Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Physics Condensed Matter

Photochromism of vacancy-related centres in diamond

Konstantin V. Iakoubovskii, G.J. Adriaenssens, Miloš Nesládek

Published Dec 13, 1999• 104 citations
Publisher

Abstract

Optical experiments, involving photoluminescence (PL), the PL excitation and quenching spectra, as well as transmission and its quenching, were used to analyse the photochromic behaviour of some vacancy-related complexes in diamond. The 2.156 eV, 1.945 eV and 1.68 eV optical centres in CVD diamond are attributed to the neutral nitrogen-vacancy, negative nitrogen-vacancy and neutral silicon-vacancy ([Si-V](0)) centres, respectively. Oscillatory behaviour in the excitation spectrum of the 1.68 eV luminescence is observed and from the threshold of the oscillations a position of Ec - 2.05 eV is suggested for the ground state of the [Si-V](0) centre.

DOI
10.1088/0953-8984/12/2/308

Related papers

Laser-related spectroscopic parameters of NV colour centres in diamond

Vasili G. Savitski, Elisabeth Fraczek, Matthew W. Dale +8 more

One of the most common impurities in synthetic diamond is single substitutional nitrogen, which is incorporated in the diamond lattice substituting a carbon atom. If the nitrogen is adjacent to a vacancy in the diamond lattice, it forms the nitrogen-vacancy (NV) colour centre (CC). The negatively charged state of this CC, NV-, is particularly well studied since its quantum properties are suitable for applications such as quantum information processing, single-photon sources and optical magnetometry. NV CCs in the neutral state (NV0) are less widely studied. This CC exhibits broadband luminescence at slightly shorter wavelengths than NV-, and hence is also potentially of interest for tuneable and ultrafast visible laser applications. In this report, we present a detailed study of the laser-related spectroscopic properties of a diamond containing NV0 and NV-CCs.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 1, 2017•2 citations

Optimum Photoluminescence Excitation and Recharging Cycle of Single Nitrogen-Vacancy Centers in Ultrapure Diamond

Katja Beha, Anton Batalov, Neil B. Manson +2 more

Important features in the spectral and temporal photoluminescence excitation of single nitrogen-vacancy (NV) centers in diamond are reported at conditions relevant for quantum applications. Bidirectional switching occurs between the neutral (${\mathrm{NV}}^{0}$) and negatively charged (${\mathrm{NV}}^{\ensuremath{-}}$) states. Luminescence of ${\mathrm{NV}}^{\ensuremath{-}}$ is most efficiently triggered at a wavelength of 575 nm which ensures optimum excitation and recharging of ${\mathrm{NV}}^{0}$. The dark state of ${\mathrm{NV}}^{\ensuremath{-}}$ is identified as ${\mathrm{NV}}^{0}$. A narrow resonance is observed in the excitation spectra at 521 nm, which mediates efficient conversion to ${\mathrm{NV}}^{0}$.

Physical Review Letters•Aug 30, 2012•194 citations

Optical and magnetic resonance studies of point defects in CVD diamond

Ulrika F. S. D’Haenens-Johansson

This thesis reports research conducted on point defects in single crystal diamond utilising the complementary techniques of electron paramagnetic resonance (EPR), optical absorption and photoluminescence (PL) spectroscopy. Intentional silicon-doping of chemical vapour deposition (CVD) diamond allowed the production of samples grown on differently oriented substrates and containing distinct silicon isotopic abundances. The EPR spectrum of the neutral charge state of the silicon split-vacancy centre in diamond, (Si-V)0, has been characterised in the literature. Evidence for the assignment of the 1.31 eV zero phonon line (ZPL) seen in absorption and PL to the 3A2g -> 3A1u transition arising at (Si-V)0 is presented. Reversible charge transfer between the negatively charged centre, (Si-V)− (ZPL at 1.68 eV), and (Si-V)0 enabled the determination of calibration factors relating defect concentrations to their respective ZPL intensities. Preferential alignment of trigonal centres, such as (Si-V), in CVD material grown on {110}-substrates has been observed. The formation of (Si-V) centres during CVD synthesis and via irradiation and annealing of silicon-doped diamond was studied. Variable temperature EPR spectroscopy under illumination was used to investigate the optical spin polarisation (SP) of the (Si-V)0 3A2g ground state. Two different mechanisms for the SP are considered; selective intersystem crossing of (Si-V)0, and photoionisation of (Si-V)−. The properties of (Si-V)0 are compared to those of the extensively studied negatively charged nitrogen vacancy centre, (N-V)−. The effective spin-lattice relaxation and spin polarisation rates for both centres during continuous illumination are explored using pulsed EPR methods. A new defect, labelledWAR3, with spin S = 1 2 was observed in silicon-doped diamond and characterised using multifrequency EPR. Analysis of the data revealed that WAR3 is the neutral charge state of a silicon divacancy complex decorated by a hydrogen atom, (Si-V2:H)0. The experimentally derived 29Si and 1H hyperfine parameters are in good agreement with the values calculated using the spindensity- functional technique, confirming this model and ruling out a non-planar structure.

