Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics B

Photostability of single-photon emission from a single quantum dot in the 650-nm wavelength band at room temperature

Xingsheng Xu, Toshiki Yamada, A. Otomo

Published Feb 12, 2009• 8 citations
Publisher
DOI
10.1007/s00340-009-3378-2

Related papers

Narrow-band single-photon emission in the near infrared for quantum key distribution

E Wu, V. Jacques, Heping Zeng +3 more

We present a detailed study of photophysical properties of single color centers in natural diamond samples emitting in the near infrared under optical excitation. Photoluminescence of these single emitters has several striking features, including narrow-band (FWHM 2 nm) fully polarized emission around 780 nm, a short excited-state lifetime of about 2 ns, and perfect photostability at room temperature under our excitation conditions. Development of a triggered single-photon source relying on this single color center is discussed for application to quantum key distribution.

arXiv:quant-ph/0512032•Optics Express•Jan 1, 2006•83 citations

Photon-emission properties of quantum-dot-based single-photon sources under different excitations

Y. Ben, Zhibiao Hao, Changzheng Sun +2 more

Applied Physics B•Jun 9, 2005•2 citations

Photon antibunching from a single semiconductor quantum dot at room temperature

Michler, Imamoglu, Mason ' +3 more

Quantum Electronics and Laser Science Conference•Jan 1, 2000•0 citations

Stable single-photon source in the near infrared

T. Gaebel, I. Popa, A Gruber +3 more

Owing to their unsurpassed photostability, defects in solids may be ideal candidates for single-photon sources. Here we report on generation of single photons by optical excitation of a yet unexplored defect in diamond, the nickel–nitrogen complex (NE8) centre. The most striking feature of the defect is its emission bandwidth of 1.2 nm at room temperature. The emission wavelength of the defect is around 800 nm, which is suitable for telecom fibres. In addition, in this spectral region little background light from the diamond bulk material is detected. Consequently, a high contrast in antibunching measurements is achieved.

arXiv:quant-ph/0402213•New Journal of Physics•Jul 29, 2004•242 citations

Single photon emission from SiV centres in diamond produced by ion implantation

Chunlang Wang, Christian Kurtsiefer, Harald Weinfurter +1 more

We report the observation of single photon emission from single SiV (silicon-vacancy) centres in diamond produced by ion implantation. The high photostability and the narrow emission bandwidth of about 5 nm at room temperature make SiV centres interesting as a single photon source in practical quantum cryptography. We discuss problems that arise from the nonradiaditve transitions which lower the brightness of the source.

Journal of Physics B Atomic Molecular and Optical Physics•Dec 5, 2005•293 citations

Single-Photon Generation from Single Quantum Dots

Matthias Scholz, Thomas Aichele, Oliver J. Benson

Nanoscience and technology•Jan 1, 2008•1 citation
We present a detailed study of photophysical properties of single color centers in natural diamond samples emitting in the near infrared under optical excitation. Photoluminescence of these single emitters has several striking features, including narrow-band (FWHM 2 nm) fully polarized emission around 780 nm, a short excited-state lifetime of about 2 ns, and perfect photostability at room temperature under our excitation conditions. Development of a triggered single-photon source relying on this single color center is discussed for application to quantum key distribution.
Owing to their unsurpassed photostability, defects in solids may be ideal candidates for single-photon sources. Here we report on generation of single photons by optical excitation of a yet unexplored defect in diamond, the nickel–nitrogen complex (NE8) centre. The most striking feature of the defect is its emission bandwidth of 1.2 nm at room temperature. The emission wavelength of the defect is around 800 nm, which is suitable for telecom fibres. In addition, in this spectral region little background light from the diamond bulk material is detected. Consequently, a high contrast in antibunching measurements is achieved.