Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of the Physical Society of Japan

Correlation Strength Crossover of Auger Recombination in One-Dimensional Mott Insulators

Hiroki Gomi, Hisashi Hatano, Takeshi J. Inagaki, Akira Takahashi

Published Aug 26, 2014• 3 citations
Publisher

Abstract

We theoretically investigate the relaxation of photogenerated charge carriers in one-dimensional Mott insulators. We adopt the Pariser–Parr–Pople model, and numerically calculate the time development of the nonequilibrium state excited by a weak light pulse. We investigate the dependence of the dynamics on the Coulomb correlation strength in the case where the binding effect between photogenerated opposite charges is significant. In the strong-correlation region (\(U \gg W\)), where U is the onsite Coulomb interaction energy and W is the bandwidth, the Auger recombination where two bound holon–doublon pairs decay into one unbound holon–doublon pair dominates the decay dynamics. From the strong- to intermediate (\(U \simeq W\))-correlation regions, the Auger recombination is always dominant, but the charge carriers involved in the process cannot be described by a holon and a doublon in the intermediate-correlation region. In the crossover region between these two regions, the Auger coefficient is strongly enhanced, and the decay time constant is consistent with those obtained in recent experiments.

DOI
10.7566/jpsj.83.094718

Related papers

Auger Recombination of Photogenerated Charges in One-Dimensional Mott Insulators

Mami Segawa, Akira Takahashi, Hiroki Gomi +1 more

We theoretically investigate the dynamics of photoexcited states in one-dimensional Mott insulators. We adopt the Pariser–Parr–Pople model, and numerically calculate the time development of the nonequilibrium state excited by a light pulse. In the weaker light excitation case where the maximum photoexcitation density is below about 18%, the charge carriers in the photoexcited states are holons and doublons, and the geminate recombination of bound doublon–holon pairs, namely, the Auger recombination process dominates the decay of the photogenerated holons and doublons with the realistic Coulomb parameters. In the stronger light excitation case where the density is above the value, the charge carriers of the photoexcited states cannot be described by holons and doublons. As a result, the Auger recombination process of doublon–holon pairs is not the main decay route of the photogenerated charges. Furthermore, the spin and the charge degrees of freedom are coupled, and spin relaxation occurs in the photoexcited states. As the density of the photogenerated charge carriers becomes larger, the decay time decreases. This tendency is consistent with experiments.

Journal of the Physical Society of Japan•Aug 15, 2011•8 citations

Dynamics of photoinduced insulator-metal transition in one-dimensional Mott insulators

Akira Takahashi

We theoretically investigate the dynamics of insulator-metal transition induced by light-pulse excitation in one-dimensional (1D) and two-dimensional (2D) Mott insulators. We adopt the Pariser-Parr-Pople model, and pump-probe signal is obtained by numerically calculating the time development of the state excited by a light pulse. In the 1D case, when photoexcitation density is below about 10%, an extremely small portion of the energy eigenstates dominates the optical process, and the spin-charge separation holds in these dominant energy eigenstates. As a result, the Mott gap and the short-range antiferromagnetic (AF) spin order are preserved, and the spin relaxation does not occur. When the density is above the value, a metallic state without the Mott gap is photogenerated, and the magnitude of the short-range AF spin order is significantly reduced by photoexcitation. This is consistent with the experimentally observed photoinduced Mott transition. Furthermore, the spin relaxation occurs in the metallic state. This photoinduced Mott transition is a manifestation of the spin-charge coupling in the intensely photoexcited states. In the 2D case, the spin and the charge degrees of freedom are coupled even in the weakly photoexcited states, and the characteristic crossover associated with the excitation density is not observed.

Journal of Physics Conference Series•Feb 1, 2009•0 citations

Photoinduced insulator-metal transition in one-dimensional Mott insulators

Akira Takahashi, Hisashi Itoh, Masaki Aihara

We theoretically investigate the dynamics of insulator-metal transition induced by light-pulse excitation in one-dimensional Mott insulators. We adopt the Pariser--Parr--Pople model and the pump-probe signal is obtained by numerically calculating the time development of the state excited by light pulse. When the photoexcitation density is below about 10%, an extremely small portion of the energy eigenstates dominates the optical process and the spin-charge separation holds in these dominant energy eigenstates. As a result, the Mott gap and the short-range antiferromagnetic (AF) spin order are preserved and spin relaxation does not occur. When the density is above the value, a metallic state without the Mott gap is photogenerated and the magnitude of the short-range AF spin order is significantly reduced by photoexcitation. This is consistent with the experimentally observed photoinduced Mott transition. Furthermore, spin relaxation occurs in the metallic state. This photoinduced Mott transition is a manifestation of the spin-charge coupling in the intensely photoexcited states.

