Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Transactions on Magnetics

Josephson tunneling logic gates with thin electrodes

M. Klein

Published Jan 1, 1977• 22 citations
Publisher

Abstract

Thin electrode flux penetration effects in Josephson tunneling gates are analyzed and experimental results exhibiting these effects are reported for the first time. Deep flux penetration accompanied by deep current penetration contribute added inductance not coupled to the external field, reducing sensitivity to control current. In addition, the field within the lower electrode reduces the end-to-end asymmetry introduced by the superconducting ground plane and makes the threshold characteristic more symmetrical. The thin film effects are embodied in an equivalent circuit. Experimental results for devices with thick and thin films are compared showing the expected increased symmetry and reduced sensitivity for the thin film case. Experimental results agree well with calculations based on the equivalent circuit.

DOI
10.1109/tmag.1977.1059336

Related papers

Effect of trapped magnetic flux on the threshold curves of three-junction superconducting quantum interference devices

Wen‐Hao Chang

Thin-film Josephson-junction quantum-interference devices require only a small amount of magnetic flux to switch them between the voltage state and the superconducting state. They are sensitive to any spurious magnetic flux present at the device. The magnetic flux may be trapped in the superconducting ground plane, particularly in ground plane holes. This paper analyzes the effects of the trapped magnetic flux on the threshold curves of three-junction Josephson interferometers. The threshold curves of the interferometer are calculated automatically by using a circuit optimization program. The automatic procedure of calculating the threshold curves of an interferometer can be applied to any Josephson-junction interferometer device. The threshold curves of both symmetric and asymmetric interferometers are calculated. We find that the threshold curves of a symmetric three-junction interferometer changes periodically as a function of the effective coupled trapped magnetic flux with a period of Φ0. The threshold curves are shifted and severely distorted in shape by the presence of the coupled trapped magnetic flux. The degeneracy of the threshold curves of a symmetric interferometer makes the unique quantitative determination of the trapped magnetic flux difficult. However, the degeneracy is removed in an asymmetric interferometer. The presence of the unbalanced trapped magnetic flux greatly shifts the entire threshold curve of an asymmetric interferometer.

Journal of Applied Physics•Dec 1, 1982•3 citations

DC and AC Responses of Josephson Vortex Flow Transistors with High Tc Superconducting Thin Films

Yasushi Doda

We fabricated Josephson vortex flow transistors (JVFTs) with a parallel array of Josephson junctions that were prepared using c-axis-oriented 100-nm-thick YBa 2 Cu 3 O 7-δ (YBCO) thin films grown on 24° bicrystal MgO (100) substrates. We observed clear modulations of the critical current and the flow voltage with DC current input to the control line that was inductively coupled to the array of junctions. From the results, we estimated the parameters of the device, e.g., the mutual inductance and the self-inductance, and calculated the operation frequency at which the device potentially exhibited these parameters. Moreover, the current gain and the transresistance were evaluated and found to be 0.5 and 0.15 Ω, respectively. In addition, we observed the high-frequency responses of the JVFT to the input AC current of the sine wave or the square pulse wave. A clear oscillation of the output voltage could be observed with a 1 MHz sine wave and 250 kHz square pulse wave. We also discussed the feasibility of higher frequency operation by using it as an input interface for a single flux quantum (SFQ) logic circuit.

IEICE Transactions on Electronics•Feb 1, 2006•5 citations

Double barrier long Josephson junctions with a contact to the intermediate superconducting layer

H. Kohlstedt, Alexey Vladimirovich Ustinov, F. Peter

We demonstrate a double barrier long Josephson tunnel junction device of overlap geometry with an external electric contact to the middle electrode. The junctions were fabricated with a standard Nb/Al-AlO/sub x//Nb process. To exhibit fluxon coupling effects in stacked junctions, the intermediate Nb layer thickness between two barriers has to be of the order of the London penetration depth, i.e. 90 nm for sputtered Nb films. By using a planarization process, we were able to avoid steep steps on the wafer and so to reduce the intermediate layer thickness to 90 nm. Double-junction stacks with areas from 10/spl times/10 /spl mu/m/sup 2/ to 20/spl times/600 /spl mu/m/sup 2/ were fabricated. In the best stacks, the difference in the critical currents of two junctions was less than 3%. Clear voltage locking effects were observed in current-voltage (I-V) characteristics.>

IEEE Transactions on Applied Superconductivity•Jun 1, 1995•5 citations

Characteristics of superconducting flux-flow transistors

Gert K. G. Hohenwarter, J. Martens, J.H. Thompson +3 more

The operational characteristics and physics of three superconducting thin-film-based transistor structures are compared. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction of Abrikosov fluxons in a superconducting film. The transistor amplification mechanism is accomplished by controlling magnetic field at the boundaries of the structures. An overview of the present understanding of device mechanisms and measured characteristics, including voltampere relations and small and large signal circuit parameters is provided. Demonstrated applications and anticipated limitations are discussed.

