Physical review. B, Condensed matter
Frequency-dependent conductivity of the one-dimensional Hubbard model at strong coupling
Peter Horsch, W. Stephan
Abstract
The one-dimensional Hubbard model is characterized by charge-spin separation, but nevertheless in the doped system \ensuremath{\sigma}(\ensuremath{\omega}>0) does not vanish due to a small remaining coupling between charge and spin degrees of freedom. We derive an effective Hamiltonian and give in leading order (\ensuremath{\sim}${\mathit{J}}^{2}$) an analytic expression for \ensuremath{\sigma}(\ensuremath{\omega}) for the case of the Mott insulator doped with one hole. The complete frequency dependence in the strong-coupling limit of the Hubbard model and for the t-J model agrees with results from exact diagonalization. The limit \ensuremath{\sigma}(\ensuremath{\omega}\ensuremath{\rightarrow}0) at T=0 is found to be very different for the two models, i.e., \ensuremath{\sim}${\mathrm{\ensuremath{\omega}}}^{3/2}$ in the strong-coupling limit and \ensuremath{\sim}${\mathrm{\ensuremath{\omega}}}^{\mathrm{\ensuremath{-}}1/2}$ for the t-J model.