Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Radiation effects and defects in solids

Samarium doped alkaline earth halide thin films as spectrally selective materials for hole burning?

A. Monner, Marc Schnieper, Raivo Jaaniso, Hans Bill

Published Dec 1, 1995• 3 citations
Publisher

Abstract

Optical hole burning, a potential technique for spectrally selective recording, was demonstrated in Sm-doped MBE-grown thin films of CaF2/Si(111). The inhomogeneous broadening of the corresponding Sm2+ 5d(T1u) ↞ 4f(7F0, A1g) transition (690 nm) was investigated as a function of substrate temperature and film thickness. The MBE apparatus is briefly described as well as the thin film growth procedure.

DOI
10.1080/10420159508229846

Related papers

Thin Film Materials with Samarium(III) for Room Temperature Hole Burning: Design and Photomechanism Studies

Raivo Jaaniso, Tea Avarmaa, Markko Paas +3 more

Multicomponent thin films with spectral hole burning capacity at room temperature were synthesized by using molecular beam and pulsed laser deposition techniques All materials were activated by Sm2+ in low-symmetry alkaline earth sites, the synthesis involved the control of ionic diffiision rate during multilayer growth and special reduction of Samarium. Enhancement of hole burning rate by 1–2 orders is obtained in nanocrystalline films as compared to bulk and microcrystalline materials New hypothetic mechanism involving the creation of Sm-defect (photochromic) centers is proposed for reversible photoburning

Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals•May 1, 1998•2 citations

Inhomogeneous Broadening and Persistent Spectral Hole-Burning of Divalent Samarium Ions In Alkaline Earth Metal Halides

Jiahua Zhang, Xiangjun Wang, Shihua Huang +1 more

Persistent spectral hole burning (PSHB) was discovered in organic molecular system in 1974[1]. Five years later, PSHB in inorganic materials was discovered in NaF by R. M. Macfarlane et al [2]. In 1985, A. Winnacker et al [3] first observed photon gated spectral hole burning in BaFCl: Sm2+ at 2K. Hole burning(HB) is useful in high resolution spectroscopy. It is also of crucial importance for the application to frequency domain optical storage. The storage density is proportional to the ratio of inhomogeneous linewidth(Γi) to the homogeneous linewidth(Γh), N(= Γi/Γh). The inhomogeneous linewidth of 5D0-TF0 transition of Sm2+ is 16GHz and the hole width is 25MHz in BaFCl at 2K[3]. For this material, the inhomogeneous linewidth changes only moderately with the temperature; On the other hand, the homogeneous linewidth increases rapidly as the temperature rises. Then, a small value of N(~2) can be estimated when HB temperature is raised to 77K. That means, it is difficult to burn a hloe in the inhomogeneous line in BaFCl:Sm2+ at 77K. To maintain a reasonable storage capacity or to study HB at a quite high temperature, a large inhomogeneous linewidth is in great request.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1991•0 citations

High-temperature spectral hole burning on samarium(II) in single crystals of the lead fluorohalide structure family and in thin films of calcium fluoride

Hans Bill, Raivo Jaaniso, Hans R. Hagemann +3 more

When modern spectral hole burning applications for high-density information storage under noncryogenic temperatures are envisioned, it is necessary to develop new frequency-selective photoactive materials for this purpose. Mixed compounds of the PbFCI family, doped with samarium (II) ions, exhibit promising and true room-temperature hole burning capabilities. We investigate this class of systems (and related ones) by combining material synthesis and high-resolution spectroscopy. Whole groups of isomorphous crystals were synthesized with varying degrees of halide anion and/or cation substitutions. Thin films of fluoride-based materials were made in a laboratory-built molecular beam epitaxy system. An extended x-ray study, differential thermal analysis, luminescence, and Raman measurements allowed the characterization of the materials. Formal models were developed for both the inhomogeneous zero-phonon optical line shapes of the Samarium (II) and the time evolution of hole burning.

Optical Engineering•Aug 1, 1995•30 citations

Inhomogeneous Line Broadening, Fluorescence Line Narrowing and Persistent Spectral Hole Burning of Divalent Samarium Ions

Jia Zhang

Spectral hole burning acting as a high resolution spectroscopic technique has potential applications on high density optical storage. The present paper report the research results on inhomogeneous broadening, fluorescence line narrowing, high temperature persistent spectral hole burning, mechanism of hole burning, hole burning dynamics and thermal stability of spectral holes. We designed and prepared new material system of divalent samarium ion doped alkaline earth metal fluoridehalides for high temperature hole burning. Room temperature hole burning and spectral hole with longer lifetime were performed. Various local configurations were distinguished by using time resolved spectroscopy. Spectral redistribution induced by hole burning indicates that trivalent samarium ions act as electron traps. Hole burning dynamics was analyzesed by using Block theory.

