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Physical Review A

Raman-Nath theory of degenerate four-wave mixing in semiconductors

David J. Richardson, Ewan M. Wright, Stephan W. Koch

Published Feb 1, 1990• 4 citations
Publisher

Abstract

A theory of degenerate four-wave mixing in the Raman-Nath approximation is developed that includes transverse effects and excitation-dependent optical material properties. A microscopic model is used for the nonlinear absorption and refractive-index changes of laser-excited semiconductors. Diffusion of the excitation density is assumed to be the dominant transverse coupling mechanism. Numerical simulations of the Raman-Nath scattering spectrum are presented for the example of room-temperature bulk GaAs using steady-state illumination. The shortcomings of the standard analysis at high excitation are demonstrated.

DOI
10.1103/physreva.41.1620

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