Random lasing in disordered semiconductor medium with four-level two-electron atomic system

Yong Liu, Jinsong Liu, Kejia Wang

Terahertz (THz) random lasing is studied numerically for two-dimensional disordered media made of ruby grains with a three-level atomic system. A method via the adjustment of the pumping area to control the polarization of the THz wave is proposed. Computed results reveal that transverse electric THz lasing modes could occur if pumping is supplied on the whole medium, while transverse magnetic THz lasing modes could occur if pumping is appropriately supplied on a partial area of the medium.

Л. С. Гайда, Iosif S. Zeilikovich, S. A. Pulkin +1 more

Yong Liu, Jinsong Liu, Kejia Wang

By numerically solving Maxwell’s equations and rate equations in a two-dimensional (2D) active random media made of ruby grains with a three-level atomic system, the threshold gain behavior for a THz random laser is investigated. The spectral intensity variation with the pumping rate is calculated for both the transverse magnetic (TM) field and the transverse electric (TE) field. The computed results show that THz random lasing could occur in a 2D disordered medium for both the TM and TE cases. Further analysis reveals that the THz lasing threshold for TM fields is lower than that for TE fields.

Hamid Reza Hamedi, Gediminas Juzeliūnas, Ali Raheli +1 more

Jin Liu

By numerically solving Maxwell’s equations and rate equations in a two-dimensional (2D) active random media made of ruby grains with a three-level atomic system, the threshold gain behavior for a THz random laser is investigated. The spectral intensity variation with the pumping rate is calculated for both the transverse magnetic (TM) field and the transverse electric (TE) field. The computed results show that THz random lasing could occur in a 2D disordered medium for both the TM and TE cases. Further analysis reveals that the THz lasing threshold for TM fields is lower than that for TE fields.

Yingmao Xie, Zhengdong Liu