Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

680-890nm spectral range of nickel-nitrogen and nickel-silicon complex single centres in diamond

Stefania Castelletto, Andrew Mark Edmonds

Published Oct 15, 2012• 10 citations
Publisher

Abstract

Fluorescent emitters in nanodiamonds are considered to be a valuable resource for emerging fields such as quantum communication, quantum photonics and biological imaging. In this paper we report a wide range of narrow bandwidth spectral emission lines arising from different color centers at room temperature. We associate the zero phonon lines, observed using confocal microscopy, with previously identified nickel-related centers in high pressure high temperature diamond, with a Si/Ni complex and silicon vacancy defects. In particular we show the first observation of a 850 nm emission in diamond with single photon signature, indicating the potential for diamond to harbor infrared single-photon sources. Index Terms diamond defects, single-photon emission, confocal microscopy.

DOI
10.1117/12.958606

Related papers

Production of Multiple Diamond-Based Single-Photon Sources

Stefania Castelletto, Andrew Mark Edmonds, T. Gaebel +1 more

Fluorescent emitters in diamond are considered to be a valuable resource for fields such as quantum communication, quantum photonics, and biological imaging. In this paper, we report a wide range of narrow bandwidth ( ~ 1.5 nm) spectral emission lines arising from different color centers at room temperature. The defects were created by chemical vapor deposition of thin diamond films grown on silica substrates seeded with nanoparticles of diamond and nickel. These fluorescent lines also possess single or few centers photon statistics. We correlate the zero-phonon lines, observed using confocal microscopy, with previously identified nickel-related centers which have been observed in high-pressure high-temperature diamond, with a Si/Ni complex and silicon vacancy defects. We compare our findings with recent results demonstrating single-photon emission in diamond associated with nickel-related centers to clarify and summarize previous studies concerning this specific dopant. The great variety of emission lines observed in the synthesized material, mainly associated with nickel-related centers, could be an important resource for applications relying on the presence of several emitters of single photons in the same sample. Moreover, the possibility of mass production of these centers in nanodiamonds in colloidal suspension may provide an important resource for biomarking and microscopy.

IEEE Journal of Selected Topics in Quantum Electronics•Aug 29, 2012•22 citations

Single-photon emission from Ni-related color centers in CVD diamond

David Steinmetz, Elke Neu, Christian Hepp +5 more

Color centers in diamond are very promising candidates among the possible realizations for practical singlephoton sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows single-photon emission, but within a large, phonon-broadened spectrum (≈ 100 nm), which strongly limits its applicability for quantum communication. By contrast, Ni-related centers exhibit narrow emission lines at room temperature. We present investigations on single color centers consisting of Ni and Si created by ion implantation into single crystalline IIa diamond. We use systematic variations of ion doses between 108 cm-2 and 1014 cm-2 and energies between 30 keV and 1.8MeV. The Ni-related centers show emission in the near infrared spectral range (≈ 770 nm to 787 nm) with a small line-width (≈ 3 nm FWHM). A measurement of the intensity correlation function proves single-photon emission. Saturation measurements yield a rather high saturation count rate of 77.9kcounts/s. Polarization dependent measurements indicate the presence of two orthogonal dipoles.

arXiv:1003.3388•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Apr 30, 2010•7 citations

Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds

Sarah Lindner, Alexander Bommer, Andreas Muzha +7 more

The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730–742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn–Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.

arXiv:1807.03842•New Journal of Physics•Oct 18, 2018•82 citations

Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications

Stepan V. Bolshedvorskii, Anton I. Zeleneev, Vadim V. Vorobyov +13 more

Ultrasmall (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically active, single silicon-vacancy color center. Using special sample preparation technique, we were able to prepare samples containing single nanodiamonds on the surface. By correlating atomic-force microscope images and confocal optical images, we verified the presence of optically active color centers in single nanocrystals, and using second-order correlation measurements, we proved the single-photon emission statistics of these nanodiamonds. These color centers have nonblinking, spectrally narrow emission with narrow distribution of spectral width and positions of zero-phonon line, thus proving the high quality of the nanodiamonds produced.

arXiv:1812.06534•ACS Applied Nano Materials•Jul 8, 2019•36 citations

Enhanced single-photon emission in the near infrared from a diamond color center

Igor Aharonovich, Chunyuan Zhou, Alastair D. Stacey +7 more

Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of an as-yet uncharacterized nickel-related complex in diamond which has photophysical properties surpassing the two main-stay centers for single-photon applications, namely, the nitrogen-vacancy and the nickel-nitrogen complex (NE8) center. This center was fabricated using focused ion-beam implantation of nickel into isolated chemical vapor-deposited diamond crystals. A possible correlation of the center to a Ni/Si complex is substantiated by a coimplantation of Ni and Si into a pure bulk diamond. Room-temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns.

