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Optics Letters

Room-temperature persistent spectral hole burning of Eu^3+ in sodium aluminosilicate glasses

Koji Fujita, Katsuhisa Tanaka, Kazuyuki Hirao, Naohiro Soga

Published Apr 1, 1998• 59 citations
Publisher

Abstract

Persistent spectral hole burning has been observed at 77 K, 180 K, and room temperature for Eu(3+) in sodium aluminosilicate glass melted under a reducing atmosphere. In particular, room-temperature persistent spectral hole burning is reported for the first time to our knowledge in Eu(3+) -doped materials. The persistent hole is accompanied by no antiholes and lasts for 1 h at least. The thermal stability of the hole is greater than that of a persistent hole burned for Eu(3+) in sodium aluminosilicate glass melted in air.

DOI
10.1364/ol.23.000543

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We reported the first observation of room-temperature persistent spectral hole burning in Sm2+-doped fluoride glass in the last conference [1]. Room-temperature hole burning had been also observed in Sm2+-doped crystals [2]. We found considerable differences in the hole-burning characteristics between Sm2+-doped glasses and Sm2+-doped crystals: The burning-laser-intensity dependence is approximately linear, and no antihole is observed around the hole burned in Sm2+-doped glasses [3]. More detailed experimental studies are needed to clarify the mechanism of the hole burning in this glass and to explore more efficient hole-burning systems. In this paper, we report several experimental results related to wavelength dependence of the hole burning process.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1994•0 citations
Persistent spectral hole burning has been observed at 77 K, 180 K, and room temperature for Eu(3+) in sodium aluminosilicate glass melted under a reducing atmosphere. In particular, room-temperature persistent spectral hole burning is reported for the first time to our knowledge in Eu(3+) -doped materials. The persistent hole is accompanied by no antiholes and lasts for 1 h at least. The thermal stability of the hole is greater than that of a persistent hole burned for Eu(3+) in sodium aluminosilicate glass melted in air.
Persistent spectral hole burning (PSHB) and light-induced absorption spectra with the pump of burning light were measured and studied in the Sm2+-doped xAl2O3⋅(100−x)SiO2 glasses to reveal the electron transfer and the formation of PSHB at room temperature. It was observed that the density of Sm2+ at the burnt sites decreased, while that of Sm3+ increased after the burning. The hole depth increased with the increase of Al2O3 concentration. The formation of PSHB is attributed to a one-step electron transfer by tunneling through the excited state, D05. The traps that capture the electrons produced by the ionization of Sm2+ may be related to the oxygen vacancies. In addition, the thermal activated barrier height between the burnt and unburnt configuration was estimated as ∼1.0 eV by thermal hole filling.
Persistent spectral hole burning is observed in Sm(2+)-doped glasses at room temperature. The holes are burned in the (7)F(0) ? (5)D(0), (5)D(1) lines of the Sm(2+) ions in three kinds of fluoride glass. The dependence of the burning efficiency on the sample and on the burning intensity is measured. The intensity dependence is approximately linear, and no antihole is observed around the burned hole. The hole-burning mechanism is discussed. The temperature dependence of the homogeneous width is also measured.
We reported the first observation of room-temperature persistent spectral hole burning in Sm2+-doped fluoride glass in the last conference [1]. Room-temperature hole burning had been also observed in Sm2+-doped crystals [2]. We found considerable differences in the hole-burning characteristics between Sm2+-doped glasses and Sm2+-doped crystals: The burning-laser-intensity dependence is approximately linear, and no antihole is observed around the hole burned in Sm2+-doped glasses [3]. More detailed experimental studies are needed to clarify the mechanism of the hole burning in this glass and to explore more efficient hole-burning systems. In this paper, we report several experimental results related to wavelength dependence of the hole burning process.