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Chemical Physics Letters

Determination of quantum efficiency of persistent spectral hole burning using dispersive kinetics

Alexey V. Turukhin, A.A. Gorokhovsky

Published Jan 1, 2000• 11 citations
Publisher
DOI
10.1016/s0009-2614(99)01371-8

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Persistent spectral hole burning (PSHB) in the ${}^{7}{F}_{0}{\ensuremath{-}}^{5}{D}_{0}$ transition and the electron excitation in the ${}^{7}{F}_{0}\ensuremath{-}4f5d$ transition of ${\mathrm{Sm}}^{2+}$ doped in ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses were studied from the measurements of hole burning efficiency and the refilling of the burnt hole. The PSHB at low temperature is attributed to the optically activated rearrangement of OH bonds surrounding ${\mathrm{Sm}}^{2+}$ ions. On the other hand, the PSHB at high temperature is attributed to one-step electron tunneling in the excitation state. The barrier heights for hole filling corresponding to the two mechanisms were determined to be \ensuremath{\sim}0.27 and \ensuremath{\sim}0.90 eV, respectively. Thermal depth of the trap that captures electrons by two-step ionization via the $4f5d$ state was determined to be \ensuremath{\sim}0.35 eV below the conduction band. A model was proposed for describing the PSHB and electron excitation of ${\mathrm{Sm}}^{2+}$ doped in ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses. In addition, the dependence of hole burning efficiency on the ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ concentration, temperature, and burning wavelength was also studied.

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Basic Principles and Methods of Persistent Spectral Hole-Burning

Karl K. Rebane, L. A. Rebane

Topics in current physics•Jan 1, 1988•20 citations
The dynamics of laser hole burning in a three-dimensional system of fixed isotropically oriented oscillators is simulated. The kinetic curves obtained are analyzed using methods of solving the inverse problem. The contribution of orientational effects to the total dispersion is studied and a quantitative characteristic of this contribution in the form of the standard deviation is obtained. The influence of the broadening of impurity centers on the dispersion of the burning kinetics of persistent and dynamical holes is studied. It is shown how some experimental instrumental factors can distort the results of the analysis of kinetic curves. On the basis of spectral and fluorescence experimental kinetic data, a method for determining the rate constants of the hole burning is proposed.
Persistent spectral hole burning (PSHB) in the ${}^{7}{F}_{0}{\ensuremath{-}}^{5}{D}_{0}$ transition and the electron excitation in the ${}^{7}{F}_{0}\ensuremath{-}4f5d$ transition of Sm2+{\mathrm{Sm}}^{2+}Sm2+ doped in ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses were studied from the measurements of hole burning efficiency and the refilling of the burnt hole. The PSHB at low temperature is attributed to the optically activated rearrangement of OH bonds surrounding Sm2+{\mathrm{Sm}}^{2+}Sm2+ ions. On the other hand, the PSHB at high temperature is attributed to one-step electron tunneling in the excitation state. The barrier heights for hole filling corresponding to the two mechanisms were determined to be \ensuremath{\sim}0.27 and \ensuremath{\sim}0.90 eV, respectively. Thermal depth of the trap that captures electrons by two-step ionization via the 4f5d4f5d4f5d state was determined to be \ensuremath{\sim}0.35 eV below the conduction band. A model was proposed for describing the PSHB and electron excitation of Sm2+{\mathrm{Sm}}^{2+}Sm2+ doped in ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses. In addition, the dependence of hole burning efficiency on the Al2O3{\mathrm{Al}}_{2}{\mathrm{O}}_{3}Al2​O3​ concentration, temperature, and burning wavelength was also studied.