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Solid State Communications

Non-Fermi liquid effects in the low temperature behaviour of a disordered strongly interacting electron system

WENJIE HUANG, J. W. Rasul

Published Sep 1, 1993• 0 citations
Publisher
DOI
10.1016/0038-1098(93)90422-j

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We have studied the one-dimensional periodic, symmetric Anderson model at half filling in the presence of disorder using finite-temperature quantum Monte Carlo techniques. We have examined for the first time the disorder both in hybridization between the local f-orbitals and the conduction electrons and in the local f-site energy, using a uniform distribution of width . The f-orbital local magnetic moment, the uniform magnetic susceptibility, the charge compressibility, and the nearest-neighbour magnetic correlation function have been calculated as a function of the disorder distribution width . We find that the disorder in hybridization has a dramatic effect on the low-temperature magnetic properties exhibiting a non-Fermi-liquid behaviour, and that for the range of temperature studied the magnetic susceptibility can be scaled by a power law with an exponent that is in agreement with recent experiments. On the other hand, disorder in the local f-orbital energy level does not show a nonFermi liquid behaviour.
This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.
The interplay of interactions and disorder in two-dimensional (2D) electron systems has actively been studied for decades. The paradigmatic approach involves starting with a clean Fermi liquid and perturbing the system with both disorder and interactions. Instead, we start with a clean non-Fermi liquid near a 2D ferromagnetic quantum critical point and consider the effects of disorder. In contrast with the disordered Fermi liquid, we find that our model does not suffer from runaway flows to strong coupling and the system has a marginally stable fixed point with perfect conduction.