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Quantum Electronics and Laser Science Conference

Coherent coupling between continuum states and excitons in semiconductors due to excitation-induced-dephasing

Justin M. Shacklette, Steven T. Cundiff, W. Stolz

Published Jan 20, 2003• 0 citations
Publisher

Abstract

Summary form only given. Our experimental data shows that excitation induced dephasing (EID) is the coupling mechanism between continuum states and the exciton. The fact that both the transient four wave mixing (TFWM) and PND-TFWM experiments have the same dependence on pre-pulse power demonstrates that the coherent emission of the exciton is dominated by EID mediated coupling to the continuum for broadband excitation.

DOI
10.1109/qels.1999.807093

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We present an experimental and theoretical investigation of ultrafast transient four-wave mixing of GaAs/ ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum wells for coherent excitation of exciton and continuum states. The signal appears at the exciton resonance and is shown to consist of two contributions: an intense spectrally narrow part only present for short time delays and a weak exponentially decaying part reflecting the intrinsic coherence properties of the exciton states. The intense part of the signal is due to the excitation of the continuum states mediated by interaction-induced nonlinearities. \textcopyright{} 1996 The American Physical Society.

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Summary form only given. Our experimental data shows that excitation induced dephasing (EID) is the coupling mechanism between continuum states and the exciton. The fact that both the transient four wave mixing (TFWM) and PND-TFWM experiments have the same dependence on pre-pulse power demonstrates that the coherent emission of the exciton is dominated by EID mediated coupling to the continuum for broadband excitation.
Summary form only given. Despite recent effort, there are aspects of the transient four-wave-mixing (TFWM) response of semiconductors that remain puzzling. By performing partially nondegenerate TFWM (PND-TFWM) we show that for broadband excitation, the signal emitted at the 1 s exciton is dominated by contributions that correspond to excitation of higher states by the first pulse. The interference of these contributions results in the rapid decay of the excitonic signal. Our results demonstrate that, because TFWM is inherently a many-particle phenomenon, the many-body interactions always couple the excitonic transitions.
We have studied the coherent emission from bulk semiconductors by spectrally resolved and spectrally integrated four-wave mixing (FWM) with broadband 16-fs pulses in the carrier density range from $1\ifmmode\times\else\texttimes\fi{}{10}^{16}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$ to $6\ifmmode\times\else\texttimes\fi{}{10}^{17}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}.$ In GaAs, only continuum transitions are excited, while both excitonic and continuum transitions are excited in Al0.06Ga0.94As.{\mathrm{Al}}_{0.06}{\mathrm{Ga}}_{0.94}\mathrm{As}.Al0.06​Ga0.94​As. The decay of the FWM signal for positive time delays unambiguously reflects the dephasing of the continuum, irrespective of the excitation of excitonic transitions. We find identical ultrafast sub-20-fs decay times of the coherent emission from continuum transitions in GaAs and Al0.06Ga0.94As,{\mathrm{Al}}_{0.06}{\mathrm{Ga}}_{0.94}\mathrm{As},Al0.06​Ga0.94​As, independent of the excess excitation energy. These decay times depend only weakly on the carrier density for densities below ${10}^{17}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}.$ The continuum dephasing is analyzed considering carrier-carrier and carrier-LO-phonon scattering in a relaxation rate approach. The excitonic transitions in Al0.06Ga0.94As{\mathrm{Al}}_{0.06}{\mathrm{Ga}}_{0.94}\mathrm{As}Al0.06​Ga0.94​As dominate the FWM signal at negative time delays.
Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor.
Summary form only given.The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms are found to be important. First, the excitation-induced dephasing FWM signal (EID), which leads to a strong dependence of the signal on the angle between the linear input polarizations. The presence of the EID in the mainly homogeneously broadened sample (25 nm) is shown by the beating between EID and two-photon coherence (TPC) at the exciton for negative delay and co-linear polarized excitation. It vanishes for cross-polarized excitation, thus excluding the importance of local-field effects.
Summary form only given. Optical interactions in semiconductor microcavities embedded with quantum wells enter a nonperturbative regime when the dipole coupling rate between the exciton and the cavity mode exceeds relevant decay rates. In this regime, coherent energy exchange between the exciton and the cavity mode, i.e. normal mode oscillation (NMO), takes place when the cavity mode is excited impulsively by a short laser pulse. Similar coherent oscillations have also been observed in transient four-wave mixing (FWM) responses. In this paper, we present experimental and theoretical studies on the nature of oscillations in these transient FWM responses. We show that, in contrast to earlier beliefs, oscillations in time-integrated transient FWM do not correspond to NMO of the exciton or photon populations. Theoretical studies further reveal that FWM arising from different physical mechanisms including band filling, excitation-induced dephasing, and renormalized electric fields is characterized by highly distinct coherent dynamics. Oscillations in transient FWM reflect interference between these coherent optical processes and can be used as a unique probe for exciton many-body interactions in the nonperturbative regime.
We present an experimental and theoretical investigation of ultrafast transient four-wave mixing of GaAs/ Alx{\mathrm{Al}}_{\mathit{x}}Alx​${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum wells for coherent excitation of exciton and continuum states. The signal appears at the exciton resonance and is shown to consist of two contributions: an intense spectrally narrow part only present for short time delays and a weak exponentially decaying part reflecting the intrinsic coherence properties of the exciton states. The intense part of the signal is due to the excitation of the continuum states mediated by interaction-induced nonlinearities. \textcopyright{} 1996 The American Physical Society.