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Journal of the Optical Society of America B

Dependence on temperature of two-wave mixing in InP:Fe at three different wavelengths: an extended two-defect model

Cafer Özkul, S. Jamet, Valérie Dupray

Published Nov 1, 1997• 14 citations
Publisher

Abstract

A comparative study of the temperature dependence of the two-wave mixing gain is performed at three wavelengths (i.e., 1.06, 1.32, and 1.54 µm) for the fringe spacing values Λ=1.6 µm and 5 µm. With the latter the gain sign changes at low temperature for λ=1.06 and λ=1.54 µm, but not for λ=1.32 µm. The gain measurements are performed both with and without an external electric field. The theoretical model must fit all the experiments. In our case the energy level of the second defect is found to be near the valence band. We demonstrate that the agreement between the theory and the experiments performed at room temperature is improved by incorporating the indirect transitions (involving the excited state of iron) into the two-defect model. The result of this approach is presented as the extended two-defect model.

DOI
10.1364/josab.14.002895

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Photorefractive effect in InP:Fe dominated by holes at room temperature: influence of the indirect transitions

Cafer Özkul, S. Jamet, Philippe Gravey +2 more

Iron-ion concentrations have been determined from measurements of the photoinduced-grating erasure times. We checked the accuracy of this method by performing two-wave mixing experiments at λ = 1.32 μm without an applied field. After verifying the fit of the extended single-defect model with indirect transitions and the two-wave mixing gain data at λ = 1.06 μm, we conclude that the indirect transitions involving the excited state of Fe2+ can induce a reduction of the photorefractive effect in InP:Fe when the dominant photocarriers are holes at room temperature.

Journal of the Optical Society of America B•Sep 1, 1994•4 citations

Net gain in photorefractive InP:Fe at λ=1.32 μm without an applied field

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We have observed two-beam coupling gain (0.273 cm−1) that exceeds absorption (0.145 cm−1) in InP:Fe without applying an external field at λ=1.32 μm. Measurements of the gain coefficient as a function of grating spacing fit the photorefractive theory for simultaneous electron-hole transport, with the effective density of traps NE = (3.86 ± 1.1)NE=(3.86±1.1)× 1015 cm−3 and ξ, the factor that accounts for competition between electrons and holes, equaling −0.729±0.026. Absorption measurements, combined with the photoionization cross sections of electrons and holes, confirm these results. The agreement between theory and experiment suggests how to choose impurity concentrations that optimize net gain.

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Thermally induced hole-electron competition in photorefractive InP:Fe due to the Fe2+ excited state

Philippe Delaye, P. U. Halter, Gérald Roosen

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Philippe Delaye, P. U. Halter, Gérald Roosen

We show that even if there is no direct hole–electron competition in InP:Fe the gain is lower than expected. We attribute this reduction of the gain to a thermally induced hole–electron competition that involves the excited state of Fe2+ (5T2). We present a new model for the photorefractive effect in InP:Fe, which we use to interpret our beam-coupling results. Some material parameters of the InP:Fe sample and particularly of the excited state are deduced. The same energy-transfer measurements conducted in GaAs give us the ratio of hole and electron photoionization cross sections.

Journal of the Optical Society of America B•Dec 1, 1990•32 citations

Effet photoréfractif dans l'InP:Fe : étude comparative en fonction de la température à plusieurs longueurs d'onde

S. Jamet

Cette etude porte sur l'effet photorefractif dans le phosphure d'indium dope au fer (InP:Fe). Les gains optiques mesures en absence de champ electrique applique et a la longueur d'onde de 1,06 micrometre sont plus faibles que les valeurs calculees avec un modele qui tient compte d'un seul niveau d'energie (celui du fer) dans la bande interdite. Nous contribuons a determiner l'origine de cette reduction qui est attribuee dans la litterature, soit aux transitions indirectes liees a l'etat excite du fer soit a d'autres niveaux superficiels. Dans un premier temps, nous mettons en evidence la necessite d'effectuer des mesures en fonction de la temperature et a plusieurs longueurs d'onde (1,06 ; 1,32 et 1,535 micrometre) afin d'etablir les roles respectifs des differents niveaux d'energie dans les echantillons etudies ou l'effet photorefractif est domine par les trous a temperature ambiante. L'etude de la constante de temps d'effacement du reseau a permis de determiner les concentrations en ions Fe2+ et Fe3+. Nous comparons ensuite les courbes du gain mesure pour les trois longueurs d'onde en fonction de la temperature et du pas avec les simulations effectuees a partir des differents modeles comprenant soit le niveau excite du Fe2+*, soit un second niveau place pres de la bande de conduction puis, pres de la bande de valence. Dans les echantillons etudies, ces differentes comparaisons ont montre qu'a basse temperature l'effet photorefractif est influence par un second niveau situe pres de la bande de valence alors qu'a temperature ambiante il faut a la fois tenir compte du second defaut et de l'etat excite du fer

