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Physical Review A

Thermalization of trapped ions: A quantum perturbation approach

S. K. Lamoreaux

Published Dec 1, 1997• 43 citations
Publisher

Abstract

The rate at which external random thermal fluctuations drive transitions between, and cause decoherence of, the near ground vibrational (harmonic oscillator) quantum states of trapped cold ions is of crucial importance in relation to quantum computing. Presented here is an estimate of these rates, for a single trapped ion, based on a quantum perturbation approach where an external thermal energy reservoir is electrically coupled to the ion. The results are for a general system, and it is shown that the relevant parameter in the interpretation of experimentally observed heating rates is the correlation time of the fluctuations. The rates due to the fluctuating electric field associated with blackbody radiation are also considered and shown to be negligible.

DOI
10.1103/physreva.56.4970

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•Jan 1, 2000•0 citations
The rate at which external random thermal fluctuations drive transitions between, and cause decoherence of, the near ground vibrational (harmonic oscillator) quantum states of trapped cold ions is of crucial importance in relation to quantum computing. Presented here is an estimate of these rates, for a single trapped ion, based on a quantum perturbation approach where an external thermal energy reservoir is electrically coupled to the ion. The results are for a general system, and it is shown that the relevant parameter in the interpretation of experimentally observed heating rates is the correlation time of the fluctuations. The rates due to the fluctuating electric field associated with blackbody radiation are also considered and shown to be negligible.
Motional heating of ions in microfabricated traps is one of the open challenges hindering experimental realizations of large-scale quantum processing devices. Recently, a series of measurements of the heating rates in surface-electrode ion traps characterized their frequency, distance, and temperature dependencies, but our understanding of the microscopic origin of this noise remains incomplete. In this work we develop a theoretical model for the electric field noise which is associated with a random distribution of adsorbed atoms on the trap electrode surface. By using first-principles calculations of the fluctuating dipole moments of the adsorbed atoms we evaluate the distance, frequency, and temperature dependence of the resulting electric field fluctuation spectrum. Our theory reproduces correctly the ${d}^{\ensuremath{-}4}$ dependence with distance of the ion from the electrode surface and calculates the noise spectrum beyond the standard scenario of two-level fluctuators by incorporating all the relevant vibrational states. Our model predicts a regime of 1/f1/f1/f noise which commences at roughly the frequency of the fundamental phonon transition rate and a thermally activated noise spectrum which for higher temperatures exhibits a crossover as a function of frequency.
Strings of ions confined in a radio-frequency trap represent a promising architecture for quantum computers. The ions can be considered as an ensemble of harmonic oscillators, interacting through the Coulomb repulsion, and subject to the influence of the external environment, here represented by an electromagnetic field. In this view, the system is regarded as an open quantum system. By decomposing the oscillations into normal modes, a quantum master equation can be derived, which is of paramount importance to study quantum phenomena such as decoherence and entanglement. The solution of the master equation, gives information about the thermal equilibrium state, the energy distribution and the dynamical behavior of the trapped ions.
We consider two different kinds of fluctuations in an ion trap potential: external fluctuating electrical fields, which cause statistical movement (``wobbling'') of the ion relative to the center of the trap, and fluctuations of the spring constant, which are due to fluctuations of the ac component of the potential applied in the Paul trap for ions. We write down master equations for both cases and, averaging out the noise, obtain expressions for the heating of the ion. We compare our results to previous results for far-off resonance optical traps and heating in ion traps. The effect of fluctuating external electrical fields for a quantum gate operation (controlled-NOT) is determined and the fidelity for that operation derived.
Known as an engineered reservoir due to fluctuations in trap parameter, a classical source of quantum decoherence is considered for a single trapped ion theoretically. For simplicity it is assumed that the fluctuations involved are white noise processes, which enables us to give a simple master equation description of this source of decoherence. Our results show that the decoherence rate depends on the vibrational quantum number in different ways corresponding to the vibrational excitation sideband used there. Besides, this source of decoherence also leads to occurrence of dissipation in the ion system.
This thesis is concerned with various aspects of ion traps and their use as a quantum simulation and computation device. In its first part we investigate various sources of noise and decoherence in ion traps. As quantum information is very fragile, a detailed knowledge of noise and decoherence sources in a quantum computation device is essential. In the special case of an ion trap quantum computer we investigate the effects of intensity and phase noise in the laser, which is used to perform the gate operations. We then look at other sources of noise which are present without a laser being switched on. These are fluctuations in the trapping frequency caused by noise in the electric potentials applied to the trap and fluctuating electrical fields which will cause heating of the centre-of-mass vibrational state of the ions in the trap. For the case of fluctuating electrical fields we estimate the effect on a quantum gate operation. We then propose a scheme for performing quantum gates without having the ions cooled down to their motional ground state. The second part deals with various aspects of the use of ion traps as a device for quantum computation. We start with the use of ionic qubits as a measurement device for the centre-of-mass vibrational mode and investigate in detail the effect these measurements will have on the vibrational mode. If one wants to use quantum computation devices as systems to simulate quantum mechanics, it is of interest to know how to simulate say a k-level system with N qubits. We investigate the easiest case of this wider problem and look at how to simulate a three-level system (a so called trit) with two qubits in an ion trap quantum computer. We show how to get and measure a SU (3) geometric phase with this toy model. Finally we investigate how to simulate collective angular momentum models with a string of qubits in an ion trap. We assume that the ionic qubits are coupled to a thermal reservoir and derive a master equation for this case. We investigate the semiclassical limit of this master equation and, in the case for two qubits in the trap, determine the entanglement of the steady state. We also outline a way to find the steady state for the master equation using coherence vectors.