Physical review. B, Condensed matter
Temperature and concentration dependence of optical dephasing, spectral-hole lifetime, and anisotropic absorption in Eu 3 + : Y 2 SiO 5
Flurin Könz, Y. Sun, Charles W. Thiel, R. L. Cone, Randy W. Equall, Ralph L. Hutcheson, R. M. Macfarlane
Abstract
Detailed site-selective spectroscopy has been performed as a function of temperature on the ${}^{7}{F}_{0}{\ensuremath{\leftrightarrow}}^{5}{D}_{0}$ transition of ${\mathrm{Eu}}^{3+}:{\mathrm{Y}}_{2}{\mathrm{SiO}}_{5}$ for ${\mathrm{Eu}}^{3+}$ concentrations of 0.02%, 0.1%, 0.5%, and 1%. Time-domain optical dephasing, spectral hole lifetimes, anisotropic absorption coefficients, inhomogeneous linewidths, and fluorescence lifetimes for ${\mathrm{Eu}}^{3+}$ ions at both crystallographic sites were measured. The temperature dependence of the optical dephasing, transition energy, and linewidth of the ${}^{7}{\stackrel{\ensuremath{\rightarrow}}{{F}_{0}}}^{5}{D}_{0}$ absorption was measured and interpreted in terms of Raman scattering of phonons. Photon echo measurements of optical dephasing gave ${T}_{2}$ values as long as 2.6 ms, approaching the limit set by the fluorescence decay time. Spectral hole lifetimes were measured for temperatures from 2 K to 18 K, with observed lifetimes varying from 1 s at 18 K to an estimated value of greater than 20 days at 2 K. Anisotropic absorption coefficients were measured, and an increase in ${\mathrm{Eu}}^{3+}$ concentration from 0.02% to 7% produced an increase in the inhomogeneous linewidth ${\ensuremath{\Gamma}}_{\mathrm{inh}}$ from 0.5 GHz to \ensuremath{\sim}150 GHz, indicating that ${\mathrm{Eu}}^{3+}$ doping induces significant strain in the crystal. New determinations of many energy levels of ${}^{7}{F}_{J}$ multiplets have been made for $J=0$ to 6.