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physica status solidi (b)

Many‐Body Theory for the Dense Exciton Gas of Direct Semiconductors II. Calculation of Exciton Level Shift and Damping in Dependence on Exciton Density

Frank Boldt, K. Henneberger, Volkhard May

Published Aug 1, 1985• 45 citations
Publisher

Abstract

Abstract The spectral properties of a dense exciton gas are discussed using an exciton self‐energy in second collisional Born approximation with respect to exciton‐exciton interaction. The shift of the continuum edge and the ls exciton as well as the increase of the damping of the ls exciton are calculated linearly in the exciton density. The distribution of ls excitons is assumed to be either a macro‐occupation of the k = 0 state or a Boltzmann distribution with effective temperature varying between 10 and 60 K. A weakening of the level shift is obtained with increasing temperature. In the case of macro‐occupation damping is calculated self‐consistently resulting in a sublinear dependence on density.

DOI
10.1002/pssb.2221300231

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Many-Body Theory for the Dense Exciton Gas of Direct Semiconductors. II. Calculation of Exciton Level Shift and Damping in Dependence on Exciton Density

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A THEORY OF COHERENT PROPAGATION OF LIGHT WAVE IN SEMICONDUCTORS (Ⅱ)

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This paper is the second part of a theory of the coherent propagation of light wave in semiconductors. After considering the interaction between electrons, the problem of a semiconductor interacting with light is discussed and the equation of exciton polarization wave excited by light wave is obtained. We point out that the equation can be approximated by a set of linear ones and the exciton polarization wave can be regarded as a Bose field only in the limit of low excitation. In this paper, the problem of coherent excitation of discrete exciton level is also discussed specifically. It is shown that the discrete exciton level system excited coherently is approximately equivalent to a two-level atom system excited by light wave in which the difference of energy level is dependent on the degree of excitation and the density of equivalent "two-level atoms" is determined by features of the exciton state wave function.

Acta Physica Sinica•Jan 1, 1981•0 citations

Theory of coherent propagation of a light wave in semiconductors. II

Zizhao Gan, Guozhen Yang

This paper contains the second part of a theory of the coherent propagation of a light wave in semiconductors. After considering the interaction among the electrons, we discuss the matter of the interaction of a semiconductor with light and derive equations of motion for the polarization wave of the excitons which have been excited by the light. We show how our equations can be approximated by linear ones and how the exciton polarization wave can be regarded as a Bose field in the limit of low excitation. In this paper we also discuss in detail the problem of the coherent excitation of discrete exciton levels. We show that the coherently excited discrete exciton is approximately equivalent to a two-level atom which is excited by a light wave; the atom energy-level spacing is a function of the degree of excitation, and the density of equivalent "two-level atoms" is determined by features of the exciton-state wave function.

Physical review. B, Condensed matter•Dec 15, 1982•5 citations
Abstract The spectral properties of a dense exciton gas are discussed using an exciton self‐energy in second collisional Born approximation with respect to exciton‐exciton interaction. The shift of the continuum edge and the ls exciton as well as the increase of the damping of the ls exciton are calculated linearly in the exciton density. The distribution of ls excitons is assumed to be either a macro‐occupation of the k = 0 state or a Boltzmann distribution with effective temperature varying between 10 and 60 K. A weakening of the level shift is obtained with increasing temperature. In the case of macro‐occupation damping is calculated self‐consistently resulting in a sublinear dependence on density.
Abstract The nonlinear response of a dense exciton gas in a platelet on an externally driven field is discussed using non equilibrium Green's function technique. A generalized Boltzmann‐equation of excitons containing many‐particle corrections in the diffusion‐, drift‐ and collision‐term is derived. Using a relaxed distribution (Boltzmann‐distribution) and an unrelaxed distribution (macro‐occupation) of ls‐excitons a bistability in exciton density as well as in the transmitted light intensity is obtained for a nearly resonant and stationary applied pump‐field of intensity 0.1 and 10kW/cm2, respectively. The bistability is obtained as a pure excitonic effect below the Mott‐transition.
Abstract Following the concept of Hanamura the Bose formalism of Usui is used to investigate the collective properties of a dense gas of excitons. The correlation self‐energy for excitons is calculated with the help of a special concept of pure excitonic screening. The dielectric function and the collective modes are studied in detail. It is shown, that the consideration of excited exciton states leads to a lowering of the 1s exciton level with increasing exciton density. Furthermore the damping of the 1s exciton due to exciton–exciton collisions is investigated.
This paper is the second part of a theory of the coherent propagation of light wave in semiconductors. After considering the interaction between electrons, the problem of a semiconductor interacting with light is discussed and the equation of exciton polarization wave excited by light wave is obtained. We point out that the equation can be approximated by a set of linear ones and the exciton polarization wave can be regarded as a Bose field only in the limit of low excitation. In this paper, the problem of coherent excitation of discrete exciton level is also discussed specifically. It is shown that the discrete exciton level system excited coherently is approximately equivalent to a two-level atom system excited by light wave in which the difference of energy level is dependent on the degree of excitation and the density of equivalent "two-level atoms" is determined by features of the exciton state wave function.
This paper contains the second part of a theory of the coherent propagation of a light wave in semiconductors. After considering the interaction among the electrons, we discuss the matter of the interaction of a semiconductor with light and derive equations of motion for the polarization wave of the excitons which have been excited by the light. We show how our equations can be approximated by linear ones and how the exciton polarization wave can be regarded as a Bose field in the limit of low excitation. In this paper we also discuss in detail the problem of the coherent excitation of discrete exciton levels. We show that the coherently excited discrete exciton is approximately equivalent to a two-level atom which is excited by a light wave; the atom energy-level spacing is a function of the degree of excitation, and the density of equivalent "two-level atoms" is determined by features of the exciton-state wave function.