Two-Color Spectroscopy of Energy Transfers in Si:Er

Investigation of Population Dynamics in 1.54-μm Telecom Transitions of Epitaxial (ErxSc1-x)2O3 Thin Layers for Coherent Population Manipulation: Weak Excitation Regime

S. Adachi, Yoshihiro Kawakami, Reina Kaji +2 more

Applied SciencesMay 25, 20183 citations

Two-Color Spectroscopy of Energy Transfers in Si:Er

M. Forcales

Published Jan 1, 2004• 0 citations

OpenAlex

Related papers

Excitation of Si:Er with sub-band-gap energies

M.A.J. Klik, T. Gregorkiewicz

Physica B Condensed MatterDec 1, 20011 citation

Energy transfer between shallow centers and rare-earth ion cores: Er3+ ion in silicon

T. Gregorkiewicz, Du Thi Xuan Thao, Jerzy M. Langer +4 more

Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samples of different parameters. It is observed that the excitation energy provided by a laser operating in the visible can be temporarily stored by trapping photogenerated carriers at shallow centers available in the material. Subsequently, this energy can be transferred to the $4f$ -electron core of the ${\mathrm{Er}}^{3+}$ ion in a trap ionization process induced by a mid-infrared pulse from a free-electron laser. In that way, Er-related luminescence at $1.5 \ensuremath{\mu}\mathrm{m}$ can be generated by an infrared pulse applied within several milliseconds after the band-to-band excitation pulse. By scanning the wavelength of the free-electron laser, ionization spectra of the shallow centers participating in the energy transfer are obtained, allowing for their identification. On that basis, the involvement of thermal donors is suggested. The results demonstrate that excitation of Er ions in Si is a multichannel energy transfer process where shallow centers play an important role.Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samples of different parameters. It is observed that the excitation energy provided by a laser operating in the visible can be temporarily stored by trapping photogenerated carriers at shallow centers available in the material. Subsequently, this energy can be transferred to the $4f$-electron core of the ${\mathrm{Er}}^{3+}$ ion in a trap ionization process induced by a mid-infrared pulse from a free-electron laser. In that way, Er-related luminescence at $1.5 \ensuremath{\mu}\mathrm{m}$ can be generated by an infrared pulse applied within several milliseconds after the band-to-band excitation pulse. By scanning the wavelength of the free-electron laser, ionization spectra of the shallow centers participating in the energy transfer are obtained, allowing for their identification. On that basis, the involvement of thermal donors is suggested. The results demonstrate that excitation of Er ions in Si is a multichannel energy transfer process where shallow centers play an important role.

Physical review. B, Condensed matterFeb 15, 200040 citations

Two-dimensional electronic spectroscopy

John D. Hybl, Allison W. Albrecht, Sarah M. Gallagher Faeder +1 more

Chemical Physics LettersNov 1, 1998436 citations

Optically Induced Deexcitation of Rare-Earth Ions in a Semiconductor Matrix

M.A.J. Klik, T. Gregorkiewicz, Ian V. Bradley +1 more

We report on verification of the proposed energy transfer mechanism responsible for photoluminescence of rare earth (RE) ions in semiconductors. Using two-color spectroscopy in the visible and the midinfrared regions (with a free-electron laser) we demonstrate reversal of the most important step in the excitation process. In that way, formation of the intermediate state bridging atomic states of the RE ion core and extended orbitals of a semiconducting host is explicitly confirmed and its characteristic energy spectroscopically determined. The study is performed for InP:Yb. It is argued, however, that the conclusions are valid for all semiconductor:RE systems, including the notorious Si:Er.We report on verification of the proposed energy transfer mechanism responsible for photoluminescence of rare earth (RE) ions in semiconductors. Using two-color spectroscopy in the visible and the midinfrared regions (with a free-electron laser) we demonstrate reversal of the most important step in the excitation process. In that way, formation of the intermediate state bridging atomic states of the RE ion core and extended orbitals of a semiconducting host is explicitly confirmed and its characteristic energy spectroscopically determined. The study is performed for InP:Yb. It is argued, however, that the conclusions are valid for all semiconductor:RE systems, including the notorious Si:Er.

Physical Review LettersNov 7, 200277 citations

Optical Spectroscopy of an Erbium-Doped Crystal

Optische Spektroskopie

Jan 1, 20130 citations

Investigation of Population Dynamics in 1.54-μm Telecom Transitions of Epitaxial (ErxSc1-x)2O3 Thin Layers for Coherent Population Manipulation: Weak Excitation Regime

S. Adachi, Yoshihiro Kawakami, Reina Kaji +2 more

We have investigated the energy transfers in the 1.54- μ m region of (Er,Sc) 2 O 3 epitaxial thin films grown on Si(111). The interplay of the energy transfers between Er ions in the different and the same symmetry sites makes the dynamics complicated. To suppress the energy transfer upconversion, low power and resonant excitation of the third crystal-field level ( 4 I 13 / 2 : Y 3 ′ ) of the Er 3 + site with C 3 i symmetry was employed. The time-resolved photoluminescence measurements of the Y 1 ′ - Z 1 ′ transition indicate the existence of two decay components having fast (10–100 μ s) and slow (0.1–1 ms) relaxation times in the range of 4–60 K. The model calculation including the inter-site energy transfers, the temperature-sensitive and -insensitive non-radiative relaxations fits the experimental results well. Moreover, the long averaged inter-Er 3 + distance obtained by decreasing Er concentration was found to reduce two kinds of non-radiative relaxation rates and the energy transfer rates between Er ions very effectively.We have investigated the energy transfers in the 1.54- μ m region of (Er,Sc) 2 O 3 epitaxial thin films grown on Si(111). The interplay of the energy transfers between Er ions in the different and the same symmetry sites makes the dynamics complicated. To suppress the energy transfer upconversion, low power and resonant excitation of the third crystal-field level ( 4 I 13 / 2 : Y 3 ′ ) of the Er 3 + site with C 3 i symmetry was employed. The time-resolved photoluminescence measurements of the Y 1 ′ - Z 1 ′ transition indicate the existence of two decay components having fast (10–100 μ s) and slow (0.1–1 ms) relaxation times in the range of 4–60 K. The model calculation including the inter-site energy transfers, the temperature-sensitive and -insensitive non-radiative relaxations fits the experimental results well. Moreover, the long averaged inter-Er 3 + distance obtained by decreasing Er concentration was found to reduce two kinds of non-radiative relaxation rates and the energy transfer rates between Er ions very effectively.

Applied SciencesMay 25, 20183 citations

4f

-electron core of the

{\mathrm{Er}}^{3+}

ion in a trap ionization process induced by a mid-infrared pulse from a free-electron laser. In that way, Er-related luminescence at $1.5 \ensuremath{\mu}\mathrm{m}$ can be generated by an infrared pulse applied within several milliseconds after the band-to-band excitation pulse. By scanning the wavelength of the free-electron laser, ionization spectra of the shallow centers participating in the energy transfer are obtained, allowing for their identification. On that basis, the involvement of thermal donors is suggested. The results demonstrate that excitation of Er ions in Si is a multichannel energy transfer process where shallow centers play an important role.