Ultrafast all-optical polarization QDs switch room temperature properties

Zheng Chen, Tao Wang

Mengting He, Yujing Cao, Junjie Lin +3 more

The quest for the room-temperature optical transistor based on nonlinearities in single atoms or molecules is attracting a lot of attention. In this work, a single-photon emitter in cubic silicon carbide is verified that can operate as an optical switch at room temperature under pulsed green laser illumination with a near-infrared pulsed laser as the control gate. We demonstrated an ultrafast and reversible optical modulation with a high photoluminescence intensity suppression ratio up to 97.9% and a response time as short as 287.9±5.7 ps . The current development provides insights for high-precision and ultrafast optical switches, with possibilities for integration with emerging electronic installations to realize more intelligent photoelectric integrated devices.

Darius Urbonas, Anton V. Zasedatelev, Anton V. Baranikov +9 more

We realize an all-optical transistor using exciton-polariton condensation, enabling nonlinearities down to single-photon level at room temperature. Sub-picosecond switching and amplification near the fundamental quantum limit are pivotal steps for energy efficient, ultrafast all-optical logic.

Englund, Andrei Faraon, Ilya Fushman +1 more

Paola Borri, W. Langbein, Stephan Schneider +4 more

We present an extensive experimental study of the exciton relaxation and dephasing in InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are embedded in the active region of an electrically pumped semiconductor optical amplifier. Ultrafast four-wave mixing and differential transmission spectroscopy on the dot ground-state transition are performed with a sensitive heterodyne detection technique. The importance of the population relaxation dynamics to the dephasing is determined as a function of injection current and temperature. Above 150 K dephasing processes much faster than the population relaxation are present, due to both carrier-phonon scattering and Coulomb interaction with the injected carriers. Only at low temperatures (<30 K) does population relaxation of multiexcitons in the gain regime fully determine the dephasing.

Thomas Volz, Andreas Reinhard, Martin Winger +4 more