•Sep 11, 2026•0 citations

Nitrogen-vacancy centers in diamond: discovery of additional electronic states

Minh Tuan Luu, Ali Tayefeh Younesi, Ronald Ulbricht

Abstract Nitrogen-vacancy (NV) defect centers in diamond are key to applications in quantum sensing and quantum computing. They create localized electronic states in the diamond lattice with distinct population relaxation pathways following photoexcitation that ultimately enable its unique properties. The defect is known to exist in two charge states: neutral and negative, with respectively one and two known optically-active electronic transitions. Here, we report on the observation of a large number of hitherto undiscovered excited electronic states in both charge states as evidenced by distinct optical transitions in the infrared to ultraviolet part of the spectrum. These transitions are observed by monitoring the electronic relaxation of NV centers after photoexcitation using transient absorption spectroscopy, directly probing transient phenomena occurring on timescales from femtoseconds to microseconds. We also for the first time probed the electron transfer dynamics from the 3 E state of NV− to nearby single-substitutional nitrogen defects (N s ) that leads to the well-known effect of NV photoluminescence quenching.

Materials for Quantum Technology•Jul 10, 2024•16 citations

Multiple-photon excitation of nitrogen vacancy centers in diamond

Peng Ji, Ryan Balili, Jonathan Beaumariage +3 more

We report the observation of multiphoton photoluminescence excitation (PLE) below the resonant energies of nitrogen vacancy (NV) centers in diamond. The quadratic and cubic dependence of the integrated fluorescence intensity as a function of excitation power indicates a two-photon excitation pathway for the ${\mathrm{NV}}^{\ensuremath{-}}$ charge state and a three-photon process involved for the neutral ${\mathrm{NV}}^{0}$ charge state, respectively. Comparing the total multiphoton energy with its single-photon equivalent, the PLE spectra follows the absorption spectrum of single photon excitation. We also observed that the efficiency of photoluminescence for different charge states, as well as the decay time constant, was dependent on the excitation wavelength and power.

arXiv:1710.07539•Physical review. B./Physical review. B•Apr 17, 2018•26 citations

Optical pumping cycle of the negative nitrogen-vacancy centre in diamond

Lachlan J. Rogers

The negative Nitrogen-Vacancy (NV) colour centre in diamond is an atomic-level impurity that is remarkably well suited for quantum information processing and quantum metrology applications. Underlying these properties is the fact that optical illumination causes the NV centre to preferentially populate one of its three spin levels. The mechanism that gives rise to this spin polarisation has not been well understood, despite intense research interest in the NV centre and its applications. This thesis arrives at an account of the spin polarisation mechanism, although a detailed theoretical treatment remains outstanding. The energy level structure of the NV centre is investigated using techniques of solid state spectroscopy. These include absorption and photoluminescence measurements made on diamonds at cryogenic and room temperatures in the presence of uniaxial stress, magnetic fields, and microwaves. Pulsed light experiments allow the dynamic processes within the NV centre to be measured. It is shown that at room temperature the orbital doublet excited state behaves like an orbital singlet, and this description is elegantly confirmed by single-site observations. This picture of the excited state is inconsistent with cryogenic measurements, and its behaviour is examined across a range of temperatures in order to resolve this tension. It is shown that electron-vibration interaction accounts for the quenching of orbital properties in the excited state with temperature. A new optical transition within the NV centre is reported at a wavelength of 1042 nm. It is established that this transition occurs between the intermediate singlet levels which are thought to provide the decay pathway that produces spin polarisation. The results are consistent with this understanding, and the order and properties of these singlet levels are established. Electron-vibration interaction is observed to be important within the singlet system. It is shown that electron-vibration interaction is an important detail in the NV optical pumping cycle. Taking it into consideration leads to the first plausible physical description of the spin polarisation mechanism. -- provided by Candidate.

