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Quantum Electronics and Laser Science Conference

Coherent excitonic gain under resonant excitation in semiconductor quantum wells

Mark C. Phillips, Hailin Wang

Published Nov 13, 2002• 0 citations
Publisher

Abstract

Summary form only given. Strong resonant excitation of atoms can lead to Mollow spectra in saturation spectroscopy, with gain near the Rabi sidebands or with a coherent dip at the atomic resonance. In this paper we report experimental studies on the manifestation of Mollow spectra and especially gain in an excitonic system. We observe a spectrally sharp coherent excitonic gain in a semiconductor quantum well under strong resonant excitation. Theoretical analysis based on modified optical Bloch equations (MOBE) indicates that this coherent gain differs qualitatively from its counterpart in atomic systems and is a direct result of exciton-exciton interactions. Understanding the manifestation of Mollow spectra and gain in an excitonic system provides important insight into coherent optical interactions in semiconductors and is of importance in understanding recently observed parametric gain associated with exciton-polaritons in semiconductor microcavities.

DOI
10.1109/qels.2001.962217

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A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.
We report on the optical response of a semiconductor microcavity featuring a strong exciton–photon coupling. The weak excitation regime is investigated experimentally by means of time-resolved transmission and four-wave mixing experiments. The influence of electronic disorder on the coherent exciton–photon dynamics is discussed in terms of the solutions of the Maxwell-Bloch equations. The high excitation regime is investigated by using transient sub-picosecond pump–probe experiments. Optical amplification of the probe beam (up to a factor of five), as well as a fundamental change of the optical spectra, have been found close to and above the exciton saturation density. The observed oscillations are corresponding to the Rabi frequency of the excitons in the pump field.
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Exciton-biexciton coherent coupling effects are examined in semiconductor quantum dots. The exciton absorption spectrum is measured with the microphotoluminescence excitation technique in a single InGaAs quantum dot. The spectrum changes from a Lorenztian-type line shape to an unusual dip-shaped line shape with increasing excitation intensities in a higher exciton state where there is a large oscillator strength between the exciton and biexciton states. The intensity dependence of the dip energy width clearly indicates that coherent Rabi oscillation occurs between the exciton and biexciton states. The absorption properties with excitation light of different polarizations show that the dip-shaped spectra only appear when there is a large biexciton state population with linear polarization. A theoretical analysis undertaken with the density matrix method agrees well with experimental results. This agreement reveals that exciton-biexciton coherent interactions lead to unusual absorption spectra and contribute crucially to the optical properties of quantum dots. The exciton-biexciton coherent effects provide a scheme for controlling four distinguishable states, which can be applied to a demonstration of quantum gate operations.