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Applied Physics Letters

Variable optical delays at 1.55 μm using fast light in an InAs/InP quantum dash based semiconductor optical amplifier

Anthony Martinez, Guy Aubin, F. Lelarge, R. Brenot, Jean Landreau, A. Ramdane

Published Sep 1, 2008• 9 citations
Publisher

Abstract

Room temperature optical variable delays are demonstrated using InAs/InP quantum dash semiconductor optical amplifiers (SOAs) at 1.55 μm. A microwave frequency modulated single optical beam allows to demonstrate fast light through the achievement of maximum optical delays of 136 ps at 250 MHz and ∼55 ps at 2 GHz by means of electrical control of the SOA bias current. The group index variation is attributed to enhanced nearly degenerate four wave mixing of this material system as well as population pulsation.

DOI
10.1063/1.2973168

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Room temperature optical variable delays are demonstrated using InAs/InP quantum dash semiconductor optical amplifiers (SOAs) at 1.55 μm. A microwave frequency modulated single optical beam allows to demonstrate fast light through the achievement of maximum optical delays of 136 ps at 250 MHz and ∼55 ps at 2 GHz by means of electrical control of the SOA bias current. The group index variation is attributed to enhanced nearly degenerate four wave mixing of this material system as well as population pulsation.
Recent progress in the field of quantum dot/dash based semiconductor optical amplifiers (SOAs) for slow and fast light is discussed. Room temperature fast light has been obtained in InAs/InP QDash based SOAs by means of coherent population oscillation and four wave mixing (FWM) effects. Typical optical delays amount to 55 ps at 2 GHz. Growth optimization of the QDashes allowed us to achieve high modal gain, leading to very similar performances, e.g. gain and FWM efficiency, to those of a bulk SOA. A novel approach based on linear spectrograms is also introduced to measure the phase shift induced by wave mixing in an SOA.
We demonstrate room temperature optically and electrically controllable group delay using population oscillation in a quantum-dot (QD) semiconductor optical amplifier (SOA). A reduction of the group index up to 10% with a bandwidth of 13 GHz is achieved under different configurations of injection current and optical pump intensity. Our theoretical results based on population pulsation agree well with experimental data. We extract the linewidth enhancement factor and effective carrier diffusion coefficient of the QD SOA. We also observe slow light when the injection current is increased.
Controlling the group velocity of light has great potential applications in future optical communication, photonic computing, and microwave signal processing. These applications have recently triggered immense experimental and theoretical interest in the research community. Numerous studies report large optical delays while sacrificing many important aspects of engineering feasibility: bandwidth, device compactness, room temperature operation, ease of integration, and minimized signal insertion loss. Slow and fast light in the quantum-dot and quantum-well semiconductor optical amplifiers (SOAs) address many of these characteristics. First, this dissertation presents variable slow light in quantum-dot SOAs using population oscillation in an absorptive medium. Bandwidth tuning of slow light is observed with forward and reverse bias of quantum-dots. Second, the study explores four-wave mixing and population oscillation in a quantum-well gain medium. Control of optical advance and bandwidth is achieved by the medium's electrical bias or the optical pump power. Moreover, the fast light in the cascade of N number of quantum-well SOAs is experimentally and theoretically investigated. The cascaded scheme uses SOA-to-SOA attenuators to achieve active delay-bandwidth control. Finally, a large delay-bandwidth scheme is presented in which slow-to-fast light is observed by means of absorption to gain switching. More than a half cycle of tunable delay at 1 GHz bandwidth is achieved at optical frequencies.
Optical buffer is a key component in all-optical information processing systems. Slow light at room temperature via four-wave mixing in semiconductor an optical amplifier (SOA) is experimentally investigated. Time delay of 0.4 ns is achieved for a sinusoidal modulation signal at 0.1GHz, corresponding to a delay-bandwidth product (DBP) of 0.04. Factors that affect the experimental results are discussed. It is found out that the variable optical delay via four-wave mixing in SOA can be controlled either electrically by changing the SOA bias, or optically by varying the pump power or pump-probe detuning.
Slow and fast light in quantum-well (QW) and quantum-dot (QD) semiconductor optical amplifiers (SOAs) using nonlinear quantum optical effects are presented.We demonstrate electrical and optical controls of fast light using the coherent population oscillation (CPO) and four wave mixing (FWM) in the gain regime of QW SOAs.We then consider the dependence on the wavelength and modal gain of the pump in QW SOAs.To enhance the tunable photonic delay of a single QW SOA, we explore a serial cascade of multiple amplifiers.A model for the number of QW SOAs in series with variable optical attenuation is developed and matched to the experimental data.We demonstrate the scaling law and the bandwidth control by using the serial cascade of multiple QW SOAs.Experimentally, we achieve a phase change of 160 • and a scaling factor of four at 1 GHz using the cascade of four QW SOAs.Finally, we investigate CPO and FWM slow and fast light of QD SOAs.The experiment shows that the bandwidth of the time delay as a function of the modulation frequency changes in the absorption and gain regimes due to the carrier-lifetime variation.The tunable phase shift in QD SOA is compared between the ground-and first excited-state transitions with different modal gains.
Tunable delays in semiconductor optical amplifiers are achieved via four wave mixing between a strong pump beam and a modulated probe beam. The delay of the probe beam can be controlled both electrically, by changing the SOA bias, and optically, by varying the pump power or the pump-probe detuning. For sinusoidal modulated signal at 0.5 GHz, a tunable delay of 1.6 ns is achieved. This corresponds to a RF phase change of 1.6 pi. For 1.3 ns optical pulses propagating through the SOA a delay of 0.59 ns is achieved corresponding to a delay-bandwidth product exceeding 0.45. For both the cases, slow light and superluminal light are observed as the pump-probe detuning is varied.