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Journal of Applied Physics

Model analysis for a current-step-like structure in a high Tc Josephson device coupled to a microwave signal

Yoshinao Mizugaki, Jian Chen

Published Mar 8, 2005• 3 citations
Publisher

Abstract

High Tc Josephson junctions have IcRn products as large as a few mV at liquid helium temperature, and hence, the frequency normalized by IcRn∕Φ0 becomes on the order of 10−3 for a gigahertz (GHz) microwave signal. (Here, Ic, Rn, and Φ0 are the critical current, the normal resistance, and a flux quantum, respectively.) It is well known that a microwave-current-driven Josephson junction does not exhibit clear Shapiro steps under such low frequency conditions. Instead of Shapiro steps, however, we often observe a current-step-like structure in the current–voltage curve of YBa2Cu3O7−δ grain boundary Josephson junctions coupled to a GHz signal. In this article, we present a model analysis for such current-step-like structures. Two types of device models are employed: a simple resistively and capacitively shunted junction model and a rf-field-driven two-junction superconducting quantum interference device model. Numerical results of the latter model agree with the experimental results, which indicates that the envelope of small Shapiro steps, including the effects of microwave-induced motion of flux quanta, appears as a current-step-like structure in a high Tc Josephson device coupled to a GHz microwave.

DOI
10.1063/1.1862765

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Terahertz Shapiro steps in high temperature SNS Josephson junctions

