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Annals of Physics

Zero finite-temperature charge stiffness within the half-filled 1D Hubbard model

J. M. P. Carmelo, Shi-Jian Gu, Pedro D Sacramento

Published Oct 7, 2013• 18 citations
Publisher
DOI
10.1016/j.aop.2013.09.020

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Absence of finite-temperature ballistic charge (and spin) transport in the 1D Hubbard model at half filling (and zero spin density)

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Finite-temperature T > 0 transport properties of integrable and nonintegrable one-dimensional (1D) many-particle quantum systems are rather different, showing ballistic and diffusive behavior, respectively. The repulsive 1D Hubbard model is a prominent example of an integrable correlated system. For electronic densities n ≠ 1 (and spin densities m ≠ 0) it is an ideal charge (and spin) conductor, with ballistic charge (and spin) transport for T ⩾ 0. In spite of the fact that it is solvable by the Bethe ansatz, at n = 1 (and m = 0) its T > 0 charge (and spin) transport properties are an issue that remains poorly understood. Here we combine this solution with symmetry and the explicit calculation of current-operator matrix elements between energy eigenstates to show that for on-site repulsion U > 0 and at n = 1 the charge stiffness D η ( T ) vanishes for T > 0 in the thermodynamic limit. A similar behavior is found by such methods for the spin stiffness D s ( T ) for U > 0 and T > 0, which vanishes at m = 0. This absence of finite temperature n = 1 ballistic charge transport and m = 0 ballistic spin transport are exact results that clarify long-standing open problems.

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J. M. P. Carmelo, Somayyeh Nemati, Tomaž Prosen

Whether in the thermodynamic limit of lattice length L→∞, hole concentration mηz=−2Sηz/L=1−ne→0, nonzero temperature T>0, and U/t>0 the charge stiffness of the 1D Hubbard model with first neighbor transfer integral t and on-site repulsion U is finite or vanishes and thus whether there is or there is no ballistic charge transport, respectively, remains an unsolved and controversial issue, as different approaches yield contradictory results. (Here Sηz=−(L−Ne)/2 is the η-spin projection and ne=Ne/L the electronic density.) In this paper we provide an upper bound on the charge stiffness and show that (similarly as at zero temperature), for T>0 and U/t>0 it vanishes for mηz→0 within the canonical ensemble in the thermodynamic limit L→∞. Moreover, we show that at high temperature T→∞ the charge stiffness vanishes as well within the grand-canonical ensemble for L→∞ and chemical potential μ→μu where (μ−μu)≥0 and 2μu is the Mott–Hubbard gap. The lack of charge ballistic transport indicates that charge transport at finite temperatures is dominated by a diffusive contribution. Our scheme uses a suitable exact representation of the electrons in terms of rotated electrons for which the numbers of singly occupied and doubly occupied lattice sites are good quantum numbers for U/t>0. In contrast to often less controllable numerical studies, the use of such a representation reveals the carriers that couple to the charge probes and provides useful physical information on the microscopic processes behind the exotic charge transport properties of the 1D electronic correlated system under study.

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Absence of finite-temperature ballistic charge transport in the 1D half-filled Hubbard model

J. M. P. Carmelo, Shi-Jian Gu

Finite-temperature T>0 transport properties of integrable and nonintegrable one-dimensional (1D) many-particle quantum systems are rather different, showing in the metallic phases ballistic and diffusive behavior, respectively. The repulsive 1D Hubbard model is an integrable system of wide physical interest. For electronic densities $n\neq1$ it is an ideal conductor, with ballistic charge transport for T larger or equal to 0. In spite that it is solvable by the Bethe ansatz, at $n=1$ its T>0 transport properties are a collective-behavior issue that remains poorly understood. Here we combine that solution with symmetry to show that for on-site repulsion U>0 the charge stiffness D (T) vanishes for T>0 in the thermodynamic limit. This absence of finite-temperature ballistic charge transport is an exact result that clarifies a long-standing open problem.

arXiv:1209.1276•Sep 6, 2012•0 citations

Static Properties of the Half-Filled Band Hubbard Model

Dario Cabib, T. A. Kaplan, Hugh C. Wolfe +2 more

AIP conference proceedings•Jan 1, 1973•3 citations
Finite-temperature T > 0 transport properties of integrable and nonintegrable one-dimensional (1D) many-particle quantum systems are rather different, showing ballistic and diffusive behavior, respectively. The repulsive 1D Hubbard model is a prominent example of an integrable correlated system. For electronic densities n ≠ 1 (and spin densities m ≠ 0) it is an ideal charge (and spin) conductor, with ballistic charge (and spin) transport for T ⩾ 0. In spite of the fact that it is solvable by the Bethe ansatz, at n = 1 (and m = 0) its T > 0 charge (and spin) transport properties are an issue that remains poorly understood. Here we combine this solution with symmetry and the explicit calculation of current-operator matrix elements between energy eigenstates to show that for on-site repulsion U > 0 and at n = 1 the charge stiffness D η ( T ) vanishes for T > 0 in the thermodynamic limit. A similar behavior is found by such methods for the spin stiffness D s ( T ) for U > 0 and T > 0, which vanishes at m = 0. This absence of finite temperature n = 1 ballistic charge transport and m = 0 ballistic spin transport are exact results that clarify long-standing open problems.
Whether in the thermodynamic limit of lattice length L→∞, hole concentration mηz=−2Sηz/L=1−ne→0, nonzero temperature T>0, and U/t>0 the charge stiffness of the 1D Hubbard model with first neighbor transfer integral t and on-site repulsion U is finite or vanishes and thus whether there is or there is no ballistic charge transport, respectively, remains an unsolved and controversial issue, as different approaches yield contradictory results. (Here Sηz=−(L−Ne)/2 is the η-spin projection and ne=Ne/L the electronic density.) In this paper we provide an upper bound on the charge stiffness and show that (similarly as at zero temperature), for T>0 and U/t>0 it vanishes for mηz→0 within the canonical ensemble in the thermodynamic limit L→∞. Moreover, we show that at high temperature T→∞ the charge stiffness vanishes as well within the grand-canonical ensemble for L→∞ and chemical potential μ→μu where (μ−μu)≥0 and 2μu is the Mott–Hubbard gap. The lack of charge ballistic transport indicates that charge transport at finite temperatures is dominated by a diffusive contribution. Our scheme uses a suitable exact representation of the electrons in terms of rotated electrons for which the numbers of singly occupied and doubly occupied lattice sites are good quantum numbers for U/t>0. In contrast to often less controllable numerical studies, the use of such a representation reveals the carriers that couple to the charge probes and provides useful physical information on the microscopic processes behind the exotic charge transport properties of the 1D electronic correlated system under study.
Finite-temperature T>0 transport properties of integrable and nonintegrable one-dimensional (1D) many-particle quantum systems are rather different, showing in the metallic phases ballistic and diffusive behavior, respectively. The repulsive 1D Hubbard model is an integrable system of wide physical interest. For electronic densities n≠1n\neq1n=1 it is an ideal conductor, with ballistic charge transport for T larger or equal to 0. In spite that it is solvable by the Bethe ansatz, at n=1n=1n=1 its T>0 transport properties are a collective-behavior issue that remains poorly understood. Here we combine that solution with symmetry to show that for on-site repulsion U>0 the charge stiffness D (T) vanishes for T>0 in the thermodynamic limit. This absence of finite-temperature ballistic charge transport is an exact result that clarifies a long-standing open problem.