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Japanese Journal of Applied Physics

Josephson Junctions with Extremely LargeIcRnProducts and Their High Frequency Response

Toshiaki Takano, Tatsuji Kato, Hideo Ogawa, Toshihiro Omodaka, Yoshikazu Hayashi

Published Oct 1, 1980• 2 citations
Publisher

Abstract

Josephson junctions with extremely large values of the products of their critical currents and normal resistances exceeding the theoretical maximum values for tunnel junctions are constructed. The high-frequency properties of these junctions are investigated using a 114 GHz microwave. The resistively-shunted junction model is used to account for the microwave response of these junctions.

DOI
10.1143/jjap.19.1999

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Josephson-Effect Mixers using Shunted Nb and NbN Tunnel Junctions

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We present test results of a 100 GHz waveguide receiver using resistively-shunted Nb and NbN tunnel junctions. These junctions were fabricated with a process similar to that used previously with Nb junctions [1], which produces non-hysteretic devices with normal-state resistances of 30-50 Ohms, and IcRiz products of 0.5-0.75 mV. The best receiver temperature obtained to date with NbN is 270 K (DSB) with 6-7 dB of conversion loss. A receiver temperature of 390 K (DSB) was previously obtained with Nb junctions; these devices showed qualitative agreement with the predictions of the simple DC and RF current-biased RSJ model. The improvement in receiver performance is probably due to improved RF coupling of the junctions, and due to the higher IcRn products of NbN. However, these NbN devices display different pumped I-V curves and IF power curves than predicted by the RSJ model. 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Josephson Junctions: Oscillators and Broadband Spectrometers at Frequencies up to 1 THz