Physical Review B•Jun 15, 2009•83 citations

Stable single-photon source in the near infrared

T. Gaebel, I. Popa, A Gruber +3 more

Owing to their unsurpassed photostability, defects in solids may be ideal candidates for single-photon sources. Here we report on generation of single photons by optical excitation of a yet unexplored defect in diamond, the nickel–nitrogen complex (NE8) centre. The most striking feature of the defect is its emission bandwidth of 1.2 nm at room temperature. The emission wavelength of the defect is around 800 nm, which is suitable for telecom fibres. In addition, in this spectral region little background light from the diamond bulk material is detected. Consequently, a high contrast in antibunching measurements is achieved.

arXiv:quant-ph/0402213•New Journal of Physics•Jul 29, 2004•242 citations
Fluorescent emitters in nanodiamonds are considered to be a valuable resource for emerging fields such as quantum communication, quantum photonics and biological imaging. In this paper we report a wide range of narrow bandwidth spectral emission lines arising from different color centers at room temperature. We associate the zero phonon lines, observed using confocal microscopy, with previously identified nickel-related centers in high pressure high temperature diamond, with a Si/Ni complex and silicon vacancy defects. In particular we show the first observation of a 850 nm emission in diamond with single photon signature, indicating the potential for diamond to harbor infrared single-photon sources. Index Terms diamond defects, single-photon emission, confocal microscopy.
Fluorescent emitters in diamond are considered to be a valuable resource for fields such as quantum communication, quantum photonics, and biological imaging. In this paper, we report a wide range of narrow bandwidth ( ~ 1.5 nm) spectral emission lines arising from different color centers at room temperature. The defects were created by chemical vapor deposition of thin diamond films grown on silica substrates seeded with nanoparticles of diamond and nickel. These fluorescent lines also possess single or few centers photon statistics. We correlate the zero-phonon lines, observed using confocal microscopy, with previously identified nickel-related centers which have been observed in high-pressure high-temperature diamond, with a Si/Ni complex and silicon vacancy defects. We compare our findings with recent results demonstrating single-photon emission in diamond associated with nickel-related centers to clarify and summarize previous studies concerning this specific dopant. The great variety of emission lines observed in the synthesized material, mainly associated with nickel-related centers, could be an important resource for applications relying on the presence of several emitters of single photons in the same sample. Moreover, the possibility of mass production of these centers in nanodiamonds in colloidal suspension may provide an important resource for biomarking and microscopy.
Color centers in diamond are very promising candidates among the possible realizations for practical singlephoton sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows single-photon emission, but within a large, phonon-broadened spectrum (≈ 100 nm), which strongly limits its applicability for quantum communication. By contrast, Ni-related centers exhibit narrow emission lines at room temperature. We present investigations on single color centers consisting of Ni and Si created by ion implantation into single crystalline IIa diamond. We use systematic variations of ion doses between 108 cm-2 and 1014 cm-2 and energies between 30 keV and 1.8MeV. The Ni-related centers show emission in the near infrared spectral range (≈ 770 nm to 787 nm) with a small line-width (≈ 3 nm FWHM). A measurement of the intensity correlation function proves single-photon emission. Saturation measurements yield a rather high saturation count rate of 77.9kcounts/s. Polarization dependent measurements indicate the presence of two orthogonal dipoles.
The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730–742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn–Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.
Ultrasmall (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically active, single silicon-vacancy color center. Using special sample preparation technique, we were able to prepare samples containing single nanodiamonds on the surface. By correlating atomic-force microscope images and confocal optical images, we verified the presence of optically active color centers in single nanocrystals, and using second-order correlation measurements, we proved the single-photon emission statistics of these nanodiamonds. These color centers have nonblinking, spectrally narrow emission with narrow distribution of spectral width and positions of zero-phonon line, thus proving the high quality of the nanodiamonds produced.
Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of an as-yet uncharacterized nickel-related complex in diamond which has photophysical properties surpassing the two main-stay centers for single-photon applications, namely, the nitrogen-vacancy and the nickel-nitrogen complex (NE8) center. This center was fabricated using focused ion-beam implantation of nickel into isolated chemical vapor-deposited diamond crystals. A possible correlation of the center to a Ni/Si complex is substantiated by a coimplantation of Ni and Si into a pure bulk diamond. Room-temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns.
Owing to their unsurpassed photostability, defects in solids may be ideal candidates for single-photon sources. Here we report on generation of single photons by optical excitation of a yet unexplored defect in diamond, the nickel–nitrogen complex (NE8) centre. The most striking feature of the defect is its emission bandwidth of 1.2 nm at room temperature. The emission wavelength of the defect is around 800 nm, which is suitable for telecom fibres. In addition, in this spectral region little background light from the diamond bulk material is detected. Consequently, a high contrast in antibunching measurements is achieved.