•Jan 1, 2012•0 citations
Optical experiments, involving photoluminescence (PL), the PL excitation and quenching spectra, as well as transmission and its quenching, were used to analyse the photochromic behaviour of some vacancy-related complexes in diamond. The 2.156 eV, 1.945 eV and 1.68 eV optical centres in CVD diamond are attributed to the neutral nitrogen-vacancy, negative nitrogen-vacancy and neutral silicon-vacancy (Si-V) centres, respectively. Oscillatory behaviour in the excitation spectrum of the 1.68 eV luminescence is observed and from the threshold of the oscillations a position of Ec - 2.05 eV is suggested for the ground state of the Si-V centre.
One of the most common impurities in synthetic diamond is single substitutional nitrogen, which is incorporated in the diamond lattice substituting a carbon atom. If the nitrogen is adjacent to a vacancy in the diamond lattice, it forms the nitrogen-vacancy (NV) colour centre (CC). The negatively charged state of this CC, NV-, is particularly well studied since its quantum properties are suitable for applications such as quantum information processing, single-photon sources and optical magnetometry. NV CCs in the neutral state (NV0) are less widely studied. This CC exhibits broadband luminescence at slightly shorter wavelengths than NV-, and hence is also potentially of interest for tuneable and ultrafast visible laser applications. In this report, we present a detailed study of the laser-related spectroscopic properties of a diamond containing NV0 and NV-CCs.
Important features in the spectral and temporal photoluminescence excitation of single nitrogen-vacancy (NV) centers in diamond are reported at conditions relevant for quantum applications. Bidirectional switching occurs between the neutral (NV0{\mathrm{NV}}^{0}NV0) and negatively charged (${\mathrm{NV}}^{\ensuremath{-}}$) states. Luminescence of ${\mathrm{NV}}^{\ensuremath{-}}$ is most efficiently triggered at a wavelength of 575 nm which ensures optimum excitation and recharging of NV0{\mathrm{NV}}^{0}NV0. The dark state of ${\mathrm{NV}}^{\ensuremath{-}}$ is identified as NV0{\mathrm{NV}}^{0}NV0. A narrow resonance is observed in the excitation spectra at 521 nm, which mediates efficient conversion to NV0{\mathrm{NV}}^{0}NV0.
This thesis reports research conducted on point defects in single crystal diamond utilising the complementary techniques of electron paramagnetic resonance (EPR), optical absorption and photoluminescence (PL) spectroscopy. Intentional silicon-doping of chemical vapour deposition (CVD) diamond allowed the production of samples grown on differently oriented substrates and containing distinct silicon isotopic abundances. The EPR spectrum of the neutral charge state of the silicon split-vacancy centre in diamond, (Si-V)0, has been characterised in the literature. Evidence for the assignment of the 1.31 eV zero phonon line (ZPL) seen in absorption and PL to the 3A2g -> 3A1u transition arising at (Si-V)0 is presented. Reversible charge transfer between the negatively charged centre, (Si-V)− (ZPL at 1.68 eV), and (Si-V)0 enabled the determination of calibration factors relating defect concentrations to their respective ZPL intensities. Preferential alignment of trigonal centres, such as (Si-V), in CVD material grown on {110}-substrates has been observed. The formation of (Si-V) centres during CVD synthesis and via irradiation and annealing of silicon-doped diamond was studied. Variable temperature EPR spectroscopy under illumination was used to investigate the optical spin polarisation (SP) of the (Si-V)0 3A2g ground state. Two different mechanisms for the SP are considered; selective intersystem crossing of (Si-V)0, and photoionisation of (Si-V)−. The properties of (Si-V)0 are compared to those of the extensively studied negatively charged nitrogen vacancy centre, (N-V)−. The effective spin-lattice relaxation and spin polarisation rates for both centres during continuous illumination are explored using pulsed EPR methods. A new defect, labelledWAR3, with spin S = 1 2 was observed in silicon-doped diamond and characterised using multifrequency EPR. Analysis of the data revealed that WAR3 is the neutral charge state of a silicon divacancy complex decorated by a hydrogen atom, (Si-V2:H)0. The experimentally derived 29Si and 1H hyperfine parameters are in good agreement with the values calculated using the spindensity- functional technique, confirming this model and ruling out a non-planar structure.