Chinese Journal of Luminescence•Jan 1, 2003•0 citations

Thin films of sulfides for high-density optical storage by photon-gated hole burning

Mohamed F. Aly, Levent Biyikli, Sameh I. Dardona +2 more

In the form of micro-particles europium doped alkaline earth sulfides have been shown to exhibit high density of permanent spectral holes. The photon-gated spectral holeburning (PGHB) in these systems provided the most promising characteristics of any material known to date. These spectral holes can be used as optical memory. However, for any optical storage device either large size single crystals or thin films are required. Thin films of these materials are grown by Pulsed Laser Deposition (PLD) technique. This fast and simple growth technique is superior the single crystal growth or the molecular beam epitaxy (MBE) as far as the holeburning properties are concerned. Transparent glassy MgS:Eu and CaS:Eu films have been grown and tested for the spectral holeburning properties. Critical parameters such as the relative concentration of Eu2+ and Eu3+, and optical quality of thin films have been investigated. Int his paper we report on the growth and the high-density optical holeburning in these films. The density of spectral holes has been further increased by burning in multiple Eu-centers in a material and by depositing multiple layers of thin films of different materials in a stack.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 29, 2000•2 citations

Room-temperature persistent spectral hole burning in SrFCl:Sm2+ films: Temporal and spatial response

Marc Schnieper, F. Trotta, S. Bersier +1 more

Persistent spectral hole burning was performed on the 7F0–5D1 transition of Sm2+ in thin films of SrFCl. Depending on the substrate and the growth conditions, a total hole depth between 47% and 70% was reached. The holes were Lorentzians of width 4(±0.3) cm−1. The time evolution of the hole depth was studied. It is described by two exponentials: a short time decay (t1=0.37 days) and a long time decay (t2=20.4 days) with a 20% infinite time limit. One- and two-photon burning mechanisms act.

Applied Physics Letters•Jul 5, 1999•10 citations
Optical hole burning, a potential technique for spectrally selective recording, was demonstrated in Sm-doped MBE-grown thin films of CaF2/Si(111). The inhomogeneous broadening of the corresponding Sm2+ 5d(T1u) ↞ 4f(7F0, A1g) transition (690 nm) was investigated as a function of substrate temperature and film thickness. The MBE apparatus is briefly described as well as the thin film growth procedure.
Multicomponent thin films with spectral hole burning capacity at room temperature were synthesized by using molecular beam and pulsed laser deposition techniques All materials were activated by Sm2+ in low-symmetry alkaline earth sites, the synthesis involved the control of ionic diffiision rate during multilayer growth and special reduction of Samarium. Enhancement of hole burning rate by 1–2 orders is obtained in nanocrystalline films as compared to bulk and microcrystalline materials New hypothetic mechanism involving the creation of Sm-defect (photochromic) centers is proposed for reversible photoburning
Persistent spectral hole burning (PSHB) was discovered in organic molecular system in 1974[1]. Five years later, PSHB in inorganic materials was discovered in NaF by R. M. Macfarlane et al [2]. In 1985, A. Winnacker et al [3] first observed photon gated spectral hole burning in BaFCl: Sm2+ at 2K. Hole burning(HB) is useful in high resolution spectroscopy. It is also of crucial importance for the application to frequency domain optical storage. The storage density is proportional to the ratio of inhomogeneous linewidth(Γi) to the homogeneous linewidth(Γh), N(= Γi/Γh). The inhomogeneous linewidth of 5D0-TF0 transition of Sm2+ is 16GHz and the hole width is 25MHz in BaFCl at 2K[3]. For this material, the inhomogeneous linewidth changes only moderately with the temperature; On the other hand, the homogeneous linewidth increases rapidly as the temperature rises. Then, a small value of N(~2) can be estimated when HB temperature is raised to 77K. That means, it is difficult to burn a hloe in the inhomogeneous line in BaFCl:Sm2+ at 77K. To maintain a reasonable storage capacity or to study HB at a quite high temperature, a large inhomogeneous linewidth is in great request.
When modern spectral hole burning applications for high-density information storage under noncryogenic temperatures are envisioned, it is necessary to develop new frequency-selective photoactive materials for this purpose. Mixed compounds of the PbFCI family, doped with samarium (II) ions, exhibit promising and true room-temperature hole burning capabilities. We investigate this class of systems (and related ones) by combining material synthesis and high-resolution spectroscopy. Whole groups of isomorphous crystals were synthesized with varying degrees of halide anion and/or cation substitutions. Thin films of fluoride-based materials were made in a laboratory-built molecular beam epitaxy system. An extended x-ray study, differential thermal analysis, luminescence, and Raman measurements allowed the characterization of the materials. Formal models were developed for both the inhomogeneous zero-phonon optical line shapes of the Samarium (II) and the time evolution of hole burning.
Spectral hole burning acting as a high resolution spectroscopic technique has potential applications on high density optical storage. The present paper report the research results on inhomogeneous broadening, fluorescence line narrowing, high temperature persistent spectral hole burning, mechanism of hole burning, hole burning dynamics and thermal stability of spectral holes. We designed and prepared new material system of divalent samarium ion doped alkaline earth metal fluoridehalides for high temperature hole burning. Room temperature hole burning and spectral hole with longer lifetime were performed. Various local configurations were distinguished by using time resolved spectroscopy. Spectral redistribution induced by hole burning indicates that trivalent samarium ions act as electron traps. Hole burning dynamics was analyzesed by using Block theory.
In the form of micro-particles europium doped alkaline earth sulfides have been shown to exhibit high density of permanent spectral holes. The photon-gated spectral holeburning (PGHB) in these systems provided the most promising characteristics of any material known to date. These spectral holes can be used as optical memory. However, for any optical storage device either large size single crystals or thin films are required. Thin films of these materials are grown by Pulsed Laser Deposition (PLD) technique. This fast and simple growth technique is superior the single crystal growth or the molecular beam epitaxy (MBE) as far as the holeburning properties are concerned. Transparent glassy MgS:Eu and CaS:Eu films have been grown and tested for the spectral holeburning properties. Critical parameters such as the relative concentration of Eu2+ and Eu3+, and optical quality of thin films have been investigated. Int his paper we report on the growth and the high-density optical holeburning in these films. The density of spectral holes has been further increased by burning in multiple Eu-centers in a material and by depositing multiple layers of thin films of different materials in a stack.