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Physical Review Letters

Identification of Higher-Order Electronic Coherences in Semiconductors by their Signature in Four-Wave-Mixing Signals

Georg Bartels, A. Stahl, V. M. Axt, Björn Haase, U. Neukirch, J. Gutowski

Published Dec 28, 1998• 64 citations
Publisher

Abstract

Four-wave-mixing signals from excitons under linear-circular polarized excitation exhibit an elliptical polarization, depending on both the pulse delay and the spectral position. Besides the resonances corresponding to excitons and exciton-biexciton transitions, a breakup of the exciton line is found reflecting the influence of correlations on the four-point level. An analysis accounting for the exciton density, the bound biexciton, and the exciton-exciton scattering continuum reveals that these features are not due to an antibound two-exciton state. Instead, they result from an interference of the correlated exciton continuum with the exciton density. In addition, the modeling shows that the signals ellipticity is highly sensitive to the influences of different correlations and, therefore, allows for a discrimination of their contributions.

DOI
10.1103/physrevlett.81.5880

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Four-wave-mixing signals from excitons under linear-circular polarized excitation exhibit an elliptical polarization, depending on both the pulse delay and the spectral position. Besides the resonances corresponding to excitons and exciton-biexciton transitions, a breakup of the exciton line is found reflecting the influence of correlations on the four-point level. An analysis accounting for the exciton density, the bound biexciton, and the exciton-exciton scattering continuum reveals that these features are not due to an antibound two-exciton state. Instead, they result from an interference of the correlated exciton continuum with the exciton density. In addition, the modeling shows that the signals ellipticity is highly sensitive to the influences of different correlations and, therefore, allows for a discrimination of their contributions.
The combined influence of biexcitons and the two-exciton scattering continuum is analyzed. The analysis is based on a density matrix description of a two-band semiconductor accounting for mean-field contributions, bound biexcitons and the correlated parts of the two-exciton scattering continuum on a common footing. Consistent with the microscopic formulation, the influence of biexcitons as well as that of the two-exciton continuum is represented by a correlation kernel which is obtained from an integral equation. For a one-dimensional model four-wave mixing signals are calculated solving numerically the resulting coupled nonlinear equations for excitation conditions in the vicinity of the 1s resonance. A strong compensation between the exciton–exciton continuum and the mean-field contribution is found for all excitation conditions studied. Surprisingly, biexcitonic signatures turn out to be enhanced when continua are included in the description.
The influence of fifth-order coherences on the spectrally resolved four-wave mixing response of predominantly homogeneously broadened quasi-two-dimensional excitons is studied. Fifth-order signatures are discussed as a function of spectral position and excitation polarization. An exciton–biexciton beating for positive delay times is the dominant effect, which is pronounced at the exciton–biexciton transition for collinearly polarized excitation and at the exciton transition for cross-linearly polarized excitation. For negative delay times and collinearly polarized excitation a pronounced exciton–biexciton beating at the exciton resonance is observed that is vanishing for long negative delays owing to the faster dephasing in the two-exciton continuum compared with the bound biexciton state. These results are in qualitative agreement with microscopic model calculations that include the coherent dynamics of one- and two-exciton resonances up to the fifth order in the optical field.
The time-averaged polarization angles of excitonic and biexcitonic four-wave-mixing signals are investigated in spectrally resolved measurements for different angles between the linear excitation polarizations, delay times and pulse energies. For an angle close to 90° between the two incident polarizations the signal emitted at the spectral position of the excitonic resonance clearly shows different polarization angles as the delay is changed from negative to positive. Additionally, the polarization angles of the signals exhibit oscillations which are differently pronounced for negative and positive delay times. The experimental results are compared with numerical calculations based on a phenomenologically extended five-level model of the exciton-biexciton system.
We investigate the spectral properties of the excitonic nonlinear response in a GaAs quantum-well sample containing wells of different thicknesses. We observe both the heavy-hole biexciton and the light-hole biexciton in the transient four-wave mixing spectrum and estimate their binding energy dependence on well width. For moderate excitation densities the signal for negative delay at the heavy-hole exciton and biexciton resonances is due to two-photon transitions to the biexciton states through the exciton states. The temporal behavior of the transient four-wave mixing signal from the heavy-hole exciton resonance is strongly dependent on the spectral position of the laser. We show that this effect is due to interference phenomena and to excitation-induced dephasing.
A systematic analysis of excitonic and biexcitonic contributions to four-wave mixing in dependence on the polarization state and on the intensity of the exciting beams is presented for ZnSe/Zn1—xMgxSySe1—iiy quantum wells. The relative signals of excitons and biexcitons for different polarization configurations are discussed in terms of a microscopic density matrix model revealing excellent correspondence to the complex experimental data. In configurations which do not allow for a third-order contribution of the biexciton of zero angular momentum higher-order correlations are shown to become important already at densities as low as 1010 excitons cm—2/pulse.
The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.