Abstract Nitrogen-vacancy (NV) defect centers in diamond are key to applications in quantum sensing and quantum computing. They create localized electronic states in the diamond lattice with distinct population relaxation pathways following photoexcitation that ultimately enable its unique properties. The defect is known to exist in two charge states: neutral and negative, with respectively one and two known optically-active electronic transitions. Here, we report on the observation of a large number of hitherto undiscovered excited electronic states in both charge states as evidenced by distinct optical transitions in the infrared to ultraviolet part of the spectrum. These transitions are observed by monitoring the electronic relaxation of NV centers after photoexcitation using transient absorption spectroscopy, directly probing transient phenomena occurring on timescales from femtoseconds to microseconds. We also for the first time probed the electron transfer dynamics from the 3 E state of NV− to nearby single-substitutional nitrogen defects (N s ) that leads to the well-known effect of NV photoluminescence quenching.
We report the observation of multiphoton photoluminescence excitation (PLE) below the resonant energies of nitrogen vacancy (NV) centers in diamond. The quadratic and cubic dependence of the integrated fluorescence intensity as a function of excitation power indicates a two-photon excitation pathway for the ${\mathrm{NV}}^{\ensuremath{-}}$ charge state and a three-photon process involved for the neutral NV0{\mathrm{NV}}^{0}NV0 charge state, respectively. Comparing the total multiphoton energy with its single-photon equivalent, the PLE spectra follows the absorption spectrum of single photon excitation. We also observed that the efficiency of photoluminescence for different charge states, as well as the decay time constant, was dependent on the excitation wavelength and power.
The negative Nitrogen-Vacancy (NV) colour centre in diamond is an atomic-level impurity that is remarkably well suited for quantum information processing and quantum metrology applications. Underlying these properties is the fact that optical illumination causes the NV centre to preferentially populate one of its three spin levels. The mechanism that gives rise to this spin polarisation has not been well understood, despite intense research interest in the NV centre and its applications. This thesis arrives at an account of the spin polarisation mechanism, although a detailed theoretical treatment remains outstanding. The energy level structure of the NV centre is investigated using techniques of solid state spectroscopy. These include absorption and photoluminescence measurements made on diamonds at cryogenic and room temperatures in the presence of uniaxial stress, magnetic fields, and microwaves. Pulsed light experiments allow the dynamic processes within the NV centre to be measured. It is shown that at room temperature the orbital doublet excited state behaves like an orbital singlet, and this description is elegantly confirmed by single-site observations. This picture of the excited state is inconsistent with cryogenic measurements, and its behaviour is examined across a range of temperatures in order to resolve this tension. It is shown that electron-vibration interaction accounts for the quenching of orbital properties in the excited state with temperature. A new optical transition within the NV centre is reported at a wavelength of 1042 nm. It is established that this transition occurs between the intermediate singlet levels which are thought to provide the decay pathway that produces spin polarisation. The results are consistent with this understanding, and the order and properties of these singlet levels are established. Electron-vibration interaction is observed to be important within the singlet system. It is shown that electron-vibration interaction is an important detail in the NV optical pumping cycle. Taking it into consideration leads to the first plausible physical description of the spin polarisation mechanism. -- provided by Candidate.