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Journal of Nonlinear Optical Physics & Materials

COMPARISON BETWEEN ULTRAFAST GAIN AND PHASE DYNAMICS IN SEMICONDUCTOR OPTICAL AMPLIFIERS

Li Wang, Zhi Wang, Wei‐Ping Huang

Published Jun 1, 2010• 0 citations
Publisher

Abstract

The ultrafast dynamics of gain and phase in bulk semiconductor optical amplifiers are numerically investigated over a broad band of about 200 nm based on the semiclassical method of density matrix equations. The gain dynamics and phase dynamics are compared in four different bands for 200 fs Gaussian pump pulse. It is predicted that the recovery time of phase may be longer or shorter than that of gain depending on probe wavelengths. Furthermore, phase recovery overshoot may appear at wavelengths shorter than the pump wavelength. These interesting features result from the competition between spectral-hole burning and carrier heating over the whole band.

DOI
10.1142/s0218863510005157

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The ultrafast dynamics of gain and phase in bulk semiconductor optical amplifiers are numerically investigated over a broad band of about 200 nm based on the semiclassical method of density matrix equations. The gain dynamics and phase dynamics are compared in four different bands for 200 fs Gaussian pump pulse. It is predicted that the recovery time of phase may be longer or shorter than that of gain depending on probe wavelengths. Furthermore, phase recovery overshoot may appear at wavelengths shorter than the pump wavelength. These interesting features result from the competition between spectral-hole burning and carrier heating over the whole band.
We numerically investigate the influence of the pump-probe wavelength on the gain and phase recovery dynamics of quantum-dot (QD) semiconductor optical amplifiers (SOAs). The temporal variations of the gain and phase recovery response are calculated at various pump-probe wavelengths, covering the emission wavelength of both the QD ground and excited states. The gain recovery becomes faster at the longer pump-probe wavelength due to the enlarged carrier escape time. The initial phase change turns from a negative to a positive value as the pump-probe wavelength becomes smaller, which is determined by the spectral position of the pump-probe wavelength in reference to the Gaussian-shaped inhomogeneous broadening. The calculated results agree with the previous experimental results measured by other experimental groups.
In this work, the ultrafast gain dynamics of a quantum dot (QD)-based semiconductor optical amplifier (SOA) is modeled on the basis of semiconductor Bloch equations that include microscopically calculated nonlinear scattering rates between QD carriers and the surrounding carrier reservoir. This enables us to separately study the dynamics of electrons and holes inside the device as well as the coherent effects related to the fast polarization dynamics. We show that the optical pulse power and the dephasing time of the polarization mainly affect the gain depletion inside the active region, while the electric injection current density and thus the internal carrier dynamics influence the gain recovery. We observe that carrier–carrier scattering is the source of desynchronized behavior of electrons and holes in the recovery dynamics of QD-based SOAs. The amplification of pulse trains in the SOA predicted by our model agrees well with experimental data.
We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.
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We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.