•Jan 1, 1995•0 citations
A comparative study of the temperature dependence of the two-wave mixing gain is performed at three wavelengths (i.e., 1.06, 1.32, and 1.54 µm) for the fringe spacing values Λ=1.6 µm and 5 µm. With the latter the gain sign changes at low temperature for λ=1.06 and λ=1.54 µm, but not for λ=1.32 µm. The gain measurements are performed both with and without an external electric field. The theoretical model must fit all the experiments. In our case the energy level of the second defect is found to be near the valence band. We demonstrate that the agreement between the theory and the experiments performed at room temperature is improved by incorporating the indirect transitions (involving the excited state of iron) into the two-defect model. The result of this approach is presented as the extended two-defect model.
Iron-ion concentrations have been determined from measurements of the photoinduced-grating erasure times. We checked the accuracy of this method by performing two-wave mixing experiments at λ = 1.32 μm without an applied field. After verifying the fit of the extended single-defect model with indirect transitions and the two-wave mixing gain data at λ = 1.06 μm, we conclude that the indirect transitions involving the excited state of Fe2+ can induce a reduction of the photorefractive effect in InP:Fe when the dominant photocarriers are holes at room temperature.
We have observed two-beam coupling gain (0.273 cm−1) that exceeds absorption (0.145 cm−1) in InP:Fe without applying an external field at λ=1.32 μm. Measurements of the gain coefficient as a function of grating spacing fit the photorefractive theory for simultaneous electron-hole transport, with the effective density of traps NE = (3.86 ± 1.1)NE=(3.86±1.1)× 1015 cm−3 and ξ, the factor that accounts for competition between electrons and holes, equaling −0.729±0.026. Absorption measurements, combined with the photoionization cross sections of electrons and holes, confirm these results. The agreement between theory and experiment suggests how to choose impurity concentrations that optimize net gain.
Induced absorption was observed in an InP:Fe crystal under nanosecond pulse illumination at 1.06- mu m wavelength. The maximum induced absorption was 0.05 cm/sup -1/ when probed at a 1.06- mu m wavelength and 0.30 cm/sup -1/ when probed at a 1.30- mu m wavelength. The kinetics are studied together with the photocurrent giving the recombination times of holes (100 ns) at room temperature and an estimate for that of electrons (0.5 ns). The induced absorption is attributed to a population redistribution of the different iron impurity states. Computer simulations are able to explain all the features found in the experiments and give values for the photoionization cross sections, in particular for the unknown cross section Fe/sup 2+*/ to Fe/sup 3+/+e/sup -/.>
We show that even if there is no direct hole–electron competition in InP:Fe the gain is lower than expected. We attribute this reduction of the gain to a thermally induced hole–electron competition that involves the excited state of Fe2+ (5T2). We present a new model for the photorefractive effect in InP:Fe, which we use to interpret our beam-coupling results. Some material parameters of the InP:Fe sample and particularly of the excited state are deduced. The same energy-transfer measurements conducted in GaAs give us the ratio of hole and electron photoionization cross sections.
Cette etude porte sur l'effet photorefractif dans le phosphure d'indium dope au fer (InP:Fe). Les gains optiques mesures en absence de champ electrique applique et a la longueur d'onde de 1,06 micrometre sont plus faibles que les valeurs calculees avec un modele qui tient compte d'un seul niveau d'energie (celui du fer) dans la bande interdite. Nous contribuons a determiner l'origine de cette reduction qui est attribuee dans la litterature, soit aux transitions indirectes liees a l'etat excite du fer soit a d'autres niveaux superficiels. Dans un premier temps, nous mettons en evidence la necessite d'effectuer des mesures en fonction de la temperature et a plusieurs longueurs d'onde (1,06 ; 1,32 et 1,535 micrometre) afin d'etablir les roles respectifs des differents niveaux d'energie dans les echantillons etudies ou l'effet photorefractif est domine par les trous a temperature ambiante. L'etude de la constante de temps d'effacement du reseau a permis de determiner les concentrations en ions Fe2+ et Fe3+. Nous comparons ensuite les courbes du gain mesure pour les trois longueurs d'onde en fonction de la temperature et du pas avec les simulations effectuees a partir des differents modeles comprenant soit le niveau excite du Fe2+*, soit un second niveau place pres de la bande de conduction puis, pres de la bande de valence. Dans les echantillons etudies, ces differentes comparaisons ont montre qu'a basse temperature l'effet photorefractif est influence par un second niveau situe pres de la bande de valence alors qu'a temperature ambiante il faut a la fois tenir compte du second defaut et de l'etat excite du fer