Exact results for systems of electrons in the fractional quantum Hall regime

Allan H. MacDonald

Eero Tölö

The quantum Hall effect observed in a two-dimensional electron gas exposed to a perpendicular magnetic field is one of the most important modern discoveries in condensed matter physics. Advances in technology have allowed both experimental and computer-based theoretical study of miniature-size counterparts of conventional quantum Hall devices. Due to their versatile tunable electronic and magnetic properties, these systems show great promise for future technological applications. This work investigates two-dimensional semiconductor quantum dots and extended quantum rings in the quantum Hall regime. Besides being interesting on purely theoretical grounds as experimentally reachable extreme quantum-mechanical interacting many-body systems, the systems considered have major applicational interest in the realm of quantum information processing. Our emphasis lies in the strongly correlated regime where the enhanced electron-electron interactions lead to a computationally hard problem. For the systems with a few electrons, we employ the in principle exact configuration interaction method, which allows accurate study of the effects of the confinement potential and the effective form of the electron-electron interaction. Larger systems are modeled by Monte Carlo and density functional based methods. Moreover, we develop a computational method based on the reduced density-matrix functional theory to study the physics at the strongly correlated fractional quantum Hall regime with large particle numbers. The main results are related to the interplay of electron correlation and magnetism as well as the effects of tuning the electron correlation through sample engineering. The results on magnetism may find applications in future spintronics devices and spin qubits. Meanwhile, the results on electron correlation are relevant for the attempts to utilize fractional quantum Hall states in topologically protected quantum computing.

Nicolas Regnault

Moritz Helias, Daniela Pfannkuche

The elementary low energy excitations in the fractional quantum Hall (FQH) regime are known to be fractionally charged quasiparticles and quasiholes. This work focusses on quasiholes in a finite system of a few electrons treated by exact numerical diagonalization. Recent experimental [Chung et al., PRB 67, 201104 (2003)] and theoretical [Kane, Fisher, PRB 67, 045307 (2003)] work on quantum point contacts in the FQH regime showed strong evidence for single quasiparticle tunneling to be forbidden at low temperature. We want to gain insight into such constricted FQH systems by a numerical approach. Initially the basics of numerically treating a system in rectangular geometry and procedures to insert a quasihole excitation are presented. The excitations' stability and fractional charge is confirmed for different interactions. The question of quasihole tunneling is approached in two different systems: 1. A system posessing bound, localized states of a quasihole shows evidence for tunnel coupling between these states to exist. 2. Different potential forms to model a quantum point contact are investigated and the injection of a single quasihole near the constriction is surveyed in the system's time evolution.

B. G. Wybourne

M. Johnson, Allan H. MacDonald

The quantum Hall effect is due to discontinuities in the chemical potential at certain bulk electron densities. It has been conjectured that the resulting edge states in some fractional Hall gaps can have an intricate composite structure which reflects the correlations in the incompressible bulk fluid. We present direct numerical evidence obtained from exact-diagonalization studies in favor of this conjecture. We show that the states on the \ensuremath{\nu}=2/3 fractional quantum Hall edge constitute a two-component system in which a \ensuremath{\nu}=1/3 droplet of holes is contained within a \ensuremath{\nu}=1 droplet of electrons.