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Modern Physics Letters B

DISORDER AND SUPERCONDUCTIVITY IN CONNECTION WITH HIGH T c : AN OVERVIEW

Cristina Wiecko

Published Aug 20, 1992• 1 citation
Publisher

Abstract

There is a growing interest in the interplay between disorder and superconductivity in high T c phenomenon. After a short review of the field we discuss the work done both on the Anderson-Hubbard model, (semianalytically and numerically) and in the model which describes both extended and localized excitations. Enhancement of the superconducting pairing with disorder appears in some of the approaches.

DOI
10.1142/s0217984992002040

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There is a growing interest in the interplay between disorder and superconductivity in high T c phenomenon. After a short review of the field we discuss the work done both on the Anderson-Hubbard model, (semianalytically and numerically) and in the model which describes both extended and localized excitations. Enhancement of the superconducting pairing with disorder appears in some of the approaches.
We have studied the influence of singular fluctuations around the mean-field solution as well as higher order contributions to the geometry controlled asymptotic expansion of the propagators on η-pairing superconductivity in the strong coupling negative-U Hubbard model in the presence of unpaired electrons. The modifications of the mean-field results due to the introduction of disorder and allowance for finite U are also calculated. Besides the singularities already present in the O(2) nonlinear σ-model we find a filling-depending singular depression of the repulsive effective pair-hopping interaction which strongly alters the mean-field phase diagram and appears to suppress the η-pairing phase near the band edges.
We investigate the effects of Coulomb disorder on the half-filled ionic Hubbard model within the framework of dynamical mean-field theory (DMFT), using the equation-of-motion method as the impurity solver, combined with typical medium theory (TMT). In contrast to conventional disordered Hubbard models, the ionic Hubbard model contains a staggered ionic potential that introduces additional competition between band-insulating and correlation-driven insulating tendencies. We analyze how this ionic potential modifies the electronic phases induced by Coulomb disorder through the arithmetic and geometric averages of the local density of states. In the absence of disorder, the system exhibits metallic (M), Mott-insulating (MI), and band-insulating (BI) phases. When Coulomb disorder is introduced, Anderson-insulating (AI) behavior and localized states (LS) inside the Mott gap are also observed. In particular, the LS regime appears between the metallic and Mott-insulating phases at small ionic potentials, whereas the AI regime develops for sufficiently large values of the Coulomb interaction and ionic potential. Our results show that the interplay between ionic potential, electron correlation, and disorder substantially influences the localization behavior and insulating characteristics of the ionic Hubbard model.