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Elsevier eBooks

Few Electron Quantum Computing Structures and Lattice Gas Computation

Brosl Hasslacher

Published Jan 1, 1992• 0 citations
Publisher
DOI
10.1016/b978-0-12-409660-8.50055-9

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The purpose of this project was to develop quantum computing hardware suitable for implementing quantum lattice-gas algorithms, with eventual application to turbulent flow simulations. A number of quantum systems were investigated, including rare-earth dopants in oxide crystals and in II-VI semiconductors. However, in the option year it was decided to concentrate exclusively on nitrogen-vacancy (NV) color centers in diamond. Surprising, it was found that NV diamond exhibited the key elements needed to develop few-qubit room-temperature solid-state quantum processing nodes. This included the ability to optically initialize and readout the NV electron spin state, fractional millisecond lifetimes for electron spins, and few-nanosecond electron spin Rabi flops. We also demonstrated the relatively long distance (few nanometer) coupling of a single NV spin to the electron spin of a single substitutional nitrogen (N). To achieve long range optical interconnections and entanglement between nodes, cryogenic cooling will likely still be required to sufficiently narrow the optical absorption lines. To this end we located diamond samples with unusually high purity, and found NV centers in these crystals that exhibited exceptionally narrowband and stable optical lines. We also demonstrated electric field tuning of the optical transition frequency as required for controlling atom-atom and atom-cavity coupling.
We consider 2d gas of spinless fermions with the Coulomb interaction on a lattice at T=0 and at different values of the hopping amplitude J. At small J electrons form a periodic structure. At filling factor ν=1/6 this structure melts at J as low as 0.02--0.03 in units of the nearest-neighbor Coulomb energy. We argue that this transition is connected to the dielectric-metal and dielectric-superconductor transitions. To demonstrate this point we perform computer modeling of the systems 6x6 with 6 and 7 electrons and 6x12 with 12 electrons. By sweeping J we compute simultaneously persistent current and structural characteristics of the electron distribution.