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Journal of Crystal Growth

Thermally induced optical bistability in II–VI semiconductor crystals and thin films

A. Schmidt, Marius Müller, J. Grohs, M. Kunz, A. Daunois, V. Kažukauskas, Ajoy Kumar Kar, Hartmut O. Bartelt, Claus F. Klingshirn

Published Apr 1, 1990• 14 citations
Publisher
DOI
10.1016/0022-0248(90)91075-2

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Ternary II-VI semiconductors, like CdSxSe1-x or ZnxCd1-xS, were prepared by thermal evaporation of binary semiconductors from a double source. The influence of substrate temperature during thin film deposition and of thermal annealing in argon atmosphere on absorption edge steepness is studied. A high absorption edge steepness is advantageous to achieve large resonant optical nonlinearities, like absorption bistability and electronic nonlinearities. The position of the absorption edge can be tuned by choosing a proper film composition. Thermally induced optical bistability is demonstrated. Electronic nonlinearities are investigated in ns- and ps-pump-probe experiments. Fast bleaching with < 60 ps relaxation time is observed at the absorption edge. The maximum bleaching coefficient for CdS0.69Se0.31 films is 1.4 cm/kW at (lambda) equals 587 nm for pumping with (lambda) equals 377 nm. Annealing the films showed no effect on the relaxation time, but the bleaching coefficient was increased by a factor of five.