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Japanese Journal of Applied Physics

Effect of the Shunt Capacitance on the ac Josephson Effect in Nb Point Contacts

Takashi Noguchi, K. Ohsawa, Seizo Morita, Nobuo Mikoshiba

Published Aug 1, 1980• 3 citations
Publisher

Abstract

The ac Josephson effects in Nb point contacts were measured using optically pumped sub-millimeter-wave laser. Laser-induced constant voltage steps (Shapiro steps) were observed on the dc I–V curves of the hysteretic junction as well as non-hysteretic junctions. We found that the height of the fundamental step normalized to the critical current at no irradiation in hysteretic junctions was considerably larger than that previously reported. The enhancement of the step observed can be explained by taking the effect of the shunt capacitance into consideration.

DOI
10.1143/jjap.19.l469

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The ac Josephson effects in Nb point contacts were measured using optically pumped sub-millimeter-wave laser. Laser-induced constant voltage steps (Shapiro steps) were observed on the dc I–V curves of the hysteretic junction as well as non-hysteretic junctions. We found that the height of the fundamental step normalized to the critical current at no irradiation in hysteretic junctions was considerably larger than that previously reported. The enhancement of the step observed can be explained by taking the effect of the shunt capacitance into consideration.
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It has been found that point-contact Josephson junctions can be clearly classified into bridge-type and tunnel-type by introducing new parameters characterizing their I-V curves. Nearly-ideal tunnel-type junctions with Nb–SuO x –Sn (Film) point-contacts were obtained. Tunnel-type junctions showed larger gap energies than bridge-type junctions in Nb–SnO x –Sn and Nb–NbO x –NbN point-contacts. The submillimeter-wave responses were measured in Nb–Nb point-contacts, and it was found that the contacts with the best performance were bridge-type junctions with a sharp gap structure; tunnel-type junctions showed rather bad performance. On irradiation with laser light, the center of the Shapiro step moved to the lower-current side in bridge-type junctions but to the higher-current side in tunnel-type junctions. These differences can be explained by differences in the heating effects between bridge-type and tunnel-type junctions.
We have studied the far infrared behavior of high -T/sub c/ superconductor-normal metal-superconductor (SNS) microbridges with T/sub c/>85 K and critical current-resistance products (I/sub c/R/sub N/) as high as 10 mV at 4 K. These are the highest I/sub c/R/sub N/ products reported to date for microfabricated Josephson junctions of any material. The junctions were integrated at the feeds of planar log-periodic antennas made from Au thin films. The junctions had dc normal state resistances R/sub N/ between 6 and 38 /spl Omega/, reasonably well matched to the antenna's estimated RF impedance of 53 /spl Omega/. Far infrared laser radiation at 404, 760, and 992 GHz induced distinct Shapiro steps (i.e. constant voltage steps at voltages n(hf/2e), n=1,2,...) in the current voltage characteristics as well as modulation of the critical current. Steps were observed at voltages up to 17 mV and 6 mV, at temperatures of 9 K and 57 K respectively. This corresponds to maximum Josephson oscillation frequencies of 8 and 3 THz at these temperatures. These are the first far infrared measurements performed on high T/sub c/ junctions. Measurements of the power, frequency, and temperature dependence of the Shapiro steps are presented and discussed in the context of a resistively and capacitively shunted junction (RCSJ) model. A value of 4.5 fF for the junction capacitance is inferred from the hysteresis of the slightly underdamped current-voltage characteristics.>
We have studied the far infrared behavior of high -T/sub c/ superconductor-normal metal-superconductor (SNS) microbridges with T/sub c/>85 K and critical current-resistance products (I/sub c/R/sub N/) as high as 10 mV at 4 K. These are the highest I/sub c/R/sub N/ products reported to date for microfabricated Josephson junctions of any material. The junctions were integrated at the feeds of planar log-periodic antennas made from Au thin films. The junctions had dc normal state resistances R/sub N/ between 6 and 38 /spl Omega/, reasonably well matched to the antenna's estimated RF impedance of 53 /spl Omega/. Far infrared laser radiation at 404, 760, and 992 GHz induced distinct Shapiro steps (i.e. constant voltage steps at voltages n(hf/2e), n=1,2,...) in the current voltage characteristics as well as modulation of the critical current. Steps were observed at voltages up to 17 mV and 6 mV, at temperatures of 9 K and 57 K respectively. This corresponds to maximum Josephson oscillation frequencies of 8 and 3 THz at these temperatures. These are the first far infrared measurements performed on high T/sub c/ junctions. Measurements of the power, frequency, and temperature dependence of the Shapiro steps are presented and discussed in the context of a resistively and capacitively shunted junction (RCSJ) model. A value of 4.5 fF for the junction capacitance is inferred from the hysteresis of the slightly underdamped current-voltage characteristics. >
The high-frequency behavior of niobium cat-whisker point contacts is studied using radiation from an optically pumped far-infrared (FIR) laser. The FIR molecular laser had a dielectric-waveguide cavity and was pumped by a CO2 laser. The use of capacitive-mesh output couplers is extended throughout the FIR spectrum, between 42 micrometers and 1.2 mm, and have found the optimum grid constants for several lines. At shorter wavelengths, the laser performance was improved by the use of a novel hybrid capacitive-mesh hole output coupler. The coupling of the FIR radiation to the point contact is found to depend in a simple manner on the resistance of the contact. The FIR laser radiation induces constant-voltage steps on the dc I-V curves of our junctions, allowing us to study the high-frequency ac Josephson effect.