We show that a low-intensity femtosecond pulse is severely distorted while propagating through a relatively thin (\ensuremath{\approxeq}6300 \AA{}) GaAs multiple-quantum-well sample near the exciton resonance at low temperatures. This pulse distortion depends critically on the dephasing time
T2, the total thickness l, detuning, and inhomogeneous broadening. In thinner, high-quality samples (l3000 \AA{}, exciton linewidth 1 meV), the distortion is smaller and free-induction-decay-like. An interferometric measurement reveals the existence of well-defined nodes at which the envelope function changes its sign, demonstrating that the source of the pulse distortion is the reradiation of the induced dipoles. While the effects of this pulse distortion on pump-probe or four-wave-mixing experiments are relatively small for samples with l3000 \AA{}, samples with l>6000 \AA{} are strongly affected.
Propagation of light pulses in wide-gap semiconductors, GaN and ZnO, has been studied by time-of-flight spectroscopy. It has been demonstrated that significant light delay exists near an exciton resonance and that this delay is accompanied by pulse distortion and attenuation. Simulation of the pulse shape in the time-energy plane has permitted us to refine excitonic parameters inherent for bulk materials. The time-of-flight studies done over a wide temperature range demonstrate the strong influence of resonant scattering by phonons on the light delay in polar semiconductors. Optical dispersion at exciton resonances in semiconductors results in a delay of light transfer, which is induced by the variation of the group velocity — a phenomenon studied long ago(1-3). Thisdelayhasbeenobservedbytime-of-flightspec- troscopy in different semiconductors (4-6). The current inter- estinsuchretardationisenhancedbecauseitisoneoftheways toobtaintheso-calledslowlight,whichisneededforoptical communication and data processing. Wide-gap semiconduc- tors, like ZnO and GaN, possess strong excitonic resonances thatmakesthemsuitableforsuchapplication. Lightvelocities as low as 6000 km/s in ZnO (4) and 2100 km/s in GaN (5) have been recently measured. In view of these findings, the distortion of a pulse shape has attracted special attention (7). It is worth mentioning that early experiments showed no sig- nificant changes in the shape of a light pulse at the excitonic resonances in GaAs (8) and GaP (9), while the optical dis- persion near the resonances implies a different group velocity and attenuation for the higher- and lower-energy edges of the pulses (10), that inevitably means their distortion in the time- energy plane. The optical pulse modification is also important for a set of optoelectronic devices — high-frequency ones or those, where the light should propagate a long distance. The
We perform femtosecond spectrally resolved pump-probe differential reflectivity measurements on excitons in GaAs quantum wells in both coherent and incoherent regimes. The spectral signal is nonzero and oscillatory at $\ensuremath{-}\mathrm{ve}$ delay up to a few ps indicating persistent coherence between excitonic polarization induced by the probe pulse and the delayed pump pulse. The signal for small
+ve and $\ensuremath{-}\mathrm{ve}$ delay $(\ensuremath{\tau})$ shows modulation caused by quantum beats due to coexcitation of heavy and light hole excitons. The rise of the signal with $\ensuremath{\tau}$ for $\ensuremath{\tau}<0$ is rather nonexponential and is sensitive to detuning of the detection energy with respect to the exciton energy. The signal decay with $\ensuremath{\tau}$ for small
+ve $\ensuremath{\tau}$ shows dependence on pump-probe relative polarization. The excitonic reflectivity shows a large reduction caused by excitonic absorption saturation for both
+ve and $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}$ when the pump pulse intensity is increased to large values. To compare the experimental results with theory, we obtain an expression for the PPDR signal in terms of the third order excitonic polarization. This has an additional term not considered earlier to describe pump-probe experiments. The calculations are performed using optical Bloch equations, modified to incorporate exciton inhomogeneous broadening, quantum beats, and many body effects such as local field, excitation induced energy shift, and dephasing. These effects are found essential in explaining the observed PPDR spectral data. The delay dependence of the signal near the exciton energy is mainly controlled by inhomogeneous broadening for $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}.$ The signal decay for large
+ve $\ensuremath{\tau}$ has an exponential behavior determined by the lifetime of incoherent excitons. Experiments for collinear polarization reveal an additional exponential component for small
+ve delay. Theoretically, this is found to be related to exciton dephasing and is present only when many body effects are included.
Pulse time-of-flight measurements at the heavy exciton resonance in GaAs quantum wells reveal large pulse delays which are dependent on intensity and pulse spectral width. The measured pulse velocities are comparable to those seen in bulk GaAs and are as low as 6.7\ifmmode\times\else\texttimes\fi{}
106cm${\mathrm{s}}^{\ensuremath{-}1}$. We obtain quantitative agreement with a simple theory based on hole burning observed in the inhomogeneous exciton line, and we show that the measurements are useful in estimating exciton damping, under certain conditions.
Recent studies of the transient behavior of absorption saturation in low temperature Multiple Quantum Wells (MQW) samples have revealed a surprisingly fast recovery of absorption (within 10 ps at 15 K) after excitation by intense ultrashort light pulses1. This has been attributed to the effect of the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW structure, as confirmed by streak camera observations of the edge-emitted luminescence1, and by measurements of time-resolved luminescence spectra with subpicosecond resolution2. This effect could be used to increase the speed of optical gates based on absorption saturation or carrier-induced nonlinear refraction, but a more complete understanding of the mechanisms involved is clearly needed in order to evaluate the interest of this approach.
We present the detailed experimental results of the time-resolved nonlinear luminescence of excitons in undoped GaAs-AlAs quantum wells. The observed nonlinearity results from the saturation in luminescence originated from the phase space filling and exchange effects of carriers. In some temporal profiles of nonlinear luminescence, anomalous anti-correlation profile has been observed. The origin of anti-correlation is ascribed to be the finite rise time of the exciton population at the luminescent tail state in the exciton band.