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Physical review. B, Condensed matter

Effect of dilution on phase transitions in a transverse Ising model

V. K. Saxena

Published Jun 1, 1983• 46 citations
Publisher

Abstract

The effect of random bond (site) dilution on the phase transition of a three-dimensional transverse Ising model is studied by a cluster variation, along with perturbation expansion method. Complete phase diagrams in the temperature-concentration-transverse-field space are constructed for both the cases. The value of critical transverse field as a function of concentration, at zero temperature, exhibits a discontinuity at the critical value of concentration for the existence of phase transition, as conjectured by Harris. As is expected for the existence of a second-order phase transition, the static susceptibility diverges on the critical surface.

DOI
10.1103/physrevb.27.6884

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Journal of Physics C Solid State Physics•Dec 7, 1974•22 citations
The effect of random bond (site) dilution on the phase transition of a three-dimensional transverse Ising model is studied by a cluster variation, along with perturbation expansion method. Complete phase diagrams in the temperature-concentration-transverse-field space are constructed for both the cases. The value of critical transverse field as a function of concentration, at zero temperature, exhibits a discontinuity at the critical value of concentration for the existence of phase transition, as conjectured by Harris. As is expected for the existence of a second-order phase transition, the static susceptibility diverges on the critical surface.
Recently, there has been interest in the problems of disorder in the Ising model in a transverse field, which may apply to DKDP-KDP mixed systems and diluted vanadates. The site and bond diluted transverse Ising models have already been studied using Green's function techniques along with the coherent potential approximation. However, the situation as regards to the existence of a second order phase transition and the divergence of the static susceptibility is not very clear. In the present paper, a spin ½ Ising model in a transverse field and random bond (site) dilution is studied by variational cluster and perturbation expansion method. The critical temperature for the existence of a second order phase transition is calculated as a function of concentration of bonds (spins) and the transverse field. Variation of the critical concentration, for the existence of phase transition, is studied as a function of the transverse field. A phase diagram in the temperature-concentration-transverse field space is constructed. The static susceptibility is calculated and is found to diverge at the critical temperature, as is expected for the existence of a second order phase transition.
Abstract Within effective field theory (EFT), the critical properties of a random transverse crystal field Ising model with bond dilution are studied on a square lattice. Under both weak and strong bond dilution conditions, we consider three cases (α = 0,±0.5) of a transverse crystal field ratio, obtaining global phase diagrams in T−D x space for changes in the random transverse crystal field concentration. The phase diagrams obtained for a weak bond dilution are very similar in shape to those of pure bond but with decreases in corresponding ordered phases and critical values. However, the phase diagrams for a strong bond dilution exhibit varieties, including a change in reentrant phenomenon, the occurrence of transverse crystal field degeneration, and the opposite direction crossover of temperature peak value.
The effect of a random transverse field on the phase transitions of a ferromagnetic spin 1/2 Ising film is investigated within a finite cluster approximation with an expansion technique for the cluster identities of spin 1/2 systems. The phase diagrams are determined as a function of the transverse field for different values of the concentration p of the disorder of the latter. It is found that at very low temperatures the ferromagnetic order is destroyed under the effect of the transverse field only if the concentration is larger than a critical value pc, which is independent of the film thickness.