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AIP conference proceedings

Pulsed Four-Wave Mixing in Intersubband Transitions of a Semiconductor Quantum Well: Effects of Pulse Shape

Sofia Evangelou, Emmanuel Paspalakis, Nikolaos A. Vainos, Stelios Couris, Emmanuel Paspalakis, Ioannis B. Koutselas, Stavros Pissadakis

Published Jan 1, 2010• 0 citations
Publisher

Abstract

We study theoretically the phenomenon of pulsed four‐wave mixing in intersubband transitions of a symmetric semiconductor quantum well structure. In the theoretical model we consider two quantum well subbands that are coupled by a strong pulsed pump electromagnetic field and a weak pulsed probe electromagnetic field. For the description of the system dynamics we use the density matrix equations obtained from the effective nonlinear Bloch equations. We calculate the time‐integrated four‐wave mixing spectrum for various pulse shapes and electron sheet densities and study the effects of pulse shape on four‐wave mixing.

DOI
10.1063/1.3521347

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We study theoretically the phenomenon of pulsed four‐wave mixing in intersubband transitions of a symmetric semiconductor quantum well structure. In the theoretical model we consider two quantum well subbands that are coupled by a strong pulsed pump electromagnetic field and a weak pulsed probe electromagnetic field. For the description of the system dynamics we use the density matrix equations obtained from the effective nonlinear Bloch equations. We calculate the time‐integrated four‐wave mixing spectrum for various pulse shapes and electron sheet densities and study the effects of pulse shape on four‐wave mixing.
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We study theoretically the time evolution of nonlinear optical phenomena of a probe electromagnetic field pulse in intersubband transitions of a semiconductor quantum well structure under the influence of a pump electromagnetic field. More specifically, we take into consideration the effects of electron-electron interactions and consider the interaction of a two-subband system with rectangular electromagnetic fields. The spectral form of the linear absorption, dispersion, and nonlinear optical Kerr effect is described, from the time that the external field is applied up until the dynamics of the system has reached a steady state. In order to describe the dynamics of the system, the effective nonlinear Bloch equations are used, in which renormalized terms for the transition energy and the applied field have been added, due to the effects of electron-electron interactions. These equations are properly combined, and the differential equations of the density matrix elements for the several optical phenomena up to third order are derived. These are solved numerically in the whole time range up to the steady state for a GaAs/AlGaAs quantum well structure. We show that the form of the several optical spectra studied here has a significantly altered evolution over time, according to the value of the frequency of the pump field and of electron sheet density. Even in the case in which the spectral form in the steady state case is almost identical for two different sets of parameters, their evolution can be quite different, according to the precise value of these parameters.
We study coherent ultrashort pulse propagation in a two-subband system in a symmetric semiconductor quantum well structure, performing calculations beyond the rotating wave approximation and the slowly varying envelope approximation and taking into account the effects of electron-electron interactions. The interaction of the quantum well structure with the electromagnetic fields is studied with modified, nonlinear, Bloch equations. These equations are combined with the full-wave Maxwell equations for the study of pulse propagation. We present results for the pulse propagation and the population inversion dynamics in the quantum well structure for different electron sheet densities.
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We study the interaction of a chirped electromagnetic pulse with intersubband transitions of a double semiconductor quantum well. We specifically consider the interaction of the ground and first excited subbands with the electromagnetic field and use the nonlinear density matrix equations for the description of the system dynamics. These equations are solved numerically for various values of the electron sheet density for a realistic double GaAs/AlGaAs quantum well, and the efficiency of population transfer is discussed with emphasis given to the effects of the detuning of the central frequency of the electromagnetic field from resonance.
: We study the creation of high-efficiency controlled population transfer in intersubband transitions of semiconductor quantum wells. We give emphasis to the case of interaction of the semiconductor quantum well with electromagnetic pulses with a duration of few cycles and even a single cycle. We numerically solve the effective nonlinear Bloch equations for a specific double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse areas. The dependence of the efficiency of population transfer on the electron sheet density and the carrier envelope phase of the pulse is also explored. For electromagnetic pulses with a duration of several cycles, we find that the change in the electron sheet density leads to a very different response of the population in the two subbands to pulse area. However, for pulses with a duration equal to or shorter than 3 cycles, we show that efficient population transfer between the two subbands is possible, independent of the value of electron sheet density, if the pulse area is Π.