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High Tc Josephson junctions have IcRn products as large as a few mV at liquid helium temperature, and hence, the frequency normalized by IcRn∕Φ0 becomes on the order of 10−3 for a gigahertz (GHz) microwave signal. (Here, Ic, Rn, and Φ0 are the critical current, the normal resistance, and a flux quantum, respectively.) It is well known that a microwave-current-driven Josephson junction does not exhibit clear Shapiro steps under such low frequency conditions. Instead of Shapiro steps, however, we often observe a current-step-like structure in the current–voltage curve of YBa2Cu3O7−δ grain boundary Josephson junctions coupled to a GHz signal. In this article, we present a model analysis for such current-step-like structures. Two types of device models are employed: a simple resistively and capacitively shunted junction model and a rf-field-driven two-junction superconducting quantum interference device model. Numerical results of the latter model agree with the experimental results, which indicates that the envelope of small Shapiro steps, including the effects of microwave-induced motion of flux quanta, appears as a current-step-like structure in a high Tc Josephson device coupled to a GHz microwave.
We demonstrate current-step-like structures observed in a YBa 2 Cu 3 O 7−δ (YBCO) grain boundary Josephson junction (GBJJ) coupled to a gigahertz (GHz) signal. It is well known that a microwave-current-driven Josephson junction does not exhibit clear Shapiro steps under a low frequency condition of f << I c R n /ϕ 0 , where f , I c , R n , and ϕ 0 are the microwave frequency, the critical current of the junction, the normal resistance of the junction, and a flux quantum, respectively. Instead of Shapiro steps, however, we often observe an anomalous upturn in the current-voltage curve of YBCO GBJJ's coupled to a GHz signal. We refer to the upturn as a current-step-like structure. Numerical analysis using an rf-field-driven two-junction superconducting quantum interference device (SQUID) model indicates that the envelope of small Shapiro steps, including the effects of microwave-induced motion of flux quanta, appears as a current-step-like structure.
Experimental I-V curves of microwave-driven Josephson tunnel junctions with resistive shunts are reported. The results are in very good agreement with numerical calculations using the resistively shunted junction model. In the low-frequency regime there are three distinct regions in the I-V curves and two different types of Shapiro steps. It is demonstrated that the overall shape of the I-V curves can be explained by using an adiabatic interpretation of the junction response. The two different types of Shapiro steps are related to a compensation effect between dc and rf bias currents.
We propose a superconducting circuit based on the Bloch transistor, a quantum device consisting of two small-capacitance Josephson junctions, connected in series and having a small superconducting island in between. This device is driven by two dc electrical sources controlling Josephson oscillations of frequency fJ=2eVJ‾/hf_J = 2e\overline{V_J}/hfJ​=2eVJ​​/h, related to the average transistor voltage VJ‾\overline{V_J}VJ​​, and Bloch oscillations of frequency fB=IB‾/2ef_B = \overline{I_B}/2efB​=IB​​/2e, related to the average current IB‾\overline{I_B}IB​​ injected into the transistor island. We show that due to the Bloch transistor properties, these two types of oscillations are coupled and can mutually phase-lock, i.e., fJ=fBf_J = f_BfJ​=fB​. This leads to the formation of a current step on the current-voltage curve at IB‾=2efJ\overline{I_B} = 2ef_JIB​​=2efJ​, which is similar to the dual Shapiro step, appearing under microwave irradiation of frequency fff on the current-voltage curve of a small Josephson Junction at current I=2efI=2efI=2ef. Moreover, the Bloch transistor transconductance IB‾/VJ‾\overline{I_B}/\overline{V_J}IB​​/VJ​​ takes the fundamental value of 1/RQ1/R_Q1/RQ​, where RQ=h/4e2R_Q = h/4e^2RQ​=h/4e2 is the resistance quantum. The obtained results pave the way to an alternative quantum standard of resistance, based on the superconducting circuit and operating without applying a strong magnetic field.
We have studied the far infrared behavior of high -T/sub c/ superconductor-normal metal-superconductor (SNS) microbridges with T/sub c/>85 K and critical current-resistance products (I/sub c/R/sub N/) as high as 10 mV at 4 K. These are the highest I/sub c/R/sub N/ products reported to date for microfabricated Josephson junctions of any material. The junctions were integrated at the feeds of planar log-periodic antennas made from Au thin films. The junctions had dc normal state resistances R/sub N/ between 6 and 38 /spl Omega/, reasonably well matched to the antenna's estimated RF impedance of 53 /spl Omega/. Far infrared laser radiation at 404, 760, and 992 GHz induced distinct Shapiro steps (i.e. constant voltage steps at voltages n(hf/2e), n=1,2,...) in the current voltage characteristics as well as modulation of the critical current. Steps were observed at voltages up to 17 mV and 6 mV, at temperatures of 9 K and 57 K respectively. This corresponds to maximum Josephson oscillation frequencies of 8 and 3 THz at these temperatures. These are the first far infrared measurements performed on high T/sub c/ junctions. Measurements of the power, frequency, and temperature dependence of the Shapiro steps are presented and discussed in the context of a resistively and capacitively shunted junction (RCSJ) model. A value of 4.5 fF for the junction capacitance is inferred from the hysteresis of the slightly underdamped current-voltage characteristics. >
A high-Tc dc superconducting quantum interference device (SQUID) with three Josephson junctions (JJs) in series in each of its arms has been fabricated. Its Shapiro steps were studied using microwave (rf) radiation of 10 GHz and weak magnetic fields. The appearance of giant Shapiro steps and of some of half-integer steps was observed. Separation between the adjacent Shapiro steps could be tuned by rf magnetic fields and small external dc magnetic fields. This phenomenon was analyzed by phase locking the JJs in the SQUID.
We have studied the far infrared behavior of high -T/sub c/ superconductor-normal metal-superconductor (SNS) microbridges with T/sub c/>85 K and critical current-resistance products (I/sub c/R/sub N/) as high as 10 mV at 4 K. These are the highest I/sub c/R/sub N/ products reported to date for microfabricated Josephson junctions of any material. The junctions were integrated at the feeds of planar log-periodic antennas made from Au thin films. The junctions had dc normal state resistances R/sub N/ between 6 and 38 /spl Omega/, reasonably well matched to the antenna's estimated RF impedance of 53 /spl Omega/. Far infrared laser radiation at 404, 760, and 992 GHz induced distinct Shapiro steps (i.e. constant voltage steps at voltages n(hf/2e), n=1,2,...) in the current voltage characteristics as well as modulation of the critical current. Steps were observed at voltages up to 17 mV and 6 mV, at temperatures of 9 K and 57 K respectively. This corresponds to maximum Josephson oscillation frequencies of 8 and 3 THz at these temperatures. These are the first far infrared measurements performed on high T/sub c/ junctions. Measurements of the power, frequency, and temperature dependence of the Shapiro steps are presented and discussed in the context of a resistively and capacitively shunted junction (RCSJ) model. A value of 4.5 fF for the junction capacitance is inferred from the hysteresis of the slightly underdamped current-voltage characteristics.>