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Applied Physics Letters

High-speed switching of spin polarization for proposed spin-photon memory

Vadym Zayets, Koji Ando

Published Mar 23, 2009• 9 citations
Publisher

Abstract

Nonvolatile high-speed optical memory is proposed, which utilizes the magnetization reversal of nanomagnet by spin-polarized photoexcited electrons. It was demonstrated experimentally that one selected pulse from the train of two optical data pulses with interval of 450 fs can solely excite the spin-polarized electrons without a disturbance from the unselected optical data pulse. That proves feasibility for operation of the memory with speed of 2.2 Tbits/s.

DOI
10.1063/1.3106637

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Nonvolatile high-speed optical memory is proposed, which utilizes the magnetization reversal of nanomagnet by spin-polarized photoexcited electrons. It was demonstrated experimentally that one selected pulse from the train of two optical data pulses with interval of 450 fs can solely excite the spin-polarized electrons without a disturbance from the unselected optical data pulse. That proves feasibility for operation of the memory with speed of 2.2 Tbits/s.
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Summary form only given. We describe a novel optically-addressed coherent polarization switch that is based on the non-resonant excitation of spin-polarized "virtual excitons" in unstrained MQWs. By operating near (but below) resonance, we achieve nonlinearities that approach the magnitudes of those that can be obtained with resonant excitation, yet we are able to avoid the restrictions that accompany carrier generation, and we take advantage of speeds that are characteristic of non-resonant excitation. Consequently, our device exhibits a pulse-width-limited response that is determined solely by the length of the control and signal pulses and produces large contrast ratios in thin MQW samples.