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Superlattices and Microstructures

Biexcitonic effect on the nonlinear optical properties of GaAs/AlxGa1−xAs quantum wire near the band edge

Pranay K. Sen, Saral Kumar Gupta, Manish K. Bafna

Published Jan 1, 2004• 2 citations
Publisher
DOI
10.1016/j.spmi.2003.12.001

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The recently reported high excitonic and biexcitonic binding energies in GaAs/GaxAl1-xAs quantum wells and quantum wells wires suggests the possibility of strong optical nonlinearities around the biexcitonic resonance. We calculate using a simple boson model the magnitude of the absorptive and dispersive nonlinearities in GaAs, around the biexciton resonance comparing bulk, quantum well and quantum well wire structures. An assessment of inhomogeneous line broadening due to a Gaussian distribution of quantum well wire radii is also presented.

Le Journal de Physique Colloques•Jun 1, 1988•1 citation
We have proposed a simplified theoretical model to examine the optical nutation in one-dimensional semiconductor quantum wires. We explored the role of excitons, biexcitons, and the effect of confinement in enhancing transient optical processes in such semiconductor nanostructures. We apply the time dependent perturbation technique to the coherent radiation-semiconductor interaction for a three-level system in the near band gap resonant excitation regime. We have incorporated the relaxation and dephasing mechanisms phenomenologically. The induced polarization is calculated theoretically and the role of biexciton density on the polarization is analyzed. Numerical estimations of refractive and absorptive optical nutation have been made for a GaAs∕AlxGa1−xAs quantum wire duly shined by femtosecond pulse Ti: sapphire laser. Our results agree qualitatively with available experimental observations.
The recently reported high excitonic and biexcitonic binding energies in GaAs/GaxAl1-xAs quantum wells and quantum wells wires suggests the possibility of strong optical nonlinearities around the biexcitonic resonance. We calculate using a simple boson model the magnitude of the absorptive and dispersive nonlinearities in GaAs, around the biexciton resonance comparing bulk, quantum well and quantum well wire structures. An assessment of inhomogeneous line broadening due to a Gaussian distribution of quantum well wire radii is also presented.