The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$ ${\mathrm{Se}}_{\mathit{x}}$ and ${\mathrm{Al}}_{\mathit{x}}$ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$ ${\mathrm{Se}}_{\mathit{x}}$ while the dephasing time in ${\mathrm{Al}}_{\mathit{x}}$ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As amounts to only a few picoseconds. In ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$ ${\mathrm{Se}}_{\mathit{x}}$ dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$ ${\mathrm{Se}}_{\mathit{x}}$ . In contrast, in ${\mathrm{Al}}_{\mathit{x}}$ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$ ${\mathrm{Se}}_{\mathit{x}}$ and ${\mathrm{Al}}_{\mathit{x}}$ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Se}}_{\mathit{x}}$ and ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Se}}_{\mathit{x}}$ while the dephasing time in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As amounts to only a few picoseconds. In ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Se}}_{\mathit{x}}$ dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Se}}_{\mathit{x}}$. In contrast, in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Se}}_{\mathit{x}}$ and ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.

Physical review. B, Condensed matterAug 15, 199266 citations

Study on Optical Dephasing of Localized Exciton in a-Si 1-xCx: H With Incoherent Light

D.J. Zhou, G. Qiu, C.H. Fu +2 more

In recent years, optical dephasing in disordered semiconductors and related alloys has been the interesting subject of nonlinear optics.

Nonlinear OpticsJan 1, 19920 citations

The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$

{\mathrm{Se}}_{\mathit{x}}

and

{\mathrm{Al}}_{\mathit{x}}

${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$

{\mathrm{Se}}_{\mathit{x}}

while the dephasing time in

{\mathrm{Al}}_{\mathit{x}}

${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As amounts to only a few picoseconds. In ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$

{\mathrm{Se}}_{\mathit{x}}

dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$

{\mathrm{Se}}_{\mathit{x}}

. In contrast, in

{\mathrm{Al}}_{\mathit{x}}

${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$

{\mathrm{Se}}_{\mathit{x}}

and

{\mathrm{Al}}_{\mathit{x}}

${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.