Physical Review B•May 13, 2008•62 citations

Disorder effects on relaxation of photoinduced metallic phase in one-dimensional Mott insulators

Mami Segawa, Akira Takahashi, Masaki Aihara

We theoretically investigate the effect of static disorder on the dynamics of photoexcited states in one-dimensional Mott insulators. We numerically calculate the time development of the state excited by a light pulse in the Pariser-Parr-Pople model, where disorder is introduced in the site energy and the transfer integral. In the weaker excitation case, the spin-charge coupling is induced by the disorder in the transfer integral. The effects of the disorder in the site energy on the spin-charge coupling are much weaker than those in the transfer integral. In the stronger excitation case, the spin and the charge degrees of freedom are coupled in the photoexcited states even in regular systems. The spin relaxations are enhanced by the disorders, and there are no significant differences in the effects of disorders on the spin relaxations between these two kinds of disorders.

Journal of Physics Conference Series•Feb 1, 2009•1 citation

Charge recombination in undoped cuprates

Zala Lenarčič, Peter Prelovšek

We theoretically analyze the process of charge recombination in the planar Mott-Hubbard insulators with the aim to explain the short picosecond-range lifetimes of photoexcited carriers, experimentally studied via pump-probe experiments on the undoped cuprates. The recombination mechanism consists of two essential ingredients: the formation of a metastable $s$-type bound holon-doublon pair, i.e., the Mott exciton, and the decay of such an excitonic state via the multimagnon emission. In spite of the large gap that requires many bosons to be emitted, the latter process is fast due to a large exchange scale and strong charge-spin coupling in planar systems. As the starting microscopic model we consider the single-band Hubbard model and then a more realistic three-band model for cuprates, both leading to the same minimal one. The decay rate of the exciton is evaluated numerically via the Fermi golden rule, having consistency also with the direct time-evolution calculation. The decay rate reveals exponential dependence on the ratio of the Mott-Hubbard gap and the exchange coupling, the result qualitatively reproduced also within a toy exciton-boson model.

arXiv:1409.2347•Physical Review B•Dec 22, 2014•46 citations

Ultrafast Charge Recombination in a Photoexcited Mott-Hubbard Insulator

Zala Lenarčič, Peter Prelovšek

We present a calculation of the recombination rate of the excited holon-doublon pairs based on the two-dimensional model relevant for undoped cuprates, which shows that fast processes, observed in pump-probe experiments on Mott-Hubbard insulators in the picosecond range, can be explained even quantitatively with the multimagnon emission. The precondition is the existence of the Mott-Hubbard bound exciton of the s-type. We find that its decay is exponentially dependent on the Mott-Hubbard gap and on the magnon energy, with a small prefactor, which can be traced back to strong correlations and consequently large exciton-magnon coupling.