IEEE Transactions on Magnetics•Mar 1, 1991•23 citations

Inductance and penetration depth measurements of polycrystalline NbN films for all-NbN single flux quantum circuits

Yulong Zhong, Lu Zhang, Junjie Xie +9 more

Abstract In this paper, we report on a systematic study of the inductance and magnetic field penetration depth (λ) of polycrystalline NbN superconducting thin films. By employing a four-metal-layer fabrication process specifically designed for all-NbN single-flux-quantum circuits, we constructed a superconducting quantum interference device loop composed of two parallel NbN SNS junctions, NbN microstrips, and NbN ground planes for precise inductance measurement. At 4.2 K, as the linewidth increases from 1 μm to 30 μm, the inductance per unit length (L u) of NbN microstrips significantly decreases, for example, the L u of 250 nm thick NbN microstrips drops from 0.907 pH/μm to 0.047 pH/μm. Compared to Nb, the L u of polycrystalline NbN microstrips is approximately two to three times that of Nb, offering an advantage for manufacturing smaller superconducting inductors. Furthermore, we conducted simulation analysis using InductEx software to extract the λ of NbN films of varying thicknesses. The results indicate that as the film thickness increased from 45 nm to 600 nm, λ initially decreased sharply and then stabilized, with values ranging from 430 nm to 323 nm. Notably, once the film thickness exceeded 200 nm, λ remained essentially constant, even at a temperature of 10 K, where it showed good stability, albeit with a slight increase (about 50 nm) compared to 4.2 K. This dependence of λ on thickness is reasonably explained by considering the effects of NbN film thickness on the superconducting critical temperature and residual resistivity. These research findings not only deepen our understanding of the characteristics of superconducting films but also lay a solid foundation for the future design and manufacture of more compact superconducting circuits at the higher temperature of 10 K.

Superconductor Science and Technology•Nov 18, 2024•3 citations

Fabrication of experimental Josephson tunneling circuits

J. H. Greiner, S. Basavaiah, I. Ames

A multilevel thin-film process has been developed for fabricating experimental circuits containing Josephson tunneling gates, insulated crossings, superconducting contacts, and terminating resistors. The process utilizes a Nb film for the ground plane and Pb alloy films for overlying superconducting layers. Insulation is achieved through the use of vacuum-deposited SiO films and anodization of the Nb ground plane. An oxide formed by rf sputter-etching in an oxygen plasma is used for forming the tunneling barriers. Photoprocessing techniques are used for patterning. Through use of the process it has been possible to fabricate experimental memory and logic circuits which survive thermal cycling to 4.2 K and intervening storage at room temperature without significant changes in electrical characteristics.

