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Physical Review Letters

Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence of InGaAs/GaAs Quantum Well Electrons

I. A. Yugova, А. Соколова, Dmitri R. Yakovlev, A. Greilich, D. Reuter, Andreas Dirk Wieck, M. Bayer

Published Apr 23, 2009• 39 citations
Publisher

Abstract

Pulsed optical excitation of the negatively charged trion has been used to generate electron spin coherence in an n-doped (In,Ga)As/GaAs quantum well. The coherence is monitored by resonant spin amplification detected at times exceeding the trion lifetime by 2 orders of magnitude. Still, even then signatures of the hole spin dynamics in the trion complex are imprinted in the signal leading to an unusual batlike shape of the magnetic field dispersion of spin amplification. From this shape information about the spin relaxation of both electrons and holes can be derived.

DOI
10.1103/physrevlett.102.167402

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Pulsed optical excitation of the negatively charged trion has been used to generate electron spin coherence in an n-doped (In,Ga)As/GaAs quantum well. The coherence is monitored by resonant spin amplification detected at times exceeding the trion lifetime by 2 orders of magnitude. Still, even then signatures of the hole spin dynamics in the trion complex are imprinted in the signal leading to an unusual batlike shape of the magnetic field dispersion of spin amplification. From this shape information about the spin relaxation of both electrons and holes can be derived.
The carrier spin dynamics in a nnn-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.
The excitation of electron spin polarization and coherence by picosecond light pulses and their dynamics in a wide remotely doped quantum well are studied theoretically and experimentally. Assuming that all electrons in the quantum well are localized, the theory considers the resonant interaction of light pulses with the four-level system formed by the electron spins of the ground state and the hole spins of the trion excited state. The theory describes the effects of spontaneous emission, a transverse magnetic field and hole spin relaxation on the dynamics detected by the Kerr rotation of a probe pulse. Time resolved Kerr rotation experiments were carried out on a remotely doped 14nm14\phantom{\rule{0.3em}{0ex}}\mathrm{nm}14nm GaAs quantum well in the frequency range of optical transitions to the heavy hole (HH) trion and to the light-hole (LH) trion degenerate with the HH exciton. The experiments on the resonant excitation of the HH trion show a very slow heavy hole spin relaxation and, consequently, a weak electron spin polarization after the trion relaxation. In contrast, the resonant excitation of the LH trion/HH exciton results in a fast hole spin relaxation that increases electron spin polarization.
Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas is studied by picosecond pump-probe Kerr rotation. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, which decrease with increasing temperature, underlining the importance of hole localization. The mechanism of hole spin coherence generation is discussed.
The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can be used as auxiliary, powerful tools to modify the coherent optical dynamics. Here, we apply this approach to negatively charged (In,Ga)As/GaAs self-assembled quantum dots which are considered as excellent quantum emitters with robust optical coherence and high bandwidth. We study 3-pulse spin-dependent photon echoes subject to moderate transverse magnetic fields up to 1 T. We demonstrate that the timescale of coherent optical response can be extended by at least an order of magnitude by the field. Without magnetic field, the photon echo decays with T2T_ 2T2​ = 0.45 ns which is determined by the radiative lifetime of trions T1T_1T1​ = 0.27 ns. In the presence of the transverse magnetic field, the decay of the photon echo signal is given by spin dephasing time of the ensemble of resident electrons T2,eT_{2,e}T2,e​ ~ 4 ns. We demonstrate that the non-zero transverse g-factor of the heavy holes in the trion state plays a crucial role in the temporal evolution and magnetic field dependence of the long-lived photon echo signal.
Abstract The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can be used as auxiliary, powerful tools to modify the coherent optical dynamics. Here, we apply this approach to negatively charged (In,Ga)As/GaAs self-assembled quantum dots which are considered as excellent quantum emitters with robust optical coherence and high bandwidth. We study three-pulse spin-dependent photon echoes subject to moderate transverse magnetic fields up to 1 T. We demonstrate that the timescale of coherent optical response can be extended by at least an order of magnitude by the field. Without magnetic field, the photon echo decays with T2 = 0.45 ns which is determined by the radiative lifetime of trions T1 = 0.26 ns. In the presence of the transverse magnetic field, the decay of the photon echo signal is given by spin dephasing time of the ensemble of resident electrons T2,e ∼ 4 ns. We demonstrate that the non-zero transverse g-factor of the heavy holes in the trion state plays a crucial role in the temporal evolution and magnetic field dependence of the long-lived photon echo signal.
Pump‐probe time‐resolved Kerr rotation technique has been used for experimental investigation of hole spin coherence in 15‐nm wide GaAs/AlGaAs quantum well structure in regime of diluted two‐dimensional hole gas. Due to the spectral width of 1.5 ps laser pulses which correspond to ∼1 meV, selective excitation of trion and exciton states has been performed. In the case of resonant excitation of exciton only the electron spin beats have been observed in the presence of magnetic field. In the case of resonant excitation of the positively charged exciton two component decay of time‐resolved Kerr rotation (TRKR) signal appeared. From the period of the quantum beat oscillation related to long decay component (up to 650 ps) of TRKR signal we obtained in‐plain hole g‐factor of ∼0.048±0.005.