arXiv:1211.3236•Physical Review Letters•Jul 2, 2013•96 citations
We theoretically investigate the relaxation of photogenerated charge carriers in one-dimensional Mott insulators. We adopt the Pariser–Parr–Pople model, and numerically calculate the time development of the nonequilibrium state excited by a weak light pulse. We investigate the dependence of the dynamics on the Coulomb correlation strength in the case where the binding effect between photogenerated opposite charges is significant. In the strong-correlation region ((U \gg W)), where U is the onsite Coulomb interaction energy and W is the bandwidth, the Auger recombination where two bound holon–doublon pairs decay into one unbound holon–doublon pair dominates the decay dynamics. From the strong- to intermediate ((U \simeq W))-correlation regions, the Auger recombination is always dominant, but the charge carriers involved in the process cannot be described by a holon and a doublon in the intermediate-correlation region. In the crossover region between these two regions, the Auger coefficient is strongly enhanced, and the decay time constant is consistent with those obtained in recent experiments.
We theoretically investigate the dynamics of photoexcited states in one-dimensional Mott insulators. We adopt the Pariser–Parr–Pople model, and numerically calculate the time development of the nonequilibrium state excited by a light pulse. In the weaker light excitation case where the maximum photoexcitation density is below about 18%, the charge carriers in the photoexcited states are holons and doublons, and the geminate recombination of bound doublon–holon pairs, namely, the Auger recombination process dominates the decay of the photogenerated holons and doublons with the realistic Coulomb parameters. In the stronger light excitation case where the density is above the value, the charge carriers of the photoexcited states cannot be described by holons and doublons. As a result, the Auger recombination process of doublon–holon pairs is not the main decay route of the photogenerated charges. Furthermore, the spin and the charge degrees of freedom are coupled, and spin relaxation occurs in the photoexcited states. As the density of the photogenerated charge carriers becomes larger, the decay time decreases. This tendency is consistent with experiments.
We theoretically investigate the dynamics of insulator-metal transition induced by light-pulse excitation in one-dimensional (1D) and two-dimensional (2D) Mott insulators. We adopt the Pariser-Parr-Pople model, and pump-probe signal is obtained by numerically calculating the time development of the state excited by a light pulse. In the 1D case, when photoexcitation density is below about 10%, an extremely small portion of the energy eigenstates dominates the optical process, and the spin-charge separation holds in these dominant energy eigenstates. As a result, the Mott gap and the short-range antiferromagnetic (AF) spin order are preserved, and the spin relaxation does not occur. When the density is above the value, a metallic state without the Mott gap is photogenerated, and the magnitude of the short-range AF spin order is significantly reduced by photoexcitation. This is consistent with the experimentally observed photoinduced Mott transition. Furthermore, the spin relaxation occurs in the metallic state. This photoinduced Mott transition is a manifestation of the spin-charge coupling in the intensely photoexcited states. In the 2D case, the spin and the charge degrees of freedom are coupled even in the weakly photoexcited states, and the characteristic crossover associated with the excitation density is not observed.
We theoretically investigate the dynamics of insulator-metal transition induced by light-pulse excitation in one-dimensional Mott insulators. We adopt the Pariser--Parr--Pople model and the pump-probe signal is obtained by numerically calculating the time development of the state excited by light pulse. When the photoexcitation density is below about 10%, an extremely small portion of the energy eigenstates dominates the optical process and the spin-charge separation holds in these dominant energy eigenstates. As a result, the Mott gap and the short-range antiferromagnetic (AF) spin order are preserved and spin relaxation does not occur. When the density is above the value, a metallic state without the Mott gap is photogenerated and the magnitude of the short-range AF spin order is significantly reduced by photoexcitation. This is consistent with the experimentally observed photoinduced Mott transition. Furthermore, spin relaxation occurs in the metallic state. This photoinduced Mott transition is a manifestation of the spin-charge coupling in the intensely photoexcited states.
We theoretically investigate the effect of static disorder on the dynamics of photoexcited states in one-dimensional Mott insulators. We numerically calculate the time development of the state excited by a light pulse in the Pariser-Parr-Pople model, where disorder is introduced in the site energy and the transfer integral. In the weaker excitation case, the spin-charge coupling is induced by the disorder in the transfer integral. The effects of the disorder in the site energy on the spin-charge coupling are much weaker than those in the transfer integral. In the stronger excitation case, the spin and the charge degrees of freedom are coupled in the photoexcited states even in regular systems. The spin relaxations are enhanced by the disorders, and there are no significant differences in the effects of disorders on the spin relaxations between these two kinds of disorders.
We theoretically analyze the process of charge recombination in the planar Mott-Hubbard insulators with the aim to explain the short picosecond-range lifetimes of photoexcited carriers, experimentally studied via pump-probe experiments on the undoped cuprates. The recombination mechanism consists of two essential ingredients: the formation of a metastable sss-type bound holon-doublon pair, i.e., the Mott exciton, and the decay of such an excitonic state via the multimagnon emission. In spite of the large gap that requires many bosons to be emitted, the latter process is fast due to a large exchange scale and strong charge-spin coupling in planar systems. As the starting microscopic model we consider the single-band Hubbard model and then a more realistic three-band model for cuprates, both leading to the same minimal one. The decay rate of the exciton is evaluated numerically via the Fermi golden rule, having consistency also with the direct time-evolution calculation. The decay rate reveals exponential dependence on the ratio of the Mott-Hubbard gap and the exchange coupling, the result qualitatively reproduced also within a toy exciton-boson model.
We present a calculation of the recombination rate of the excited holon-doublon pairs based on the two-dimensional model relevant for undoped cuprates, which shows that fast processes, observed in pump-probe experiments on Mott-Hubbard insulators in the picosecond range, can be explained even quantitatively with the multimagnon emission. The precondition is the existence of the Mott-Hubbard bound exciton of the s-type. We find that its decay is exponentially dependent on the Mott-Hubbard gap and on the magnon energy, with a small prefactor, which can be traced back to strong correlations and consequently large exciton-magnon coupling.