Studies of spin-polarized hydrogen and deuterium at temperatures below 1 K using E.S.R.
I. Shinkoda
In this thesis we describe the results of two sets of experiments on spin-polarized atomic hydrogen at temperatures below 1 K using a 115 GHz heterodyne ESR spectrometer. First, we have made measurements of the rates of the two-body recombination processes in spin-polarized atomic hydrogen gas and spin-polarized atomic deuterium gas in a 41 kG field. In the second set of experiments, we examined the ESR absorption line associated with the spin-polarized atomic hydrogen atoms adsorbed on surfaces of liquid helium. In hydrogen, a comparision of the measured recombination rates in 41 kG with the corresponding rates measured in different magnetic fields showed that an additional recombination process is activate for the conditions of these experiments. We demonstrate that this is due to a resonant recombination process via the (v,J) = (14,4) level of molecular hydrogen. In spin-polarized deuterium, we found that the recombination rate are much larger than the analogous rates in hydrogen, and therefore that atomic deuterium gas is much less stable than the hydrogen system under comparable conditions. We report the first observation and study of doubly spin-polarized deuterium, a gas in which both the deuteron and electron spins are aligned. At temperatures near 0.1 K, the absorption line of doubly spin-polarized H atoms changes drastically as a peak appears on both sides of the peak associated with the bulk atoms. We have shown that these new peaks are due to the atoms which are adsorbed onto the surface of the liquid helium film that coats the walls of the microwave cavity. The geometry dependent non-zero average magnetic dipolar field due to aligned spins on a planar surface results in a shift of the position of the ESR absorption lines. The lineshapes of the side peaks are very unusual and are best described as ramp-like. Even after extensive attempts to explain this lineshape, we still do not know what mechanism is responsible.
•Jan 1, 2011•0 citations