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Physical review. B, Condensed matter•Apr 1, 1985•22 citations
Josephson junctions with extremely large values of the products of their critical currents and normal resistances exceeding the theoretical maximum values for tunnel junctions are constructed. The high-frequency properties of these junctions are investigated using a 114 GHz microwave. The resistively-shunted junction model is used to account for the microwave response of these junctions.
The electrophysics and microwave properties of Niobium oxide-barrier tunnel junctions with critical current densities up to 105A/cm2were studied. Millimeter wave mixing using strong nonlinearity of quasi-particle tunnelling curve is described. Nonhysteretic Josephson junctions obtained by the low inductance resistive shunting of the tunnel structures were investigated in the large frequency band. The frequency range where these junctions obey the resistively shunted junction model was determined. The shunted tunnel junctions have been shown to be suitable for various applications which require stable enough Josephson junctions with nonhysteretic I-V curve (IVC).
We present test results of a 100 GHz waveguide receiver using resistively-shunted Nb and NbN tunnel junctions. These junctions were fabricated with a process similar to that used previously with Nb junctions [1], which produces non-hysteretic devices with normal-state resistances of 30-50 Ohms, and IcRiz products of 0.5-0.75 mV. The best receiver temperature obtained to date with NbN is 270 K (DSB) with 6-7 dB of conversion loss. A receiver temperature of 390 K (DSB) was previously obtained with Nb junctions; these devices showed qualitative agreement with the predictions of the simple DC and RF current-biased RSJ model. The improvement in receiver performance is probably due to improved RF coupling of the junctions, and due to the higher IcRn products of NbN. However, these NbN devices display different pumped I-V curves and IF power curves than predicted by the RSJ model. We show that these effects can be caused by the strong interaction of the junction with the embedding circuit, and conclude that an accurate model of the impedance presented to the junction will have to be included in the RSJ simulations to compare with the observed performance. Fourth International Symposium on Space Terahertz Technology Page 443 Introduction We are studying the performance of Josephson-effect mixers using resistivelyshunted tunnel junctions in order to develop a better understanding of their behavior, the sources of noise and its limitation, and to determine how to optimize their performance. Also, we wish to compare the observed behavior and performance with the theoretical predictions of the so-called RSJ (resistively shunted junction) model, so that there will be a guide to the expected performance for different frequency regimes and device parameters. This work may be important as high-Tc SNS devices become available [P.A. Rosenthal and E.N. Grossman, these proceedings] with large Ic h?„ products, for they provide the possibility of using Josephson mixers at frequencies in the terahertz range, above the range where SIS mixers are currently available. In contrast, due to the extremely short coherence lengths of the high-Tc materials, junctions suitable for quasiparticle (SIS) mixers may not be feasible with these materials Device Fabrication We have applied the technique used for creating non-hysteretic Nb Josephson devices[1] to NbN/MgO/NbN tunnel junctions. First the junction tfilayer is fabricated, then the junction areas are patterned by electron-beam lithography and subsequently etched using reactive-ion etching (RJE) in the standard method [3]. After planarization of the etched area with evaporated SiO, a AuGe resistor is fabricated on top of the SiO, and the junction and resistor are then contacted with another layer of NbN. A photomicrograph of a completed Nb junction is shown in Figure la. Since the bottom of the etched trilayer lies under the resistor, it acts as a ground plane, and the resistor structure can be analyzed as a lossy transmission line. The impedance of this short microstrip structure is purely real, even up to frequencies comparable to the gap frequency of the superconductor, thus providing the desired broadband shunt. However, the section of Page 444 Fourth International Symposium on Space Terahertz Technology superconductor which contacts the junction and resistor creates a non-negligible parasitic capacitance when compared to the very small area tunnel junctions used, and therefore the area of this contact pad must be kept to a minimum. From a knowledge of the geometry and thickness of the insulator (Si0), we estimate this parasitic capacitance to be 7-8 fF. Shunting of the junction is necessary to reduce the McCumber beta parameter (Pc = 2eIcRN C Ih) of the unshunted tunnel junctions. Junctions with /3, values greater than one have hysteretic I-V curves [4], and their dynamics can be complicated, including the possibility of chaos. Reduction of 13, is accomplished by resistive shunting, which reduces /3 by the square of the ratio of the initial junction resistance to the final resistance of the parallel combination of the junction and the resistive shunt. However, this shunting has the undesirable effect of reducing the 1,Rn product of the junction. For the NbN junctions used, the critical current density was about 331cA/cm 2 , and the specific capacitance is estimated to be about 150/F 1 itm [5], giving an unshunted of about 12. Thus the optimal shunted junction for these parameters would have a shunt resistance of about one-fourth of R,„ and thus an IcR7, reduced from the unshunted value of 3.0 mV to 0.8 mV. In order to maintain high enough resistances for the final device, very small (0.3pm on a side) area junctions must be used, and the parasitic capacitance will be comparable to the junction capacitance. This further reduces the final IeR, product attainable. The I-V curve of a typical device is shown in Figure lb. This device had a critical current of 11 microamps and a normal state resistance of 39 Ohms, giving an IcR, product of 430 microvolts. The IV curve is nonhysteretic and follows the RSJ model. Mixer Modelling Mixer performance can be predicted using the RSJ model, in a method similar to that used by Taur[6], but extended to the case of finite junction capacitance. The
This thesis is devoted to some selected applications of the Josephson junction oscillator. The initial work was performed using low-Tc Nb/PbBi tunnel junctions, while the later parts were done using the recently developed high-Tc YBa2Cu3O7 (YBCO) Josephson junctions. The latter junctions have raised the hope for Josephson oscillator applications with substantially increased operation frequencies and temperatures. In the first part of this thesis the use of inductor-resistor (LR) shunted tunnel junctions in arrays of phase locked Josephson junction oscillators was investigated. The LR shunt is designed to resonate out the intrinsic tunnel junction capacitance at the operation frequency. We show that LR shunted tunnel junctions have important advantages compared to the commonly used resistively shunted tunnel junctions; i.e. narrower linewidths, higher impedance of the junctions and that they can be optimized also at frequencies higher than about 100 GHz. Design rules for stable, non-chaotic oscillations with optimized output power were developed. Measurements on a non- optimized circuit show that oscillator arrays of LR shunted tunnel junctions can generate substantial power, ~10 nW to a 300 .OMEGA. load at 390 GHz from a 10 junction array. In the second part the phase locking of YBCO Josephson junctions was clearly demonstrated for the first time. Mutual phase locking of two junctions was observed at frequencies between 0.2 and 1 THz, and was only limited by the bandwidth of the coupling circuit. The locking was in good agreement with simulations based on the resistively shunted junction model. The interaction of a single Josephson junction with a 5 junction oscillator array was also measured at frequencies up to about 350 GHz, but was substantially reduced by the high losses of the coupling circuit. The YBCO Josephson junctions were found to be interesting candidates for microwave generation at frequencies approaching 1 THz and oscillator arrays to be mainly limited by the high losses of the coupling circuits at these frequencies. In the third part the interaction of YBCO Josephson junctions with integrated resonators were studied for the first time. Using a novel method, Josephson Broadband Spectroscopy (JOBS), the high frequency properties of the resonators were measured with a bandwidth of up to 1 THz and in the temperature range 4-77 K. The YBCO surface resistance (9 m.OMEGA. at 4 K and 100 GHz) was found to scale as f2 and had a temperature dependence in good agreement with the two-fluid model, modified with 18% non-pairing charge carriers. The YBCO London penetration depth was frequency independent (460 nm at 4 K) and had a temperature dependence in agreement with the two-fluid model.
Unexpected partly dramatic temperature dependences were registered for the basic tunnel parameters used to characterize a Josephson junction. Measurements of the magnetic field variation of the microwave-power reflection, i.e., a mapping of the Josephson plasma resonance, enabled determinations of the rf small-voltage resistance RJ, the cosφ amplitude ζ, and the effective junction capacitance C in both Pb-O-Pb and PbTl-O-Pb junctions. The uncertainties in the parameter values are large, particularly in the low temperature values of ζ, for which we confirm earlier estimates of ζ, but as the superconducting transition temperature Tc is approached, ζ increases rapidly and goes through a positive maximum close to +1 before it decreases towards zero at Tc. Also, RJ displays a pronounced maximum in the same temperature interval; it decreases rapidly within a narrow range below the temperature of the maximum before it again increases slowly well below Tc. The location in temperature for the two maxima depends upon the barrier via the critical current density, but seems to be material independent. Well below Tc, the ratios of RJ to the normal-state tunnel resistance are also affected by the barrier transmission. These latter properties seem hard to explain within a model based only on the relaxation of the order parameters in the superconductors. A considerable decrease in C close to Tc can be explained by temperature-dependent surface losses in the junction electrodes. The Q-value associated with these could be determined as a function of temperature. In accordance with previous measurements, the Josephson current IJ is reduced at low temperature in small high-resistance tunnel junctions. Smaller deviations in IJ from theoretical estimates can be explained by strong coupling effects.
Experimental I-V curves of microwave-driven Josephson tunnel junctions with resistive shunts are reported. The results are in very good agreement with numerical calculations using the resistively shunted junction model. In the low-frequency regime there are three distinct regions in the I-V curves and two different types of Shapiro steps. It is demonstrated that the overall shape of the I-V curves can be explained by using an adiabatic interpretation of the junction response. The two different types of Shapiro steps are related to a compensation effect between dc and rf bias currents.