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Optics Express

THz-bandwidth tunable slow light in semiconductor optical amplifiers

Forrest G. Sedgwick, Bala Pesala, Jui-Yen Lin, Wai Son Ko, Xiaoxue Zhao, Connie J. Chang-Hasnain

Published Jan 22, 2007• 38 citations
Publisher

Abstract

We report tunable fractional delays of 250% for 700 fs pulses propagating in a 1.55 mum semiconductor optical amplifier at room temperature. This large fractional delay is attributed to a spectral hole created by the propagating pulses for pulses with duration shorter than the carrier heating relaxation time. Delay can be tuned electrically by adjusting the current with low amplitude variation across the tuning range.

DOI
10.1364/oe.15.000747

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Optics Express•Jan 1, 2006•35 citations
We report tunable fractional delays of 250% for 700 fs pulses propagating in a 1.55 mum semiconductor optical amplifier at room temperature. This large fractional delay is attributed to a spectral hole created by the propagating pulses for pulses with duration shorter than the carrier heating relaxation time. Delay can be tuned electrically by adjusting the current with low amplitude variation across the tuning range.
Slow and fast light enables key functionality in various rf applications and all-optical networks. Semiconductor-based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Furthermore, they operate at room temperature and can be easily integrated into various optical systems. Ultrafast nonlinear processes in semiconductor optical amplifiers (SOAs) have been used to achieve tunable slow and fast light in the terahertz bandwidth. For a 700 fs pulse, we show an electrically and optically controllable advance of 1.9 ps corresponding to an advance-bandwidth product (ABP) of 2.5. Furthermore, by leveraging self-phase modulation in these devices, we extend the performance to an ABP of 3.7. We develop comprehensive theory using a density matrix approach to explain the experimental results. Our results show that an ultrashort pulse propagating through the SOA experiences nonlinear index change due to spectral-hole burning and wave mixing between different spectral components. We derive analytical expressions for the nonlinear index induced by these ultrafast processes and numerically solve the propagation of an ultrashort pulse through the SOA. Our theoretical predictions agree very well with our experimental results. Finally, we show fast light for two ultrashort pulses separated by 7.2 ps, which demonstrates the feasibility of this scheme at high bit rates.
Abstract : Slow and fast light schemes are attractive for many applications including optical signal processing and RF phased array antennas. Semiconductor based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Further they operate at room temperature and can be easily integrated into various optical systems. In this program, we used ultrafast nonlinearities in semiconductor optical amplifiers (SOAs) to achieve tunable time shifts at THz frequencies. In particular, we leveraged the spectral hole burning phenomena and demonstrated fast light in quantum well (QW) and quantum dot (QD) SOAs. The research included both theoretical and experimental efforts. Theoretical work was developed to understand and simulate experimental results and to optimize device designs. We introduced a novel pulse compression technique to reduce the pulse width to 100 fs to efficiently use ultra-fast nonlinearities in SOAs to achieve a large and cascadable delay. We implemented a novel chirped pulse scheme and obtained the largest advance-pulse-product of 10.7 with THz bandwidth. We demonstrated slow and fast light with GHz RF signal in QW/QD SOAs using coherent population oscillation and four-wave mixing. We also demonstrated cascaded SOAs in a loop to scale up the delay/advance.
We propose and experimentally demonstrate a scheme to generate optically controlled delays based on off-resonant Raman absorption. Dispersion in a transparency window between two neighboring, optically activated Raman absorption lines is used to reduce the group velocity of broadband 765 nm pulses. We implement this approach in a potassium titanyl phosphate (KTP) waveguide at room temperature, and demonstrate Raman-induced delays of up to 140 fs for a 650-fs duration, 1.8-THz bandwidth, pulse. Our approach should be applicable to single-photon signals, offers wavelength tunability, and is a step toward processing ultrafast photons.
Tunable delays in semiconductor optical amplifiers are achieved via four wave mixing between a strong pump beam and a modulated probe beam. The delay of the probe beam can be controlled both electrically, by changing the SOA bias, and optically, by varying the pump power or the pump-probe detuning. For sinusoidal modulated signal at 0.5 GHz, a tunable delay of 1.6 ns is achieved. This corresponds to a RF phase change of 1.6 pi. For 1.3 ns optical pulses propagating through the SOA a delay of 0.59 ns is achieved corresponding to a delay-bandwidth product exceeding 0.45. For both the cases, slow light and superluminal light are observed as the pump-probe detuning is varied.