Journal of Vacuum Science and Technology•Jan 1, 1974•67 citations
Thin electrode flux penetration effects in Josephson tunneling gates are analyzed and experimental results exhibiting these effects are reported for the first time. Deep flux penetration accompanied by deep current penetration contribute added inductance not coupled to the external field, reducing sensitivity to control current. In addition, the field within the lower electrode reduces the end-to-end asymmetry introduced by the superconducting ground plane and makes the threshold characteristic more symmetrical. The thin film effects are embodied in an equivalent circuit. Experimental results for devices with thick and thin films are compared showing the expected increased symmetry and reduced sensitivity for the thin film case. Experimental results agree well with calculations based on the equivalent circuit.
Thin-film Josephson-junction quantum-interference devices require only a small amount of magnetic flux to switch them between the voltage state and the superconducting state. They are sensitive to any spurious magnetic flux present at the device. The magnetic flux may be trapped in the superconducting ground plane, particularly in ground plane holes. This paper analyzes the effects of the trapped magnetic flux on the threshold curves of three-junction Josephson interferometers. The threshold curves of the interferometer are calculated automatically by using a circuit optimization program. The automatic procedure of calculating the threshold curves of an interferometer can be applied to any Josephson-junction interferometer device. The threshold curves of both symmetric and asymmetric interferometers are calculated. We find that the threshold curves of a symmetric three-junction interferometer changes periodically as a function of the effective coupled trapped magnetic flux with a period of Φ0. The threshold curves are shifted and severely distorted in shape by the presence of the coupled trapped magnetic flux. The degeneracy of the threshold curves of a symmetric interferometer makes the unique quantitative determination of the trapped magnetic flux difficult. However, the degeneracy is removed in an asymmetric interferometer. The presence of the unbalanced trapped magnetic flux greatly shifts the entire threshold curve of an asymmetric interferometer.
We fabricated Josephson vortex flow transistors (JVFTs) with a parallel array of Josephson junctions that were prepared using c-axis-oriented 100-nm-thick YBa 2 Cu 3 O 7-δ (YBCO) thin films grown on 24° bicrystal MgO (100) substrates. We observed clear modulations of the critical current and the flow voltage with DC current input to the control line that was inductively coupled to the array of junctions. From the results, we estimated the parameters of the device, e.g., the mutual inductance and the self-inductance, and calculated the operation frequency at which the device potentially exhibited these parameters. Moreover, the current gain and the transresistance were evaluated and found to be 0.5 and 0.15 Ω, respectively. In addition, we observed the high-frequency responses of the JVFT to the input AC current of the sine wave or the square pulse wave. A clear oscillation of the output voltage could be observed with a 1 MHz sine wave and 250 kHz square pulse wave. We also discussed the feasibility of higher frequency operation by using it as an input interface for a single flux quantum (SFQ) logic circuit.
We demonstrate a double barrier long Josephson tunnel junction device of overlap geometry with an external electric contact to the middle electrode. The junctions were fabricated with a standard Nb/Al-AlO/sub x//Nb process. To exhibit fluxon coupling effects in stacked junctions, the intermediate Nb layer thickness between two barriers has to be of the order of the London penetration depth, i.e. 90 nm for sputtered Nb films. By using a planarization process, we were able to avoid steep steps on the wafer and so to reduce the intermediate layer thickness to 90 nm. Double-junction stacks with areas from 10/spl times/10 /spl mu/m/sup 2/ to 20/spl times/600 /spl mu/m/sup 2/ were fabricated. In the best stacks, the difference in the critical currents of two junctions was less than 3%. Clear voltage locking effects were observed in current-voltage (I-V) characteristics.>
The operational characteristics and physics of three superconducting thin-film-based transistor structures are compared. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction of Abrikosov fluxons in a superconducting film. The transistor amplification mechanism is accomplished by controlling magnetic field at the boundaries of the structures. An overview of the present understanding of device mechanisms and measured characteristics, including voltampere relations and small and large signal circuit parameters is provided. Demonstrated applications and anticipated limitations are discussed.
Abstract In this paper, we report on a systematic study of the inductance and magnetic field penetration depth (λ) of polycrystalline NbN superconducting thin films. By employing a four-metal-layer fabrication process specifically designed for all-NbN single-flux-quantum circuits, we constructed a superconducting quantum interference device loop composed of two parallel NbN SNS junctions, NbN microstrips, and NbN ground planes for precise inductance measurement. At 4.2 K, as the linewidth increases from 1 μm to 30 μm, the inductance per unit length (L u) of NbN microstrips significantly decreases, for example, the L u of 250 nm thick NbN microstrips drops from 0.907 pH/μm to 0.047 pH/μm. Compared to Nb, the L u of polycrystalline NbN microstrips is approximately two to three times that of Nb, offering an advantage for manufacturing smaller superconducting inductors. Furthermore, we conducted simulation analysis using InductEx software to extract the λ of NbN films of varying thicknesses. The results indicate that as the film thickness increased from 45 nm to 600 nm, λ initially decreased sharply and then stabilized, with values ranging from 430 nm to 323 nm. Notably, once the film thickness exceeded 200 nm, λ remained essentially constant, even at a temperature of 10 K, where it showed good stability, albeit with a slight increase (about 50 nm) compared to 4.2 K. This dependence of λ on thickness is reasonably explained by considering the effects of NbN film thickness on the superconducting critical temperature and residual resistivity. These research findings not only deepen our understanding of the characteristics of superconducting films but also lay a solid foundation for the future design and manufacture of more compact superconducting circuits at the higher temperature of 10 K.
A multilevel thin-film process has been developed for fabricating experimental circuits containing Josephson tunneling gates, insulated crossings, superconducting contacts, and terminating resistors. The process utilizes a Nb film for the ground plane and Pb alloy films for overlying superconducting layers. Insulation is achieved through the use of vacuum-deposited SiO films and anodization of the Nb ground plane. An oxide formed by rf sputter-etching in an oxygen plasma is used for forming the tunneling barriers. Photoprocessing techniques are used for patterning. Through use of the process it has been possible to fabricate experimental memory and logic circuits which survive thermal cycling to 4.2 K and intervening storage at room temperature without significant changes in electrical characteristics.