Physical Review A
Resonant enhancement of dielectronic recombination by a high-frequency microwave field
E. S. Shuman, Thomas F. Gallagher
Abstract
Dielectronic recombination via the Ba $6{p}_{3∕2}n\ensuremath{\ell}$ states from a continuum of finite bandwidth is resonantly enhanced by a 38.8-GHz microwave field at the energies for which the $\ensuremath{\Delta}n=1,\phantom{\rule{0.2em}{0ex}}2,\phantom{\rule{0.2em}{0ex}}\dots{},\phantom{\rule{0.2em}{0ex}}k$ transitions of the intermediate $6{p}_{1∕2}n\ensuremath{\ell}$ states are resonant with the microwave frequency. The mechanism is resonant Stark mixing of high and low $\ensuremath{\ell}$ states by the microwave field. While static field enhancement of dielectronic recombination occurs at fields scaling as ${n}^{\ensuremath{-}5}$, the field required for enhancement of the $\ensuremath{\Delta}n=k,\phantom{\rule{0.2em}{0ex}}k\ensuremath{\geqslant}2$ resonances is roughly $n$ independent.