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Optical Fiber Communication Conference

Nonlinear coupling, asymmetry, and switching in ZnS waveguides

B. C. Svensson, Gaetano Assanto, Ursula J. Gibson, C. T. Seaton, G. I. Stegeman

Published Jan 1, 1987• 0 citations
Publisher

Abstract

Prism coupling of an argon laser into a ZnS waveguide was investigated for power slew rates much less than the nonlinearity relaxation time. The asymmetries and switching as a function of coupling conditions predicted by Carter and Chen1 are demonstrated clearly for the first time, we believe. In addition we also observed increasing absorption bistability2 in conditions consistent with the angular switching results but different from those in which bistability has been previously reported in ZnS waveguides.3

DOI
10.1364/ofc.1987.tuq35

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Prism coupling of an argon laser into a ZnS waveguide was investigated for power slew rates much less than the nonlinearity relaxation time. The asymmetries and switching as a function of coupling conditions predicted by Carter and Chen1 are demonstrated clearly for the first time, we believe. In addition we also observed increasing absorption bistability2 in conditions consistent with the angular switching results but different from those in which bistability has been previously reported in ZnS waveguides.3
Utilizing prism coupling of an argon laser beam into a nonlinear ZnS waveguide we have observed power-dependent optical bistability. We detuned the incidence angle by several linewidths from the optimal low power efficiency case. At this position we observed switching and hysteresis and verified the hysteresis loop to be bistable. The origin of the bistability we tentatively identified as a combination of intensity-dependent absorption and dispersion. Our conditions for bistability were different from those of W. Lukosz et al. in OPTICAL BISTABILITY III (Springer-Verlag, New York, 1986), p. 109.
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Previously reported observations of optical bistability in a GaAs/GaAlAs waveguide cavity included whole-sample thermally induced absorptive and refractive bistability [1] and localised (μs) thermally induced absorptive bistability [2]. Other groups have observed refractive bistability due to an optoelectronic mechanism in MQW GaAs/GaAlAs waveguides [3,4]. In this paper we report the observation of bistability due to thermally induced changes in leaky modes within a GaAs/GaAlAs waveguide and discuss the optimisation of optoelectronic nonlinearities in semiconductor guides of this type. A leaky planar waveguide consists of a low index layer bounded by two higher index layers. These exhibit radiative losses, where for the nth order mode the attenuation coefficient is proportional to (n+1)2 [5]. In this investigation the waveguides used were short enough to allow good transmission of the lower order modes.