (NV) centers in diamond combine many of the advantages of atomic systems (optical access, millisecond spin-coherence times) with the engineering flexibility of solid-state devices. Recent demonstrations of coherent coupling between photons and individual NV-center spins [1,2] provide a route to integrating NV-center qubits within photonic networks and for on-demand generation of entangled single-spin/single-photon pairs. Such applications require the ability to tune the NV-center zero-phonon optical transitions, to compensate for natural sample inhomogeneities which perturb the electronic orbital states. Here we demonstrate the ability to electrically control the orbitals of individual NV centers by applying voltages to micron-scale surface gates [3]. Surprisingly, the local electric field experienced by an NV center is significantly enhanced by a photoinduced space charge resulting from photoionization of deep donor impurities within the diamond, even in high-purity single-crystal material (< 5 ppb nitrogen content). Since the photoinduced electric fields are reproducible as a function of gate voltage and are predominantly directed perpendicular to the diamond surface, we can harness them to obtain three-dimensional control of the local electric field vector with surface gates alone. To demonstrate this technique, we tune the excited-state orbital doublet of a strained NV center to degeneracy, as required for some spin-photon entanglement protocols [2], and then adjust the optical transition frequency, showing that we can tune multiple NV centers to have the same degenerate transition energy. This method should enable the coherent coupling of multiple NV center spins to indistinguishable photons within a scalable photonic network.
Abstract On the demand of single‐photon entangled light sources and high‐sensitivity probes in the fields of quantum information processing, weak magnetic field detection and biosensing, the nitrogen vacancy (NV) color center is very attractive and has been deeply and intensively studied, due to its convenience of spin initialization, operation, and optical readout combined with long coherence time in the ambient environment. Although the application prospect is promising, there are still some problems to be solved before fully exerting its characteristic performance, including enhancement of emission of NV centers in certain charge state (NV− or NV0), obtaining indistinguishable photons, and improving of collecting efficiency for the photons. Herein, the research progress in these issues is reviewed and commented on to help researchers grasp the current trends. In addition, the development of emerging color centers, such as germanium vacancy defects, and rare‐earth dopants, with great potential for various applications, are also briefly surveyed.