Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Russian Physics Journal

Effect of lightwave intensity fluctuations on the dynamics of nonresonance optical bistability near exciton resonance

Iurii Gudyma

Published Dec 1, 1998• 0 citations
Publisher
DOI
10.1007/bf02514567

Related papers

Valley-Selective Exciton Bistability in a Suspended Monolayer Semiconductor

Hongchao Xie, Shengwei Jiang, Jie Shan +1 more

We demonstrate robust optical bistability, the phenomenon of two well-discriminated stable states depending upon the history of the optical input, in fully suspended monolayers of WSe 2 at low temperatures near the exciton resonance. Optical bistability has been achieved under continuous-wave optical excitation that is red-detuned from the exciton resonance at an intensity level of 10 3 W/cm 2 . The observed bistability is originated from a photothermal mechanism, which provides both optical nonlinearity and passive feedback, two essential elements for optical bistability. The low thermal conductance of suspended samples is primarily responsible for the low excitation intensities required for optical bistability. Under a finite out-of-plane magnetic field, the exciton bistability becomes helicity dependent due to the exciton valley Zeeman effect, which enables repeatable switching of the sample reflectance by light polarization. Our study has opened up exciting opportunities in controlling light with light, including its wavelength, power, and polarization, using monolayer semiconductors.

arXiv:1803.04067•Nano Letters•Apr 16, 2018•15 citations

Optical bistability in a system of coherent excitons

P. I. Khadzhi, G. K. Shibarshina, A. Kh. Rotaru

•Oct 1, 1987•0 citations

Physics of Excitonic Optical Bistability

Eiichi Hanamura

International Conference on Solid State Devices and Materials (SSDM)•Aug 31, 1983•0 citations

Strong Light-Semiconductor Interactions in CdS, GaSe and Optical Bistability

В.С. Днепровский, A. I. Furtichev, V. Klimov +4 more

Changes in absorption and refractive index caused by the absorption of laser light in CdS and GaSe ("dynamic” nonlinearities which may lead to optical bistability /OB/) were investigated. Nonlinear effects may be very strong ("giant" nonlinearities) due to the resonant enhancement near the sharp band edge in the case of resonant excitation of excitons or interband transition.

Topical Meeting on Optical Bistability (OB)•Jan 1, 1988•0 citations

Room-temperature excitonic optical bistability in bulk GaAs

Jack L. Jewell, Seth Ovadia, Nasser N. Peyghambarian +4 more

Optical bistable devices containing GaAs/AlGaAs multiple quantum well (MQW) structures have shown great potential for performing fast low-power optical switching at room temperature.1 The presence of a much stronger exciton absorption feature in the MQW structures compared to bulk GaAs suggests far superior performance in the former. We report the observation of room-temperature bistability in bulk GaAs with input power <10 mW and intensities of a few kW/cm2. The intensities are consistent with the data of Miller et al.2 which show a saturation intensity of nearly 4 kW/cm2 in a MQW sample with a detuning of less than a halfwidth from the peak of the exciton resonance. Our detunings are always several halfwidths.

Conference on Lasers and Electro-Optics•Jan 1, 1984•1 citation

Simulations of the dynamics of optical bistability with fluctuations

Hartmut Schmidt, S. W. Koch, H. Hang

The European Physical Journal B•Mar 1, 1983•12 citations
We demonstrate robust optical bistability, the phenomenon of two well-discriminated stable states depending upon the history of the optical input, in fully suspended monolayers of WSe 2 at low temperatures near the exciton resonance. Optical bistability has been achieved under continuous-wave optical excitation that is red-detuned from the exciton resonance at an intensity level of 10 3 W/cm 2 . The observed bistability is originated from a photothermal mechanism, which provides both optical nonlinearity and passive feedback, two essential elements for optical bistability. The low thermal conductance of suspended samples is primarily responsible for the low excitation intensities required for optical bistability. Under a finite out-of-plane magnetic field, the exciton bistability becomes helicity dependent due to the exciton valley Zeeman effect, which enables repeatable switching of the sample reflectance by light polarization. Our study has opened up exciting opportunities in controlling light with light, including its wavelength, power, and polarization, using monolayer semiconductors.
Optical bistable devices containing GaAs/AlGaAs multiple quantum well (MQW) structures have shown great potential for performing fast low-power optical switching at room temperature.1 The presence of a much stronger exciton absorption feature in the MQW structures compared to bulk GaAs suggests far superior performance in the former. We report the observation of room-temperature bistability in bulk GaAs with input power <10 mW and intensities of a few kW/cm2. The intensities are consistent with the data of Miller et al.2 which show a saturation intensity of nearly 4 kW/cm2 in a MQW sample with a detuning of less than a halfwidth from the peak of the exciton resonance. Our detunings are always several halfwidths.