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Russian Microelectronics

NV-centers in diamond. Part I. General information, fabrication technology, and the structure of the spectrum

Alexander V. Tsukanov

Published Mar 1, 2012• 18 citations
Publisher

Abstract

A quantum system, which is one of the most popular and promising in experimental quantum informatics, namely, the NV-center in diamond, is considered. We draw the reader’s attention to the results obtained for the past several years, which envelope a wide circle of questions associated with the fabrication, control, and measurement of NV-centers; and with their use as elementary carriers of quantum information. The problem of the construction of a full-scale quantum computer is discussed.

DOI
10.1134/s1063739712020084

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A quantum system, which is one of the most popular and promising in experimental quantum informatics, namely, the NV-center in diamond, is considered. We draw the reader’s attention to the results obtained for the past several years, which envelope a wide circle of questions associated with the fabrication, control, and measurement of NV-centers; and with their use as elementary carriers of quantum information. The problem of the construction of a full-scale quantum computer is discussed.
Nitrogen-vacancy (NV) color centers in diamond have emerged as a focal point in quantum technology research due to their exceptional optical and electronic spin properties. This discovery not only expands our understanding of the material properties of diamond but also paves the way for practical applications in quantum technology. As a solid-state spin quantum system characterized by long electron spin coherence times and stable performance, NV color centers offer distinct advantages in quantum information processing. Recent advancements have enabled the fabrication of high-quality NV color centers with controllable concentration and spatial positioning through techniques such as in situ doping, ion implantation, and hybrid approaches. These technological breakthroughs have significantly enhanced the efficiency of NV center fabrication, thereby establishing a robust foundation for their widespread application in quantum sensing and quantum information technologies. This review provides a compre­hensive introduction to the structure and fundamental properties of NV color centers in diamond, an in-depth analysis of recent progress in their fabrication techniques, and a critical discussion of their current applications in quantum science and technology. Additionally, the challenges, open questions, and future research directions in NV color center studies are addressed.
In recent years, NV centers in diamond has attracted significant attention as a candidate for quantum information devices. The negatively charged NV center, in particular, has been intensely investigated [1-3]. NV- centers host both an electron spin qubit and a nitrogen nuclear spin, in our case a nuclear spin-1/2 of 15N is imbedded. The ground state of the electron spin qubit has a long coherence time and an optical transition at 637nm. The nuclear spins may be considered as a long-lived quantum memory, which has been experimentally demonstrated [2]. Because of these preferable quantum properties, NV centers have been considered as a good candidate for implementation of quantum information processing and there has been a number of theoretically propose designs for quantum information processing [3].
Artificial atoms like the nitrogen vacancy (NV) centers in diamond enable the realization of fully functional qubits in a solid at room temperature. The functionalities of all the parts needed to create a quantum computer, such as quantum error correction, couplings, quantum teleportation, and a quantum repeater, have already been experimentally demonstrated. These achievements are expected to influence the industrial development of quantum information technology as well as quantum sensing. Whereas quantum sensing has been established and a large number of organizations are working on new developments in this area, a quantum computer itself remains elusive due to technical reasons and limitations of the available materials. For example, only in recent months has it become possible to electrically readout the NV spin state at the level of a single center and significantly improve the scalability of NV center production. A number of ideas have been proposed to overcome the above-mentioned limitations. This paper summarizes the status of research in the area, details the most promising concepts for development, and discusses factors limiting progress as well as the most recent developments in the field.