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Journal of Computational Electronics

Simulation of Electron Decoherence Induced by Carrier-Carrier Scattering

Andrea Bertoni

Published Dec 1, 2003• 16 citations
Publisher
DOI
10.1023/b:jcel.0000011440.86454.13

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We show how two qubits encoded in the orbital states of two quantum dots can be entangled or disentangled in a controlled way through their interaction with a weak electron current. The transmission/reflection spectrum of each scattered electron, acting as an entanglement mediator between the dots, shows a signature of the dot–dot entangled state. Strikingly, while a few scattered carriers produce decoherence of the whole two-dot system, a larger number of electrons injected from one lead with proper energy are able to recover its quantum coherence. Our numerical simulations are based on a real-space solution of the three-particle Schrödinger equation with open boundaries. The computed transmission amplitudes are inserted in the analytical expression for the system density matrix to evaluate the entanglement.
Real-time time-dependent density functional theory provides a first-principles description of coherent electron dynamics in laser-driven solids, but its unitary formulation cannot capture the irreversible scattering, relaxation, and decoherence processes that drive excited carriers toward equilibrium. Here, we develop a dissipative rt-TDDFT framework in which first-principles electron-phonon interactions enter the evolution of the reduced one-body density matrix through self-energy-derived collision integrals within the Born-Markov approximation. The approach retains the quantum-coherent real-time propagation of the electronic system while introducing phonon-mediated transitions that redistribute carriers in energy and crystal momentum, thereby incorporating the microscopic momentum-transfer processes responsible for relaxation in real materials. The resulting framework provides a practical first-principles route to simulate relaxation, decoherence, and time-resolved spectroscopic signatures in realistic crystalline materials.
This paper examines the phonon-induced electron decoherence in semiconductor nanostructures and nanodevices within the Wigner transport equation, solved using a particle Monte Carlo technique. The Wigner-Boltzmann formalism is first established as a relevant and original approach to modeling electron quantum decoherence in semiconductors. The simulation of the time evolution of a free wave-packet then allows analyzing the competition between decoherence and wave-packet expansion in a semiconductor. It is additionally argued that decoherence occurs faster than in the widely studied case of quantum Brownian motion. The simulation of a wave packet interacting with a tunnel barrier allows studying the electron localization induced by decoherence. The case of a wave packet interacting with a double barrier puts forward the mechanism of decoherence-induced transition from resonant to sequential transport through a bound state. Finally the simulation of resonant tunneling devices shows how these phenomena take place in nanodevices and highlights the transition from the quantum transport regime to the semiclassical transport regime induced by phonon scattering.