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Optics Communications

Active control of transmission and group velocity in one-dimensional photonic crystals

Hamed Sattari, Mostafa Sahrai

Published Jan 1, 2013• 14 citations
Publisher
DOI
10.1016/j.optcom.2013.08.030

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Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals. Numerical simulations demonstrate that the enhancement of stimulated radiation, as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap, are related to the negative imaginary part of the complex effective refractive index of doped layers. This means that the complex effective refractive index has a negative imaginary part, and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly. Therefore, the spontaneous emission can be enhanced, the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason, the group velocity close to the edges of band gap is very small or abnormal. OCIS codes: 130.3120, 120.7000, 160.4670, 120.4570, 160.5690, 230.4170. More and more importance has been attached to the unique behaviors of electromagnetic wave propagating in photonic crystals, a novel and artificial photonic mate-

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We propose a design of an all-optical transistor based on a one-dimensional photonic-crystal cavity doped with a four-level N\mathsf{N}N-type active Raman gain medium. The calculated results show that in a photonic-crystal cavity of this kind transmission and reflection of the probe (Raman) beam are strongly dependent on the optical switching power. Transmission and reflection of the probe beam can be greatly amplified or attenuated. Therefore the optical switching field can serve as a gate field of the transistor to effectively control propagation of the weak probe field. It is shown that the group velocity of the probe pulse can be controlled in the range from subluminal (slow light) to superluminal (fast light).
Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals. Numerical simulations demonstrate that the enhancement of stimulated radiation,as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap,are related to the negative imaginary part of the complex effective refractive index of doped layers.This means that the complex effective refractive index has a negative imaginary part,and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly.Therefore,the spontaneous emission can be enhanced,the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason,the group velocity close to the edges of band gap is very small or abnormal.
Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals. Numerical simulations demonstrate that the enhancement of stimulated radiation, as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap, are related to the negative imaginary part of the complex effective refractive index of doped layers. This means that the complex effective refractive index has a negative imaginary part, and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly. Therefore, the spontaneous emission can be enhanced, the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason, the group velocity close to the edges of band gap is very small or abnormal. OCIS codes: 130.3120, 120.7000, 160.4670, 120.4570, 160.5690, 230.4170. More and more importance has been attached to the unique behaviors of electromagnetic wave propagating in photonic crystals, a novel and artificial photonic mate-